GJ55N03 [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | GJ55N03 |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2006/08/16
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
25V
6mꢀ
55A
GJ55N03
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GJ55N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
TO-252
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
25
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
55
A
C
=100к
35
A
215
A
Total Power Dissipation
C
62.5
0.5
W
Linear Derating Factor
W/к
mJ
A
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAS
240
31
Tj, Tstg
-55 ~ +150
к
Thermal Data
Parameter
Symbol
Rthj-c
Value
2.0
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
GJ55N03
Page: 1/4
ISSUED DATE :2006/08/16
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
25
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
1.0
-
0.037
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=28A
VGS= ±20V
3.0
VGS(th)
gfs
Forward Transconductance
30
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
-
±100
nA
uA
uA
IGSS
-
-
1
25
6
9
-
VDS=25V, VGS=0
VDS=20V, VGS=0
VGS=10V, ID=30A
VGS=4.5V, ID=30A
IDSS
Drain-Source Leakage Current(Tj=150к)
-
-
-
4.5
7
Static Drain-Source On-Resistance3
mꢀ
RDS(ON)
-
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
-
16.8
6.0
4.9
15.1
4
Qg
Qgs
Qgd
Td(on)
Tr
ID=28A
nC
-
-
VDS=20V
VGS=5V
-
-
-
-
VDS=15V
ID=28A
-
-
ns
VGS=10V
Turn-off Delay Time
Fall Time
-
45.2
7.6
2326
331
174
-
Td(off)
Tf
RG=3.3ꢀ
RD=0.53ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
Ciss
Coss
Crss
VGS=0V
pF
-
-
VDS=25V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Forward On Voltage3
Symbol Min.
Typ.
Max.
1.5
Unit
V
Test Conditions
-
-
-
VSD
IS=20A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
55
A
IS
VD= VG=0V, VS=1.5V
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=20V, L=0.1mH, RG=25ꢀ, IAS=10A.
3. Pulse widthЉ300us, duty cycleЉ2%.
GJ55N03
Page: 2/4
ISSUED DATE :2006/08/16
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
9
8
7
6
5
4
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GJ55N03
Page: 3/4
ISSUED DATE :2006/08/16
REVISED DATE :
GTM
CORPORATION
28A
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ55N03
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