6MBP100VDN120-50 [FUJI]

Buffer/Inverter Based Peripheral Driver;
6MBP100VDN120-50
型号: 6MBP100VDN120-50
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

Buffer/Inverter Based Peripheral Driver

驱动 接口集成电路
文件: 总8页 (文件大小:1719K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
http://www.fujielectric.com/products/semiconductor/  
6MBP100VDN120-50  
IGBT MODULE (V series)  
1200V / 100A / IPM  
IGBT Modules  
Features  
• Temperature protection provided by directly detecting  
the junction temperature of the IGBTs  
Lowꢀpowerꢀlossꢀandꢀsoftꢀswitching  
HighꢀperformanceꢀandꢀhighꢀreliabilityꢀIGBTꢀwithꢀoverheatingꢀ  
protection  
Higherꢀreliabilityꢀbecauseꢀofꢀaꢀbigꢀdecreaseꢀinꢀnumberꢀofꢀ  
partsꢀinꢀbuilt-inꢀcontrolꢀcircuit  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings (T =25ºC, VCC=15V unless otherwise specified)  
C
Items  
Symbol  
Min.  
Max.  
Units  
Collector-Emitter Voltage (*1)  
Short Circuit Voltage  
V
V
CES  
SC  
0
1200  
800  
100  
200  
100  
625ꢀ  
-
V
V
400  
DC  
IC  
-
A
Collector Current  
1ms  
Icp  
-
A
Duty=100% (*2)  
-IC  
-
A
Collector Power Dissipation 1 device (*3)  
P
C
-
W
A
DC  
I
I
I
C
-
Collector Current  
1ms  
cp  
F
-
-
A
Forward Current of Diode  
Collector Power Dissipation 1 device (*3)  
Supply Voltage of Pre-Driver (*4)  
Input Signal Voltage (*5)  
-
-
-
A
P
V
V
V
C
-
W
V
CC  
in  
-0.5  
-0.5  
-0.5  
-
20  
V
CC+0.5  
V
Alarm Signal Voltage (*6)  
Alarm Signal Current (*7)  
Junction Temperature  
ALM  
VCC  
V
I
ALM  
20  
150  
mA  
ºC  
ºC  
ºC  
ºC  
Vrms  
T
T
T
T
j
-
Operating Case Temperature  
Storage Temperature  
opr  
stg  
sol  
-20  
-40  
-
110  
125  
Solder Temperature (*8)  
260  
Isolating Voltage (*9)  
V
iso  
-
AC2500  
Terminal (M4)  
Screw Torque  
-
-
1.7  
Nm  
Mounting (M4)  
Noteꢀ*1:ꢀVCESꢀshallꢀbeꢀappliedꢀtoꢀtheꢀinputꢀvoltageꢀbetweenꢀterminalꢀP-(U,V,ꢀW,ꢀB)ꢀandꢀ(U,V,ꢀW,ꢀB)-N.  
Noteꢀ*2:ꢀDuty=125ºC/Rth(j-c)Dꢀ/(I ×V ꢀMax.)×100  
Noteꢀ*3:ꢀP =125ºC/Rth(j-c)Qꢀ(Inverterꢀ&ꢀBrake)  
F
F
C
Noteꢀ*4:ꢀVCCꢀshallꢀbeꢀappliedꢀtoꢀtheꢀinputꢀvoltageꢀbetweenꢀterminalꢀNo.4ꢀandꢀ1,ꢀ8ꢀandꢀ5,ꢀ12ꢀandꢀ9,ꢀ14ꢀandꢀ13.  
Noteꢀ*5:ꢀVinꢀshallꢀbeꢀappliedꢀtoꢀtheꢀinputꢀvoltageꢀbetweenꢀterminalꢀNo.3ꢀandꢀ1,ꢀ7ꢀandꢀ5,ꢀ11ꢀandꢀ9,ꢀ15~18ꢀandꢀ13.  
Noteꢀ*6:ꢀVALMꢀshallꢀbeꢀappliedꢀtoꢀtheꢀvoltageꢀbetweenꢀterminalꢀNo.2ꢀandꢀ1,ꢀ6ꢀandꢀ5,ꢀ10ꢀandꢀ9,ꢀ19ꢀandꢀ13.  
Noteꢀ*7:ꢀIALMꢀshallꢀbeꢀappliedꢀtoꢀtheꢀinputꢀcurrentꢀtoꢀterminalꢀNo.2,6,10ꢀandꢀ19.  
Noteꢀ*8:ꢀImmersionꢀtimeꢀ10±1sec.ꢀ1time.  
Noteꢀ*9:ꢀTerminalꢀtoꢀbase,ꢀ50/60Hzꢀsineꢀwaveꢀ1min.ꢀAllꢀterminalsꢀshouldꢀbeꢀconnectedꢀtogetherꢀduringꢀtheꢀtest.  
1562  
APRILꢀ2014  
1
6MBP100VDN120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Electrical Characteristics (T  
j
=25ºC, VCC=15V unless otherwise specified)  
Symbol Conditions  
Items  
Min.  
Typ.  
Max.  
Units  
Collector Current at off signal input  
Collector-Emitter saturation voltage  
I
CES  
V
CE=1200V  
-
-
1.0  
mA  
V
Terminal  
Chip  
-
-
2.40  
V
V
CE(sat)  
I
I
C
=100A  
-
1.70  
-
V
Terminal  
Chip  
-
-
2.70  
V
Forward voltage of FWD  
F
F
=100A  
-
2.10  
-
V
Collector Current at off signal input  
Collector-Emitter saturation voltage  
I
CES  
V
CE=-V  
-
-
-
-
-
-
-
-
-
mA  
V
Terminal  
Chip  
-
-
V
CE(sat)  
I
I
C
=-A  
-
-
V
Terminal  
Chip  
-
-
-
-
V
Forward voltage of FWD  
Switching time  
V
F
F
=-A  
V
t
t
on  
off  
1.1  
-
-
µs  
µs  
VDC=600V,ꢀT  
j
=125ºC,  
ꢀIC  
=100Aꢀ  
2.1  
VDC=600V  
t
rr  
-
-
0.3  
µs  
ꢀIF  
=100A  
Supply current of P-side pre-driver (per one unit)  
Supply current of N-side pre-driver  
I
ccp  
ccn  
-
-
-
-
21  
69  
1.6  
1.9  
-
mA  
mA  
V
SwitchingꢀFrequency=ꢀ0-15kHz  
=-20~110ºC  
T
C
I
V
inth(on)  
inth(off)  
ON  
1.2  
1.5  
150  
-
1.4  
1.7  
-
Input signal threshold voltage  
Vin-GND  
V
OFF  
V
Inverter  
Brake  
A
Over Current Protection  
Level  
I
OC  
T
j
=125ºC  
-
-
A
Over Current Protection Delay time  
Short Circuit Protection Delay time  
IGBT Chips Over Heating Protection Temperature Level  
Over Heating Protection Hysteresis  
Under Voltage Protection Level  
t
dOC  
SC  
T
T
j
j
=125ºC  
=125ºC  
-
5
-
µs  
µs  
ºC  
ºC  
V
t
-
2
3
T
jOH  
jH  
SurfaceꢀofꢀIGBTꢀChips  
150  
-
-
-
T
20  
-
-
V
UV  
H
11.0  
0.2  
1.0  
2.5  
5.0  
960  
12.5  
-
Under Voltage Protection Hysteresis  
V
0.5  
2.0  
4.0  
8.0  
1265  
V
tALM(OC)  
tALM(UV)  
t
ALM(TjOH)  
2.4  
4.9  
11.0  
1570  
ms  
ms  
ms  
Ω
ALM-GND  
T
Alarm Signal Hold Time  
VCC  
10V  
C
=-20~110ºC  
Resistance for current limit  
R
ALM  
Thermal Characteristics (T = 25ºC)  
C
Items  
Symbol  
Min.  
Typ.  
Max.  
Units  
IGBT  
FWD  
IGBT  
FWD  
R
R
R
R
R
th(j-c)Q  
th(j-c)D  
th(j-c)Q  
th(j-c)D  
th(c-f)  
-
-
-
-
-
-
0.20  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Inverter  
Brake  
-
0.34  
Junction to Case Thermal Resistance (*10)  
-
-
-
-
-
Case to Fin Thermal Resistance with Compound  
0.05  
Noteꢀ*10:ꢀForꢀ1device,ꢀtheꢀmeasurementꢀpointꢀofꢀtheꢀcaseꢀisꢀjustꢀunderꢀtheꢀchip.  
Noise Immunity (VDC=600V, VCC=15V)  
Items  
Conditions  
Pulseꢀwidthꢀ1μs,ꢀpolarityꢀ±, 10ꢀmin.  
Judgeꢀ:ꢀnoꢀover-current,ꢀnoꢀmissꢀoperating  
Min.  
±2.0  
Typ.  
Max.  
Units  
Common mode rectangular noise  
-
-
kV  
Recommended Operating Conditions  
Items  
Symbol  
Min.  
-
Typ.  
Max.  
800  
16.5  
20  
Units  
V
DC Bus Voltage  
VDC  
-
Power Supply Voltage of Pre-Driver  
Switching frequency of IPM  
VCC  
13.5  
-
15.0  
V
fSW  
-
-
-
kHz  
µs  
Arm shoot through blocking time for IPM's input signal  
Screw Torque (M4)  
t
dead  
1.0  
1.3  
-
-
1.7  
Nm  
Weight  
Items  
Symbol  
Min.  
Typ.  
Max.  
Units  
Weight  
Wt  
-
290  
-
g
2
6MBP100VDN120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Block Diagram  
P
U
VccU  
VinU ③  
Pre-Driver  
Pre-Driver  
ALMU ②  
RALM  
RALM  
RALM  
GNDU ①  
VccV ⑧  
VinV ⑦  
ALM V ⑥  
V
GNDV ⑤  
VccW ⑫  
VinW ⑪  
Pre-Driver  
Pre-Driver  
Pre-Driver  
Pre-Driver  
ALM W ⑩  
W
GNDW ⑨  
Vcc ⑭  
VinX ⑯  
GND ⑬  
VinY ⑰  
VinZ ⑱  
N
ALM ⑲  
RALM  
Pre-drivers include following functions  
1. Amplifier for driver  
2. Short circuit protection  
3. Under voltage lockout circuit  
4. Over current protection  
5. IGBT chip over heating protection  
3
6MBP100VDN120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Characteristics (Representative)  
Power supply current vs. Switching frequency  
=25ºC (typ.)  
Input signal threshold voltage  
vs. Power supply voltage (typ.)  
T
j
100  
80  
60  
40  
20  
0
3
2.5  
2
N-side  
P-side  
T =25125℃  
C
V
V
V
cc=17V  
cc=15V  
cc=13V  
V
inth(off)  
inth(on)  
1.5  
1
V
V
V
V
cc=17V  
cc=15V  
cc=13V  
0.5  
0
0
5
10  
15  
20  
25  
12  
13  
14  
15  
16  
17  
18  
Switchig frequency : fsw [kHz]  
Power supply voltage : Vcc [V]  
Under voltage vs. Junction temperature (typ.)  
Under voltage hysterisis  
vs. Junction temperature (typ.)  
15  
12  
9
1
0.8  
0.6  
0.4  
0.2  
0
6
3
0
0
20  
40  
60  
80 100 120 140  
0
50  
100  
150  
Junction temperature : T  
j
[ºC]  
Junction temperature : T [ºC]  
j
Alarm hold time vs. Power supply voltage (typ.)  
Over heating characteristics  
T
jOH,TjH vs. VCC (typ.)  
10  
8
200  
150  
100  
50  
T
jOH  
t
ALM(TjOH)  
6
4
t
ALM(OC)  
2
TjH  
0
0
12  
13  
14  
15  
16  
17  
18  
12  
13  
14  
15  
16  
17  
18  
Power supply voltage : Vcc [V]  
Power supply voltage : Vcc [V]  
4
6MBP100VDN120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Inverter  
Collector current vs. Collector-Emitter voltage  
=25 [Chip] (typ.)  
Collector current vs. Collector-Emitter voltage  
T
j
T
j
=25  
[Terminal] (typ.)  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
VCC=15V  
V
CC=15V  
V
CC=13V  
V
CC=17V  
VCC=17V  
VCC=13V  
60  
60  
40  
40  
20  
20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
3.5  
3.5  
Collector-Emitter voltage  
V
CE [ V ]  
Collector-Emitter voltage  
VCE [ V ]  
Collector current vs. Collector-Emitter voltage  
=125 [Chip] (typ.)  
Collector current vs. Collector-Emitter voltage  
T
j
T
j
=125  
[Terminal] (typ.)  
V
CC=15V  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
V
CC=15V  
V
CC=17V  
V
CC=13V  
V
CC=17V  
VCC=13V  
60  
60  
40  
40  
20  
20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
0.5  
1
1.5  
2
2.5  
3
Collector-Emitter voltage  
VCE [ V ]  
Collector-Emitter voltage  
VCE [ V ]  
Forward current vs. Forward voltage  
[Chip] (typ.)  
Forward current vs. Forward voltage  
[Terminal] (typ.)  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
T
j
=125  
Tj=25  
T
j=25  
T
j=125  
60  
60  
40  
40  
20  
20  
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
0.5  
1
1.5  
2
2.5  
3
3.5  
Forward voltage  
V [ V ]  
F
Forward voltage  
V [ V ]  
F
5
6MBP100VDN120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Switching Loss vs. Collector Current (typ.)  
DC=600V,VCC=15V,T=25  
Switching Loss vs. Collector Current (typ.)  
V
j
V
DC=600V,VCC=15V,T=125℃  
j
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
E
on  
E
on  
E
E
off  
E
off  
rr  
E
rr  
0
0
0
20 40 60 80 100 120 140 160  
0
20  
40  
60  
80 100 120 140 160  
Collector current I [ A ]  
C
Collector current I [ A ]  
C
Transient thermal resistance (max.)  
Reversed biased safe operating area  
cc=15V,T125℃  
V
j
10  
1
400  
350  
300  
250  
200  
150  
100  
50  
FWD  
IGBT  
0.1  
RBSOA  
(Repetitive pulse)  
0
0.01  
0.001  
0
200 400 600 800 1000 1200 1400  
0.01  
0.1  
1
10  
Pulse width P [ sec ]  
W
Collector-Emitter voltage VCE [ V ]  
Power derating for IGBT (max.)  
[per device]  
Power derating for FWD (max.)  
[per device]  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
0
20 40 60 80 100 120 140 160  
0
20 40 60 80 100 120 140 160  
Case Temperature T [ ]  
C
Case Temperature T [ ]  
C
6
6MBP100VDN120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Switching time vs. Collector current (typ.)  
DC=600V, Vcc=15V, T=25ºC  
Switching time vs. Collector current (typ.)  
V
DC=600V,VCC=15V,T=125  
j
V
j
10000  
1000  
100  
10000  
1000  
100  
ton  
ton  
toff  
toff  
tf  
tf  
10  
10  
0
20 40 60 80 100 120 140 160  
0
20 40 60 80 100 120 140 160  
Collector current IC [ A ]  
Collector current : I [A]  
c
Reverse recovery characteristics (typ.)  
Over current protection  
t
rr,Irr vs. I  
F
vs. Junction temperature (typ.) VCC=15V  
1000  
100  
10  
400  
350  
300  
250  
200  
150  
100  
50  
trr  
T
j
=125  
=25℃  
t
rr  
Tj  
Irr T  
j
=125℃  
I
rr  
Tj  
=25℃  
1
0
0
0
20 40 60 80 100 120 140 160  
20  
40  
60  
80  
100 120 140  
[ºC]  
Forward current : I  
F
[A]  
Junction temperature : T  
j
7
6MBP100VDN120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Outline Drawings, mm  
Weight: 290g(typ.)  
WARNING  
1.ꢀThisꢀCatalogꢀcontainsꢀtheꢀproductꢀspecifications,ꢀcharacteristics,ꢀdata,ꢀmaterials,ꢀandꢀstructuresꢀasꢀofꢀAprilꢀ2014.ꢀ  
Theꢀcontentsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnoticeꢀforꢀspecificationꢀchangesꢀorꢀotherꢀreasons.ꢀꢀWhenꢀusingꢀaꢀproductꢀlistedꢀinꢀthisꢀCatalog,ꢀbeꢀ  
surꢀtoꢀobtainꢀtheꢀlatestꢀspecifications.  
2.ꢀAllꢀapplicationsꢀdescribedꢀinꢀthisꢀCatalogꢀexemplifyꢀtheꢀuseꢀofꢀFuji'sꢀproductsꢀforꢀyourꢀreferenceꢀonly.ꢀꢀNoꢀrightꢀorꢀlicense,ꢀeitherꢀexpressꢀorꢀ  
implied,ꢀunderꢀanyꢀpatent,ꢀcopyright,ꢀtradeꢀsecretꢀorꢀotherꢀintellectualꢀpropertyꢀrightꢀownedꢀbyꢀFujiꢀElectricꢀCo.,ꢀLtd.ꢀisꢀ(orꢀshallꢀbeꢀdeemed)ꢀ  
granted.ꢀꢀFujiꢀElectricꢀCo.,ꢀLtd.ꢀmakesꢀnoꢀrepresentationꢀorꢀwarranty,ꢀwhetherꢀexpressꢀorꢀimplied,ꢀrelatingꢀtoꢀtheꢀinfringementꢀorꢀallegedꢀ  
infringementꢀofꢀother'sꢀintellectualꢀpropertyꢀrightsꢀwhichꢀmayꢀariseꢀfromꢀtheꢀuseꢀofꢀtheꢀapplicationsꢀdescribedꢀherein.  
3.ꢀAlthoughꢀFujiꢀElectricꢀCo.,ꢀLtd.ꢀisꢀenhancingꢀproductꢀqualityꢀandꢀreliability,ꢀaꢀsmallꢀpercentageꢀofꢀsemiconductorꢀproductsꢀmayꢀbecomeꢀ  
faulty.ꢀꢀWhenꢀusingꢀFujiꢀElectricꢀsemiconductorꢀproductsꢀinꢀyourꢀequipment,ꢀyouꢀareꢀrequestedꢀtoꢀtakeꢀadequateꢀsafetyꢀmeasuresꢀtoꢀpreventꢀ  
theꢀequipmentꢀfromꢀcausingꢀaꢀphysicalꢀinjury,ꢀfire,ꢀorꢀotherꢀproblemꢀifꢀanyꢀofꢀtheꢀproductsꢀbecomeꢀfaulty.ꢀꢀItꢀisꢀrecommendedꢀtoꢀmakeꢀyourꢀ  
designꢀfailsafe,ꢀflameꢀretardant,ꢀandꢀfreeꢀofꢀmalfunction.  
4.ꢀTheꢀproductsꢀintroducedꢀinꢀthisꢀCatalogꢀareꢀintendedꢀforꢀuseꢀinꢀtheꢀfollowingꢀelectronicꢀandꢀelectricalꢀequipmentꢀwhichꢀhasꢀnormalꢀreliabilityꢀ  
requirements.ꢀ  
•ꢀComputersꢀ  
•ꢀOAꢀequipmentꢀ  
•ꢀCommunicationsꢀequipmentꢀ(terminalꢀdevices)ꢀ  
•ꢀMeasurementꢀequipmentꢀ  
•ꢀMachineꢀtoolsꢀ  
•ꢀAudiovisualꢀequipmentꢀ •ꢀElectricalꢀhomeꢀappliancesꢀ  
•ꢀPersonalꢀequipmentꢀ •ꢀIndustrialꢀrobotsꢀetc.  
5.ꢀIfꢀyouꢀneedꢀtoꢀuseꢀaꢀproductꢀinꢀthisꢀCatalogꢀforꢀequipmentꢀrequiringꢀhigherꢀreliabilityꢀthanꢀnormal,ꢀsuchꢀasꢀforꢀtheꢀequipmentꢀlistedꢀbelow,ꢀ  
itꢀisꢀimperativeꢀtoꢀcontactꢀFujiꢀElectricꢀCo.,ꢀLtd.ꢀtoꢀobtainꢀpriorꢀapproval.ꢀꢀWhenꢀusingꢀtheseꢀproductsꢀforꢀsuchꢀequipment,ꢀtakeꢀadequateꢀ  
measuresꢀsuchꢀasꢀaꢀbackupꢀsystemꢀtoꢀpreventꢀtheꢀequipmentꢀfromꢀmalfunctioningꢀevenꢀifꢀaꢀFuji'sꢀproductꢀincorporatedꢀinꢀtheꢀequipmentꢀ  
becomesꢀfaulty.ꢀ  
•ꢀTransportationꢀequipmentꢀ(mountedꢀonꢀcarsꢀandꢀships)ꢀ  
•ꢀTraffic-signalꢀcontrolꢀequipmentꢀ  
•ꢀEmergencyꢀequipmentꢀforꢀrespondingꢀtoꢀdisastersꢀandꢀanti-burglaryꢀdevicesꢀ  
•ꢀMedicalꢀequipment  
•ꢀTrunkꢀcommunicationsꢀequipmentꢀ  
•ꢀGasꢀleakageꢀdetectorsꢀwithꢀanꢀauto-shut-offꢀfeatureꢀ  
•ꢀSafetyꢀdevicesꢀ  
6.ꢀDoꢀnotꢀuseꢀproductsꢀinꢀthisꢀCatalogꢀforꢀtheꢀequipmentꢀrequiringꢀstrictꢀreliabilityꢀsuchꢀasꢀtheꢀfollowingꢀandꢀequivalentsꢀtoꢀstrategicꢀequipmentꢀ  
(withoutꢀlimitation).ꢀ  
•ꢀSpaceꢀequipmentꢀ  
•ꢀAeronauticꢀequipmentꢀ  
•ꢀNuclearꢀcontrolꢀequipmentꢀ  
•ꢀSubmarineꢀrepeaterꢀequipment  
7.ꢀCopyrightꢀ©1996-2014ꢀbyꢀFujiꢀElectricꢀCo.,ꢀLtd.ꢀAllꢀrightsꢀreserved.ꢀ  
NoꢀpartꢀofꢀthisꢀCatalogꢀmayꢀbeꢀreproducedꢀinꢀanyꢀformꢀorꢀbyꢀanyꢀmeansꢀwithoutꢀtheꢀexpressꢀpermissionꢀofꢀFujiꢀElectricꢀCo.,ꢀLtd.  
8.ꢀIfꢀyouꢀhaveꢀanyꢀquestionꢀaboutꢀanyꢀportionꢀinꢀthisꢀCatalog,ꢀaskꢀFujiꢀElectricꢀCo.,ꢀLtd.ꢀorꢀitsꢀsalesꢀagentsꢀbeforeꢀusingꢀtheꢀproduct.ꢀ  
NeitherꢀFujiꢀElectricꢀCo.,ꢀLtd.ꢀnorꢀitsꢀagentsꢀshallꢀbeꢀliableꢀforꢀanyꢀinjuryꢀcausedꢀbyꢀanyꢀuseꢀofꢀtheꢀproductsꢀnotꢀinꢀaccordanceꢀwithꢀinstructionsꢀ  
setꢀforthꢀherein.  
8

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