2N7002KDW [SECOS]
Dual N-Channel Small Signal MOSFET; 双N沟道小信号MOSFET
| 型号： | 2N7002KDW |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Dual N-Channel Small Signal MOSFET |
| 文件： | 总2页 (文件大小：426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002KDW
115mA, 60V
Dual N-Channel Small Signal MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-363
FEATURES
Low on-resistance
Fast switching Speed
Low-voltage drive
A
E
5
L
6
4
Easily designed drive circuits
ESD protected:2000V
B
1
2
3
F
C
H
J
6
5
4
MECHANICAL DATA
Case: SOT-363
D2
G1
S1
K
D G
Case Material-UL flammability rating 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
0.100 REF.
0.525 REF.
A
B
C
D
2.00
2.15
1.15
0.90
2.20
2.45
1.35
1.10
G
H
J
Weight: 0.006 grams(approx.)
0.08
0.15
S2
G2
D1
K
8°
0.650 TYP.
E
F
1.20
0.15
1.40
0.35
L
1
2
3
DEVICE MARKING: RK
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Drain – Source Voltage
SYMBOL
RATING
60
UNIT
V
VDS
VGS
ID
Gate – Source Voltage
±20
V
Continuous Drain Current
Pulsed Drain Current
115
mA
mA
mA
mA
mW
°C
1
IDP
800
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Power Dissipation
ID
115
1
IDRP
800
PD
225
Operating Junction & Storage Temperature Range
Note:
TJ, TSTG
-55~150
1. Pw≦10μS, Duty cycle≦1%
2. When mounted on a 1x0.75x0.062 inch glass epoxy board
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
TEST CONDITION
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V(BR)DSS
IDSS
60
-
-
-
-
-
V
VGS=0V, ID =10μA
VDS=60V, VGS=0V
VDS=0V , VGS=±20V
1.0
±10
μA
μA
IGSS
-
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
RDS(ON)
gFS
1
-
1.85
2.5
7.5
7.5
-
V
Ω
VDS= VGS, ID =250μA
-
-
-
VGS=10V, ID=0.5A
Static Drain-Source On Resistance
Forward Transfer Admittance
-
VGS=5V, ID=0.05A
VDS=10V, ID=0.2A
*
80
ms
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
-
-
-
25
10
50
25
5
VDS=25V
VGS=0V
f=1MHz
Output Capacitance
pF
nS
Reverse Transfer Capacitance
3.0
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Turn-off Delay Time
Td(ON)
-
-
12
20
20
30
VDD=30V, I D=0.2A
Td(OFF)
RL=150Ω, V Gs=10V, RG=10Ω
* Pw≦300μS, Duty cycle≦1%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2009 Rev. A
Page 1 of 2
2N7002KDW
115mA, 60V
Dual N-Channel Small Signal MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-Dec-2009 Rev. A
Page 2 of 2
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