2N7002KB_15 [GOOD-ARK]
60V N-Channel MOSFET;
| 型号： | 2N7002KB_15 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002KB
60V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
60V
2Ω(max.)
0.3A
MarkingandPin
Assignment
SOT-23
SchematicDiagram
Features and Benefits
AdvancedMOSFETprocesstechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
ESDRating：1000VHBM
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
devicefor useinpower switching applicationandawidevarietyof other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
Parameter
Max.
0.3
Units
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
1.2
PD @TC = 25°C
VDS
0.63
W
V
Power Dissipation③
Drain-Source Voltage
60
VGS
Gate-to-Source Voltage
± 20
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Symbol
Characteristics
Junction-to-ambient (t ≤ 10s) ④
Typ.
Max.
Units
RθJA
—
200
℃/W
www.goodark.com
Page 1 of 6
Rev.1.0
2N7002KB
60V N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
60
—
—
1
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V, ID=0.5A
VGS=5V, ID=0.05A
VDS = VGS, ID = 250μA
VDS = 60V,VGS = 0V
VGS=±5V,VDS=0V
VGS=±20V,VDS=0V
1.5
—
2
RDS(on)
Static Drain-to-Source on-resistance
Ω
3
VGS(th)
IDSS
Gate threshold voltage
—
2.5
1
V
Drain-to-Source leakage current
—
—
—
—
—
μA
nA
uA
—
±100
±10
25
IGSS
Gate-to-Source forward leakage
—
td(on)
Turn-on delay time
—
VGS=10V, VDS=30V,
ID=0.2A,RGEN=10Ω
ns
td(off)
Ciss
Coss
Crss
Turn-Off delay time
—
—
—
—
—
40
35
—
—
—
Input capacitance
VGS = 0V
VDS = 25V
ƒ = 1MHz
pF
Output capacitance
16.6
9.5
Reverse transfer capacitance
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
0.3
A
integral reverse
p-n junction diode.
IS=0.2A, VGS=0V
Pulsed Source Current
(Body Diode)
ISM
VSD
—
—
—
—
1.2
1.3
A
V
Diode Forward Voltage
www.goodark.com
Page 2 of 6
Rev.1.0
2N7002KB
60V N-Channel MOSFET
Test circuits and Waveforms
aveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
www.goodark.com
Page 3 of 6
Rev.1.0
2N7002KB
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1. Power Dissipation Vs. Case Temperature
Figure 2.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 4 of 6
Rev.1.0
2N7002KB
60V N-Channel MOSFET
Mechanical Data
www.goodark.com
Page 5 of 6
Rev.1.0
2N7002KB
60V N-Channel MOSFET
Ordering and Marking Information
Device Marking: S72K
Package (Available)
SOT-23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tapes/Inner
Units/Inner Inner
Units/
Type
Tape
Box
Box
Boxes/Carton Carton
Box
Box
SOT-23
3000
10
30000
4
120000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
V
DSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ @ 100% of
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
Max VGSS
Bias(HTGB)
www.goodark.com
Page 6 of 6
Rev.1.0
相关型号：
©2020 ICPDF网 联系我们和版权申明