2N7002KDW_14 [PANJIT]
60V N-Channel Enhancement Mode MOSFET - ESD Protected;
| 型号： | 2N7002KDW_14 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 文件： | 总6页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002KDW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Unit：inch(mm)
SOT-363
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
0.087(2.20)
0.074(1.90)
0.010(0.25)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.010(0.25)
0.003(0.08)
0.056(1.40)
0.047(1.20)
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICALDATA
• Case: SOT-363 Package
0.012(0.30)
0.005(0.15)
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.0002 ounces, 0.006 grams
• Marking : K27
6
1
5
2
4
3
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol
VDS
Limit
60
Units
V
Gate-Source Voltage
VGS
ID
+20
115
800
V
Continuous Drain Current
mA
mA
1)
Pulsed Drain Current
IDM
TA=25OC
TA=75OC
200
120
Maximum Power Dissipation
PD
TJ,TSTG
RθJA
mW
OC
Operating Junction and Storage
Temperature Range
-55 to + 150
625
Junction-to Ambient Thermal
Resistance(PCB mounted)2
OC/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 21.2010-REV.01
PAGE . 1
2N7002KDW
ELECTRICALCHARACTERISTICS
Parameter
Static
Symbol
Test Condition
Min.
Typ.
Max.
Units
Drain-Source Breakdown
Voltage
BVDSS
VGS(th)
RDS(on)
RDS(on)
IDSS
VGS=0V, ID=10uA
VDS=VGS, ID=250uA
VGS=4.5V, I D=200mA
VGS=10V, I D=500mA
VDS=60V, VGS=0V
60
-
-
-
-
-
-
-
-
2.5
4.0
3.0
1
V
V
Gate Threshold Voltage
1
Drain-Source On-State
Resistance
-
Ω
Drain-Source On-State
Resistance
-
Zero Gate Voltage Drain
Current
-
-
uA
uA
Gate Body Leakage
Forward Transconductance
Dynamic
IGSS
VGS=+20V, VDS=0V
VDS=15V, ID=250mA
+10
-
gfS
100
mS
VDS=15V, ID=200mA
VGS=4.5V
Total Gate Charge
Qg
-
-
0.8
nC
ns
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
ton
toff
-
-
-
-
-
-
-
-
-
-
20
40
35
10
5
VDD=30V , RL=150Ω
ID=200mA , VGEN=10V
RG=10Ω
Ciss
Coss
Crss
VDS=25V, VGS=0V
f=1.0MHZ
pF
Reverse Transfer
Capacitance
Source-Drain Diode
Diode Forward Voltage
VSD
Is
IS=200mA , VGS=0V
-
-
-
0.82
1.3
115
800
V
Continuous Diode Forward
Current
-
-
-
-
mA
mA
Pulsed Diode Forward
Current
IsM
V
DD
V
DD
Switching
Gate Charge
Test Circuit
Test Circuit
RL
RL
V
IN
V
GS
V
OUT
1mA
RG
RG
May 21.2010-REV.01
PAGE . 2
2N7002KDW
Typical CChhaarraacctteerriissttiiccss Curves (TA=25OC,unless otherwise noted)
1.2
1
1.2
V
DS=10V
= 10V ~ 6.0V
GS
5.0V
1
0.8
0.6
0.4
0.2
0
4.0V
0.8
0.6
0.4
0.2
0
4.0V
T
J
=25℃
3.0V
3.0V
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
FIG.1-Output
Characteristic
FIG.2- Transfer Characteristic
5
4
3
2
1
0
5
4
3
2
1
0
VGS = 4.5V
ID =500mA
ID=200mA
=10V
GS=10V
V
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
1.8
VGS =10V
ID =500mA
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
FIG.5- On Resistance vs Junction Temperature
May 21.2010-REV.01
PAGE . 3
2N7002KDW
10
8
V
DS=10V
Vgs
I
D
=250mA
Qg
6
4
2
Qsw
Vgs(th)
Qg(th)
0
0
0.2
0.4
0.6
0.8
1
Qg - Gate Charge (nC)
Qgs
Qgd
Qg
Fig.6 - Gate Charge Waveform
Fig.7 - Gate Charge
1.2
88
ID =250mA
ID = 250uA
86
84
82
80
78
76
74
72
1.1
1
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ - Junction Temperature (oC)
TJ - Junction Temperature (oC)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
10
V
GS=0V
1
25
℃
0.1
T
J
=125℃
-55℃
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
May 21.2010-REV.01
PAGE . 4
2N7002KDW
MOUNTING PAD LAYOUT
Unit：inch(mm)
SOT-363
0.018
(0.45)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGALSTATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its produ cts for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
May 21.2010-REV.01
PAGE . 5
2N7002KDW
For example :
RB500V-40_R2_00001
Serial number
Part No.
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code XX
Version Code XXXXX
2nd Code HF or RoHS 1st Code 2nd~5th Code
Packing
type
Packing
1st Code
size code
T/B
T/R
A
R
B
T
S
L
F
N/A
0
1
HF
0
1
serial number
serial number
7"
RoHS
B/P
13"
2
T/P
26mm
52mm
PBCU
PBCD
X
Y
U
D
TRR
TRL
FORMING
Part No_packing code_Version
2N7002KDW_R1_00001
2N7002KDW_R2_00001
May 21.2010-REV.01
PAGE . 6
相关型号：
©2020 ICPDF网 联系我们和版权申明