SSF3314E [GOOD-ARK]
30V N-Channel MOSFET;
| 型号： | SSF3314E |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF3314E
30V N-Channel MOSFET
DESCRIPTION
The SSF3314E uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its
common-drain configuration.
Schematic Diagram
GENERAL FEATURES
● VDS = 30V,ID = 8A
RDS(ON) < 39mΩ @ VGS=2.5V
RDS(ON) < 28mΩ @ VGS=3.1V
RDS(ON) < 24mΩ @ VGS=4.0V
RDS(ON) < 23mΩ @ VGS=4.5V
RDS(ON) < 18mΩ @ VGS=10V
Pin Assignment
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
DFN3×3-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
-
-
SSF3314E
SSF3314E
DFN3×3-8L
-
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VDS
±12
8
VGS
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
45
A
IDM
Maximum Power Dissipation
1.7
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
30
V
1
μA
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Page 1 of 4
Rev.1.0
SSF3314E
30V N-Channel MOSFET
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IGSS
VGS=±10V,VDS=0V
VDS=0V, IG=±250uA
10
uA
V
BVGSO
±12
0.6
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=8A
VGS=4.5V, ID=6A
VGS=4.0V, ID=4A
VGS=3.1V, ID=4A
VGS=2.5V, ID=3A
VDS=5V,ID=8A
1
1.5
18
23
24
28
39
V
mΩ
S
14
17
18
20
23
17
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
870
130
100
PF
PF
PF
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
VDS=0V,VGS=0V,
F=1.0MHz
Gate resistance
Rg
1.5
Ω
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
4
10
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=15V,VGS=10V,
RGEN=3Ω，RL=1.25Ω
Turn-Off Delay Time
28
Turn-Off Fall Time
7
Total Gate Charge
Qg
Qgs
Qgd
10.5
1.9
4.1
V
DS=15V,ID=8A,VGS=4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS=1A
0.76
0.9
4.5
V
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF3314E
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
toff
tf
Vdd
td(on)
td(off)
Rl
90%
Vin
90%
D
Vout
VOUT
INVERTED
Vgs
10%
90%
Rgen
10%
50%
G
VIN
50%
S
10%
PULSE WIDTH
Figure 1: Switching Test Circuit
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.0
SSF3314E
30V N-Channel MOSFET
DFN3×3-8L PACKAGE INFORMATION
TOP VIEW
BOTTOM VIEW
COMMON DIMENSIONS(MM)
PKG. W： VERY VERY THIN
REF.
A
MIN.
NOM.
0.75
MAX.
0.70
0.00
0.80
0.05
A1
A3
D
－
0.2REF.
3.00
2.95
2.95
0.25
0.30
2.30
2.50
3.05
3.05
0.35
0.50
2.55
1.75
E
b
3.00
0.30
L
0.40
D2
E2
2.45
1.65
SIDE VIEW
e
0.65BSC
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.0
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