SSF318W [SECOS]
N-Ch Enhancement Mode Power MOSFET;
| 型号： | SSF318W |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF318W
50V , 200mA , RDS(ON) 3.5Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Typical applications are dc–dc converters,
SOT-323
power management in portable and battery–powered
products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
A
L
3
3
Top View
C B
FEATURES
1
1
2
●
Lower Gate Charge
2
K
F
E
●
Small Package Outline
D
H
G
J
MARKING
Millimeter
Millimeter
REF.
REF.
Min.
1.80
1.80
1.15
0.80
1.20
0.20
Max.
2.20
2.45
1.35
1.10
1.40
0.40
Min.
0.100 REF.
0.525 REF.
0.08 0.25
Max.
J1
A
B
C
D
E
F
G
H
J
K
L
-
-
PACKAGE INFORMATION
0.650 TYP.
Package
SOT-323
MPQ
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Ratings
50
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
VGS
±20
V
TA=25°C
TA=25°C
I D
200
mA
mA
Pulsed Drain Current (tp ≤ 10µS)
Power Dissipation
IDM
800
P D
150
mW
Maximum Junction-to-Ambient
RθJA
556
°C / W
Maximum Lead Temperature for Soldering Purposes, for 10
seconds
TL
260
°C
°C
Operating Junction and Storage Temperature Range
TJ, TSTG
150, -55~150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Feb-2014 Rev. A
Page 1 of 4
SSF318W
50V , 200mA , RDS(ON) 3.5Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
IGSS
50
-
-
-
-
-
-
V
V
VGS=0, ID=250µA
0.5
1.5
VDS=VGS, ID=1mA
VGS=±20V
Gate-Body Leakage Current
-
-
-
±100
0.1
nA
VDS=25V, VGS=0
VDS=50V, VGS=0
Drain-Source Leakage Current
IDSS
µA
0.5
VGS=2.75V, ID<200mA,
TA=-40°C ~85°C
-
5.6
10
Drain-Source On-Resistance 1
Forward Transconductance
RDS(ON)
Ω
-
-
-
3.5
-
VGS=5V, ID=200mA
gfs
100
mS VDS=25V, ID=200mA, f=1KHz
Switch2
Turn-on Delay Time1
Turn-off Delay Time
Td(on)
Td(off)
-
-
20
20
-
-
VDD=30V,
nS
ID=200mA
Dynamic
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
-
-
-
40
12
-
-
-
VGS=0,
VDS=25V,
f=1.0MHz
pF
Reverse Transfer Capacitance
Notes:
3.5
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Feb-2014 Rev. A
Page 2 of 4
SSF318W
50V , 200mA , RDS(ON) 3.5Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Feb-2014 Rev. A
Page 3 of 4
SSF318W
50V , 200mA , RDS(ON) 3.5Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Feb-2014 Rev. A
Page 4 of 4
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