SSF32E0E_15 [GOOD-ARK]
30V N-Channel MOSFET;
| 型号： | SSF32E0E_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF32E0E
30V N-Channel MOSFET
GENERAL FEATURES
● VDS =30V,ID = 0.1A
RDS(ON) < 8Ω @ VGS=4V
RDS(ON) < 13Ω @ VGS=2.5V
ESD Rating：1000V HBM
● High Power and current handing capability
● Lead free product
Schematic Diagram
● Surface Mount Package
APPLICATIONS
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
Marking and Pin Assignment
●Solid-State Relays
SOT-523 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
S32E
SSF32E0E
SOT-523
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
30
±20
0.1
V
V
VGS
ID
A
ID (70℃)
0.07
Drain Current-Continuous@ Current-Pulsed (Note 1)
0.4
0.2
A
IDM
PD
Maximum Power Dissipation
W
℃
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
400
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
V
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Page 1 of 4
Rev.1.2
SSF32E0E
30V N-Channel MOSFET
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
VDS=30V,VGS=0V
VGS=±5V,VDS=0V
VGS=±10V,VDS=0V
1
μA
nA
nA
uA
V
100
150
10
IGSS
VGS=±20V,VDS=0V
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVGSO
VDS=0V, IG=±250uA
±20
0.8
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4V, ID=0.01A
1.5
8
V
Ω
S
5
7
Drain-Source On-State Resistance
VGS=2.5V, ID=0.001A
13
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
VDS=3V,ID=0.01A
0.02
Clss
Coss
Crss
45
12
7
PF
PF
PF
VDS=5V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
VDD=5V,VGS=5V,
RGEN=10Ω，RL=500Ω
ID=0.01A
td(on)
td(off)
15
75
nS
nS
Turn-Off Delay Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=0.01A
1.3
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.2
SSF32E0E
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
ton
toff
tr
tf
td(on)
td(off)
Rl
Vin
90%
D
Vout
90%
Vgs
VOUT
INVERTED
Rgen
G
10%
90%
10%
50%
S
VIN
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.2
SSF32E0E
30V N-Channel MOSFET
SOT-523 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
Dimensions in Millimeters
Symbol
MIN.
0.700
0.000
MAX.
0.900
0.100
A
A1
A2
b1
b2
c
0.700
0.150
0.250
0.100
1.500
0.700
1.450
0.800
0.250
0.350
0.200
1.700
0.900
1.750
D
E
E1
e
0.500TYP
0.400REF
e1
0.900
1.100
L
L1
0.260
0°
0.460
8°
θ
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.2
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