6MBP150RA060 [FUJI]
600V / 150A 6 in one-package; 600V / 150A 6在一包
| 型号： | 6MBP150RA060 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | 600V / 150A 6 in one-package |
| 文件： | 总7页 (文件大小：357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6MBP150RA060
IGBT-IPM R series
600V / 150A 6 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Rating
Unit
Item
Min.
Max.
V
DC bus voltage
VDC
0
450
500
400
600
150
300
150
595
150
20
V
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
VDC(surge)
VSC
0
V
200
V
VCES
IC
0
A
DC
-
A
1ms
ICP
-
A
Duty=58.8% -IC
-
W
°C
V
Collector power dissipation One transistor
Junction temperature
PC
-
Tj
-
0
Input voltage of power supply for Pre-Driver
Input signal voltage
VCC *1
Vin *2
Iin
V
0
Vz
mA
V
Input signal current
-
1
Alarm signal voltage
VALM *3
IALM *4
Tstg
0
Vcc
15
mA
°C
°C
kV
N·m
N·m
Alarm signal current
-
Storage temperature
-40
-20
-
125
100
AC2.5
3.5 *6
3.5 *6
Fig.1 Measurement of case temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Top
Viso *5
Screw torque
Mounting (M5)
Terminal (M5)
-
-
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
Symbol
Condition
Min.
Typ.
Max.
1.0
Unit
mA
V
ICES
INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
VCE=600V input terminal open
Ic=150A
–
–
–
–
–
–
VCE(sat)
VF
2.8
-Ic=150A
3.0
V
6MBP150RA060
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Symbol Condition
Min.
3
Typ.
Max.
18
Unit
mA
mA
V
fsw=0 to 15kHz Tc=-20 to 100°C *7
Iccp
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
-
-
fsw=0 to 15kHz Tc=-20 to 100°C *7
ICCN
Vin(th)
10
65
ON
1.00
1.25
1.35
1.70
OFF
V
1.60
8.0
1.95
Rin=20k ohm
V
VZ
Input zener voltage
-
-
VDC=0V, Ic=0A, Case temperature, Fig.1
°C
°C
°C
°C
A
TCOH
TCH
TjOH
TjH
Over heating protection temperature level
Hysteresis
110
-
125
-
150
-
20
-
-
-
-
-
surface of IGBT chips
IGBT chips over heating protection temperature level
Hysteresis
-
20
Tj=125°C
IOC
Collector current protection level
Over current protection delay time
Under voltage protection level
Hysteresis
INV
225
-
-
Tj=25°C Fig.2
µs
V
tDOC
VUV
VH
10
11.0
-
12.5
V
0.2
1.5
-
-
-
ms
µs
ohm
tALM
tSC
Alarm signal hold time
2
-
Tj=25°C Fig.3
SC protection delay time
Limiting resistor for alarm
-
12
RALM
1425
1500
1575
*7 Switching frequency of IPM
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Symbol Condition
Min.
Typ.
Max.
-
Unit
µs
Switching time (IGBT)
Switching time (FWD)
ton
toff
trr
IC=150A, VDC=300V
0.3
-
-
-
-
-
3.6
0.4
µs
IF=150A, VDC=300V
µs
Definition of tsc
Thermal characteristics( Tc=25°C)
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
Max.
Unit
Junction to Case thermal resistance
INV
IGBT
FWD
-
-
0.21
0.47
-
°C/W
°C/W
°C/W
Case to fin thermal resistance with compound
0.05
Recommendable value
Item
Symbol
Min.
200
13.5
Typ.
Max.
400
16.5
20
Unit
V
DC bus voltage
VDC
VCC
fSW
-
-
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
15
-
V
1
kHz
N·m
N·m
Screw torque
Mounting (M5)
Terminal (M5)
2.5
2.5
-
3.0
-
-
3.0
6MBP150RA060
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
6MBP150RA060
IGBT-IPM
Characteristics (Representative)
Control circuit
Power supply current vs. Switching frequency
Input signal threshold voltage
vs. Power supply voltage
Tj=25°C
········· Tj=125°C
N-side
Tj=100°C
P-side
·········
2.5
2.0
1.5
1.0
0.5
0
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Switching frequency fsw (kHz)
Power supply voltage Vcc (V)
Undervoltage hysterisis vs. Junction temperature
Undervoltage vs. Junction temperature
1.0
0.8
0.6
0.4
0.2
0
14
12
10
8
6
4
2
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Junction temperature Tj (°C)
Junction temperature Tj (°C)
Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
Alarm hold time vs. Power supply voltage
3.0
2.5
2.0
1.5
1.0
0.5
200
150
100
50
0
12
0
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage Vcc (V)
Power supply voltage Vcc (V)
6MBP150RA060
IGBT-IPM
Inverter
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj=125°C
Tj=25°C
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
1
2
3
4
0
1
2
3
4
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
1000
1000
100
100
0
50
100
150
200
250
0
50
100
150
200
250
Collector current IC (A)
Collector current IC (A)
Forward current vs. Forward voltage
Reverse recovery characteristics trr, Irr, vs. IF
300
250
200
150
100
50
100
10
0
0
1
2
3
4
0
50
100
150
200
250
Foeward voltage VF (V)
Foeward current IF (A)
6MBP150RA060
IGBT-IPM
Inverter
Reverse biased safe operating area
Transient thermal resistance
<
Vcc=15V, Tj 125°C
=
1500
1350
1200
1050
900
750
600
450
300
150
1
0.1
0.01
0
0.001
0.01
0.1
1
0
100
200
300
400
500
600
700
Collector-Emitter voltage VCE (V)
Pulse width Pw (sec.)
Power derating for IGBT (per device)
Power derating for FWD (per device)
300
250
200
150
100
50
700
600
500
400
300
200
100
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Case temperature Tc (°C)
Case temperature Tc (°C)
Switching loss vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
Switching loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
50
100
150
200
250
0
50
100
150
200
250
Collector current Ic (A)
Collector current Ic (A)
6MBP150RA060
IGBT-IPM
Overcurrent protection vs. Junction temperature
Vcc=15V
420
360
300
240
180
120
60
0
0
20
40
60
80
100
120
140
Junction temperature Tj (°C)
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