GJ5706 [GTM]
NPN EPITAXIAL PLANAR SILICON TRANSISTOR; NPN外延平面硅晶体管
| 型号： | GJ5706 |
| 厂家： | 
GTM CORPORATION |
| 描述： | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：931K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISSUED DATE :2005/05/06
REVISED DATE :
GTM
CORPORATION
GJ5706
The GJ5706 is designed high current switching applications.
N P N E P I T A X I A L P L A N A R S I L I C O N T R A N S I S T O R
Description
Features
*Large current capacitance
*Low collector-to-emitter saturation voltage
*High-speed switching
*High allowable power dissipation
Package Dimensions
TO-252
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Min.
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
0.50
2.20
0.45
0
2.30 REF.
0.90
5.40
0.80
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Ratings
Unit
V
V
V
V
V
V
V
V
CBO
CES
CEO
EBO
80
80
50
6
5
I
C
A
Collector Current(Pulse)
Base Current
Junction Temperature
Storage Temperature
I
CP
7.5
1.2
+150
-55 ~ +150
0.8
A
A
к
к
W
W
I
B
Tj
TsTG
P
C
D
Total Power Dissipation
PD
(T
=25к)
15
Electrical Characteristics (Rating at Ta=25к)
Symbol
BVCBO
Min.
Typ.
Max.
Unit
V
V
V
V
uA
uA
mV
mV
V
Test Conditions
80
-
-
I
I
I
I
V
V
C
C
C
=10uA, IE=0
=100uA, RBE=0
=1mA, RBE=∞
BVCES
BVCEO
BVEBO
80
50
6
-
-
-
-
-
-
E
=10uA, I
CB=40V, I
EB=4V, I =0
C
=0
I
I
CBO
-
-
-
-
-
-
-
-
-
-
1
1
135
240
1.2
560
E=0
EBO
C
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE
l
l
l
C
C
C
=1A, I
=2A, I
=2A, I
CE=2V, I
CE=10V, I
CB=10V, f=1MHz
B
B
B
=50mA
=100mA
=100mA
-
200
V
V
V
C
=500mA
C=500mA
fT
Cob
ton (Turn-On Time)
tstg (Storage Time)
tf (Fall Time)
-
-
-
-
-
400
15
35
300
20
-
-
-
-
-
MHz
pF
ns
ns
ns
See specified test circuit.
See specified test circuit.
See specified test circuit.
GJ5706
Page: 1/3
ISSUED DATE :2005/05/06
REVISED DATE :
GTM
CORPORATION
Switching Time Test Circuit
Characteristics Curve
GJ5706
Page: 2/3
ISSUED DATE :2005/05/06
REVISED DATE :
GTM
CORPORATION
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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GJ5706
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