2N7002KDW [HY]
60V ESD Protected N-Channel Enhancement Mode MOSFET; 60V ESD保护的N沟道增强型MOSFET
| 型号： | 2N7002KDW |
| 厂家： | 
HY ELECTRONIC CORP. |
| 描述： | 60V ESD Protected N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002KDW
60V ESD Protected
RDS(ON), VGS@10V, IDS@500mA=2Ω
N-Channel Enhancement Mode MOSFET
RDS(ON), VGS@4.5V, IDS@200mA=3Ω
SOT-363
FEATURES
• Advanced Trench Process Technology
• Ultra Low On Resistance : 2Ω
• Fast Switching Speed : 20ns
• Low Input and Output Leakage Current
• 2KV ESD Protection
• Specially Designed for High Speed Circuit,
Battery Operated System, Drivers : Lamps,
Transistors, Relays, Memories, Display, etc..
• Compliant to EU RoHS Directive 2002/95/EC
MECHANIALDATA
• Case : SOT-363 Molded Plastic
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Marking : 702
Dimensions in inches (millimeters)
Maximum Rating and Thermal Characteristics ( TC=25OC unless otherwise noted )
Value
60
Parameter
Symbol
VDS
Units
V
Drain-Source Voltage
Gate-Source Voltage
VGS
+20
115
850
V
TC=25OC
Continuous Drain Current
ID
mA
mA
1)
Pulsed Drain Current
IDM
TC=25OC
TC=100OC
Maximum Power Dissipation
Derating Factor
0.2
0.08
PD
W
Junction to Ambient Thermal Resistance ( PCB Mounted )2)
R
625
OC/W
OC
θJA
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to +150
Note : 1. Maximum DC Current Limit by the Package
2. Surface Mounted on FR4 Board, t<5sec
COMPANYRESERVESTHERIGHTTOIMPROVEPRODUCTDESIGN,FUNCTIONSANDRELIABILITYWITHOUTNOTICE
REV1.0 : OCT. 2011
PAGE . 1
2N7002KDW
Electrical Characteristics ( TC=25OC, unless otherwise noted )
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltag e
BVDSS
VGS(th)
60
-
-
-
V
V
VGS=0V, I D=250uA
VDS=VGS, I D=250uA
Gate Threshold Voltage
0.8
2.5
-
-
1.3
1.8
2
3
Ω
Ω
VGS= 10V, I D= 500mA
VGS= 4.5V, I D= 200mA
Drain-Source On-State
Resistance
RDS(on)
Zero Gate Voltage Drain
Current
I DSS
I GSS
-
-
-
-
1
uA
VDS=60V, VGS=0V
Gate Body Leakage
Dynamic
+10
υΑ
VGS=+20V, VDS=0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Qg
-
-
-
-
-
-
-
0.6
0.16
0.24
12.8
28
0.8
0.2
0.32
20
VDS=30V, ID=200
VGS 4.5
mA
Q
nC
ns
gs
=
V
Q
gd
t
on
VDD=30V ,ID =200m
A
VGS=10V ,RG=10Ω
Turn-Off Time
t
38
off
Input Capacitance
Output Capacitance
C
36
45
iss
VDS=25V, VGS=0V
f=1.0MHZ
C
4.8
9.6
pF
oss
Reverse Transfer
Capacitance
C
-
2.4
4.2
rss
Source-Drain Diode
Max. Diode Forward Current
Max.Pulsed Source Current
Diode Forward Voltage
I S
-
-
-
-
-
300
2000
1.3
mA
mA
V
-
I SM
VSD
-
0.84
IS=200A , VGS=0V
Switching Test Circuit
Gate Charge Test Circuit
REV1.0 : OCT. 2011
PAGE . 2
RATING AND CHARACTERISTIC CURVES
2N7002KDW
Typical Characteristics Curve ( TC=25OC, unless otherwise noted )
REV1.0 : OCT. 2011
PAGE . 3
RATING AND CHARACTERISTIC CURVES
2N7002KDW
Typical Characteristics Curve ( TC=25OC, unless otherwise noted )
REV1.0 : OCT. 2011
PAGE . 4
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