SSF3338 [SILIKRON]
PWM applications; PWM应用
| 型号： | SSF3338 |
| 厂家： | 
SILIKRON SEMICONDUCTOR CO.,LTD. |
| 描述： | PWM applications |
| 文件： | 总5页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF3338
D
DESCRIPTION
The SSF3338 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 30V,ID =4A
RDS(ON) < 65mΩ @ VGS=4.5V
RDS(ON) < 47mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3338
SSF3338
SOT-23
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
V
VDS
VGS
4
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
20
A
IDM
Maximum Power Dissipation
1.25
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
130
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
30
V
VDS=30V,VGS=0V
0.5
μA
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SSF3338
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IGSS
VGS=±20V,VDS=0V
±100
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=2.8A
VGS=10V, ID=3.5A
VDS=5V,ID=2.5A
1.0
1.5
41
30
7
3.0
65
47
V
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
310
60
PF
PF
PF
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
30
td(on)
tr
td(off)
tf
7
12
15
5
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDS=15V,VGS=10V,RGEN=6Ω
ID=1A
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
6
VDS=15V,ID=2.5A,VGS=10V
VGS=0V,IS=1.25A
Gate-Source Charge
2
Gate-Drain Charge
1
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
0.8
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF3338
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
ton
tr
toff
tf
td(on)
VOUT
VIN
td(off)
Rl
Vin
D
Vout
90%
90%
10%
Vgs
Rgen
INVERTED
G
10%
50%
90%
50%
S
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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SSF3338
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
Dimensions in Millimeters
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
A
A1
A2
b
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
NOTES：
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF3338
ATTENTION:
■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
■
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
■ Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to
other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
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Silikron Semiconductor CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use
or any infringements of intellectual property rights or other rights of third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
■
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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