SSF3056C_15 [GOOD-ARK]
30V Complementary MOSFET;
| 型号： | SSF3056C_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 30V Complementary MOSFET |
| 文件： | 总5页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF3056C
30V Complementary MOSFET (Preliminary)
Main Product Characteristics
NMOS
30V
PMOS
-30V
D1
D1
D2
D2
S1
G1
S2
G2
NMOS
PMOS
VDSS
RDS(on) 37mohm(typ.) 68mohm(typ.)
ID 5A -4.5A
SchematicDiagram
DFN2X3-8L
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for buck-boost circuit, DSC, portable
devicesandgeneralpurpose applications
Ultralowon-resistancewithlowgatecharge
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others
applications.
Absolute Max Rating
Max.
Symbol
Parameter
Units
N-channel
P-channel
-4.5
ID @ TC = 25°C
5
Continuous Drain Current, VGS @ 4.5V①
Continuous Drain Current, VGS @ 4.5V①
Pulsed Drain Current②
A
ID @ TC = 100°C
4.2
18.8
2.1
30
-3.4
IDM
-12.5
1.8
PD @TC = 25°C
W
V
Power Dissipation③
VDS
VGS
Drain-Source Voltage
-30
Gate-to-Source Voltage
± 12
± 12
V
Operating Junction and Storage Temperature
Range
TJ TSTG
-55 to + 150 -55 to + 150
°C
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Page 1 of 5
Rev.1.0
SSF3056C
30V Complementary MOSFET (Preliminary)
Thermal Resistance
Max.
Symbol
Characteristics
Typ.
Units
N-channel
P-channel
—
—
60
95
Junction-to-ambient (t ≤ 10s) ④
℃/W
℃/W
RθJA
40
40
Junction-to-Ambient (PCB mounted, steady-state) ④
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
30
Typ.
—
Max.
—
Units
Conditions
VGS = 0V, ID = 250μA
TJ = 125°C
N-channel
P-channel
Drain-to-Source
27.5
-30
-27.5
—
—
—
V(BR)DSS
V
breakdown voltage
—
—
VGS = 0V, ID = -250μA
TJ = 125°C
—
—
N-channel
P-channel
N-channel
P-channel
N-channel
P-channel
N-channel
P-channel
N-channel
P-channel
N-channel
N-channel
P-channel
P-channel
37
55
85
90
115
2
VGS=4.5V,ID = 4.8A
VGS=-4.5V,ID = -2.3A
VGS=3.5V,ID = 3.8A
Static
—
68
RDS(on)
Drain-to-Source
on-resistance
mΩ
—
50
—
84
VGS=-3.5V,ID = -1.8A
0.7
0.7
-0.7
-0.7
—
1.48
1.12
-1.49
-1.26
—
VDS = VGS, ID = 250μA
TJ = 125°C
Gate threshold
voltage
2
VGS(th)
V
-2
VDS = VGS, ID = -250μA
TJ = 125°C
-2
Drain-to-Source
leakage current
1
VDS = 30V,VGS = 0V
VDS = -30V,VGS = 0V
VGS =12V
IDSS
μA
nA
—
—
-1
—
—
100
-100
100
-100
Gate-to-Source
forward leakage
—
—
VGS = -12V
IGSS
—
—
VGS =12V
—
—
VGS = -12V
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
MOSFET symb
—
—
5
Continuous Source Current
(Body Diode)
IS
A
showing the
—
—
—
—
-4.5
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
18.8
ISM
A
V
—
—
—
—
-12.5
1.2
0.82
-0.84
IS=2.4A, VGS=0V
IS=-1.5A, VGS=0V
VSD
Diode Forward Voltage
-1.2
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Page 2 of 5
Rev.1.0
SSF3056C
30V Complementary MOSFET (Preliminary)
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 5
Rev.1.0
SSF3056C
30V Complementary MOSFET (Preliminary)
Mechanical Data
DFN2X3-8L
Bottom View
Bottom View
Top View
COMMON DIMENSIONS(MM)
PKG.
REF.
A
W:VERY VERY THIN
MIN.
0.70
0.00
NOM.
0.75
MAX.
0.80
0.05
—
A1
A3
0.2 REF.
3.00
D
2.95
1.95
0.25
0.25
0.77
0.38
3.05
2.05
0.35
0.45
1.02
0.63
E
b
2.00
0.30
Side View
L
D2
E2
e
0.35
0.92
0.53
0.65 BCS.
NOTES：
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 5
Rev.1.0
SSF3056C
30V Complementary MOSFET (Preliminary)
Ordering and Marking Information
Device Marking: 3056C
Package (Available)
DFN2X3-8L
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/
Units/
Inner Boxes/ Units/
Type
Tube
Inner Box Inner Box Carton Box
Carton Box
DFN2*3-8L 3000pcs 10pcs
30000pcs
4pcs
120000pcs
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Page 5 of 5
Rev.1.0
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