6MBP150RA-120 [ETC]
IGBTs ; IGBT的\n
| 型号： | 6MBP150RA-120 |
| 厂家： | 
ETC |
| 描述： | IGBTs
|
| 文件： | 总6页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT IPM
600V
6×150A
6MBP 150RA-060
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
n Outline Drawing
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings
Units
Min.
0
0
200
0
Max.
450
500
400
600
150
300
150
595
20
DC Bus Voltage
DC Bus Voltage (surge)
VDC
VDC(Surge)
VSC
VCES
IC
ICP
-IC
PC
V
A
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Collector
Current
Collector Power Dissipation
Voltage of Power Supply for Driver
Input Signal Voltage
Continuous
1ms
Duty=58.8%
One Transistor
W
V
VCC
VIN
0
0
VZ
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
IIN
VALM
IALM
1
VCC
15
mA
V
mA
0
Junction Temperature
Operating Temperature
Storage Temperature
Tj
TOP
Tstg
150
100
125
-20
-40
°C
Isolation Voltage
A.C. 1min.
Viso
Mounting *1
Terminals *1
2500
3.5
3.5
V
Nm
Screw Torque
Note: *1: Recommendable Value; 2.5 ~ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
ICES
Conditions
CE=600V, Input Terminal Open
IC=150A
-IC=150A
Min.
Typ.
Typ.
Max.
1.0
2.8
Units
mA
V
Collector Current At Off Signal Input
INV Collector-Emitter Saturation Voltage
Forward Voltage of FWD
V
VCE(Sat)
VF
3.0
V
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Min.
3
10
1.00
1.25
Max.
18
65
1.70
1.95
Units
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
ICCP
ICCN
mA
1.35
1.60
8.0
VIN(th)
Input Signal Threshold Voltage
Off
V
Input Zener Voltage
VZ
RIN=20kW
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
TCOH
TCH
TjOH
TjH
VDC=0V, IC=0A, Case Temp.
110
150
225
125
20
20
°C
Surface of IGBT Chip
IOC
Tj=125°C
Tj=25°C
A
µs
ms
W
tDOC
tALM
RALM
VUV
VH
10
2
1500
1.5
1425
11.0
0.2
1575
12.5
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Symbols
Conditions
Min.
Typ.
Max.
Units
tON
IC=150A, VDC=300V
0.3
Switching Time
tOFF
tRR
3.6
0.4
µs
IF=150A, VDC=300V
• Thermal Characteristics
Items
Symbols
Rth(j-c)
Conditions
Inverter IGBT
Diode
Min.
Typ.
Max.
0.21
0.47
Units
Thermal Resistance
Rth(j-c)
°C/W
Rth(c-f)
With Thermal Compound
0.05
IGBT IPM
600V
6×150A
6MBP 150RA-060
n Equivalent Circuit
Drivers include following functions
À Short circuit protection circuit
Á Amplifier for driver
 Undervoltage protection circuit
à Overcurrent protection circuit
Ä IGBT Chip overheating protection
IGBT IPM
600V
6×150A
6MBP 150RA-060
n Control Circuit
Input Signal Threshold Voltage
vs. Power Supply Voltage
Power Supply Current vs. Switching Frequency
Tj=100°C
2,5
2,0
1,5
1,0
0,5
0,0
40
35
30
25
20
15
10
5
Tj=25°C
VCC=17V
VCC=15V
VCC=13V
Tj=125°C
N-Side
Vin(off)
Vin(on)
VCC=17V
VCC=15V
VCC=13V
P-Side
0
12
13
14
15
16
17
18
0
5
10
15
20
25
Switching Frequency : fsw [kHz]
Power Supply Voltage : Vcc [V]
Under Voltage Hysterisis vs. Junction Temperature
Under Voltage vs. Junction Temperature
14
12
10
8
1,0
0,8
0,6
0,4
0,2
0,0
6
4
2
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Junction Temperature : Tj [°C]
Junction Temperature: Tj [°C]
Alarm Hold Time vs. Power Supply Voltage
Over Heating Characteristics
TcOH, TjOH, TcH, TjH vs. Vcc
3,0
200
150
100
50
2,5
2,0
1,5
1,0
0,5
0,0
TjOH
Tj=125°C
Tj=25°C
TcOH
TcH,TjH
0
12
12
13
14
15
16
17
18
13
14
15
16
17
18
Power Supply Voltage : Vcc [V]
Power Supply Voltage : Vcc [V]
IGBT IPM
600V
6×150A
6MBP 150RA-060
n Inverter
Collector Current vs. Collector-Emitter Voltage
Tj=125°C
Collector Current vs. Collector-Emitter Voltage
Tj=25°C
300
250
200
150
100
50
300
250
200
150
100
50
VCC=17V,15V, 13V
VCC=17V,15V, 13V
0
0
0
1
2 3
4
0
1
2
3
4
Collector-Emitter Voltage
:
VCE [V]
Collector-Emitter Voltage : VCE [V]
Switching Time vs. Collector Current
VDC=300V, VCC=15V, Tj=125°C
Switching Time vs. Collector Current
VDC=300V, VCC=15V, Tj=25°C
toff
ton
ton
toff
1000
1000
tf
tf
100
100
0
50
100
150
IC [A]
200
250
0
50
100
150
IC [A]
200
250
Collector Current
:
Collector Current :
Reverse Recovery Characteristics
trr, Irr vs. IF
Forward Voltage vs. Forward Current
300
250
200
150
100
50
trr=125°C
T =125°C
25°C
100
j
trr=25°C
Irr=125°C
Irr=125°C
10
0
0
1
2
3
4
0
50
100
150
200
250
Forward Voltage
:
VF [V]
Forward Current : IF [A]
IGBT IPM
600V
6×150A
6MBP 150RA-060
n Inverter
Reverse Biased Safe Operating Area
VCC=15V, Tj<125°C
Transient Thermal Resistance
1500
1350
1200
1050
900
750
600
450
300
150
0
SCSOA
100
(non-repetitive pulse)
FWD
IGBT
10-1
RBSOA
(repetitive pulse)
10-2
10-3
0
100
200
300
400
500
600
700
10-2
10-1
: PW [sec]
100
Pulse Width
Collector-Emitter Voltage : VCE [V]
Power Derating For IGBT
(per device)
Power Derating For FWD
(per device)
700
600
500
400
300
200
100
0
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Case Temperature : TC (°C)
Case Temperature : TC (°C)
Switching Loss vs. Collector Current
VDC=300V, VCC=15V, Tj=25°C
Switching Loss vs. Collector Current
VDC=300V, VCC=15V, Tj=125°C
15
10
5
30
25
20
15
10
5
Eon
Eon
Eoff
Eoff
Err
Err
0
0
0
50
100
150
200
250
0
50
100
150
200
250
Collector Current
:
IC [A]
IGBT IPM
600V
6×150A
6MBP 150RA-060
n Inverter
Over Current Protection vs. Junction Temperature
Vcc=15 V
420
360
300
240
180
120
60
0
0
20
40
60
80
100
120
140
Junction Temperature: Tj [°C]
n Outline Drawing
Weight: 440g
Specification is subject to change without notice
October 98
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