2N7002KDW-TP [MCC]
Small Signal Field-Effect Transistor,;
| 型号： | 2N7002KDW-TP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总3页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
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Micro Commercial Components
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
2N7002KDW
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$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
•
•
•
•
•
·
High density cell design for Low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
ESD protected up to 2KV
Epoxy meets UL 94 V-0 flammability rating
N-Channel
Enhancement Mode
Field Effect Transistor
·
·
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
SOT-363
Mechanical Data
G
•
•
•
•
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: 72K
C
B
A
H
Maximum Ratings
M
•
•
•
Operating Temperature: -55°C to +150°C
K
J
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 833oC/W Junction To Ambient
D
L
Parameter
Symbol
Value
Unit
DIMENSIONS
Drain-Source-Voltage
VDSS
VGS
60
V
V
INCHES
MM
DIM
A
MIN
.006
.045
.085
MAX
.014
.053
.096
MIN
0.15
1.15
2.15
MAX
0.35
1.35
2.45
NOTE
Gate-Source-Voltage
±20
B
C
D
G
H
J
.026
0.65Nominal
ID
Drain Current
340
150
mA
.047
.071
---
.055
.087
.004
.043
.018
.006
1.20
1.80
---
1.40
2.20
0.10
1.10
0.46
0.15
PD
mW
Total Power Dissipation
K
.031
.010
.003
0.80
0.26
0.08
L
M
Equivalent circuit
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Revision: C
2017/05/10
M C C
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Micro Commercial Components
2N7002KDW
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage*
VDS
VGS(th)
IDSS
VGS = 0V, ID =250µA
60
1
V
V
VDS =VGS, ID =1mA
VDS =48V,VGS = 0V
VGS =±20V, VDS = 0V
VGS = 4.5V, ID =200mA
VGS =10V,ID =500mA
VGS=0V, IS=300mA
2.5
Zero Gate Voltage Drain Current
Gate –Source leakage current
1
µA
µA
Ω
IGSS
±10
5.3
5
Drain-Source On-Resistance*
Diode Forward Voltage
Recovered charge
RDS(on)
VSD
Ω
1.5
V
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µs
Qr
30
nC
Dynamic Characteristics**
Input Capacitance
Ciss
Coss
Crss
40
30
10
pF
pF
pF
VDS =10V,VGS =0V,f =1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
td(on)
td(off)
10
15
ns
ns
VGS=10V,VDD=50V,RG=50Ω,
RGS=50Ω, RL=250Ω
Turn-Off Delay Time
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µs
Reverse recovery Time
trr
30
ns
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BVGSO
Igs=±1mA (Open Drain)
±21.5
±30
V
Notes:
*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
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Revision: C
2017/05/10
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Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel: 3Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
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convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
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approval of Micro Commercial Components Corporation.
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strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
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problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
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Revision: C
2017/05/10
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