6MBP150RTJ060 [FUJI]
IGBT - IPM; IGBT - IPM
| 型号： | 6MBP150RTJ060 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT - IPM |
| 文件： | 总22页 (文件大小：1038K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPECIFICATION
IGBT - IPM
Device Name
Type Name
Spec. No.
:
:
6MBP150RTJ060
MS6M 0677
:
Fuji Electric Co.,Ltd.
Matsumoto Factory
N.Matsuda
Jan. 29 ‘03
Jan. 29 ‘03
Jan.-29 -‘03
a
Nishiura
T.Fujihira
1
MS6M 0677
K.Yamada
22
H04-004-07
R e v i s e d R e c o r d s
Classi-
fication
Applied
date
Date
Ind.
Content
Drawn
Checked
Approved
T.Fujihira
A.Nishiura
K.Yamada
Issued
date
enactment
N.Matsuda
Jan.-29-’03
T.Miyasaka
K.Yamada
a
N.Matsuda
T.Fujihira
Reliability Test Items
May.-19-’03
Revision
a
2
MS6M 0677
22
H04-004-06
a
1. Package Outline Drawings
Package type : P621
±1
109
95
±0.3
13.8 ±0.3
66.44
±0.2
3.22 ±0.3
10 ±0.2
10
10 ±0.2 12 ±0.25
4- φ5.5
±0.15
±0.15
±0.15
6
2±0.1
6
6
1
B
P
N
W
V
U
0.5
24
26
26
19- □0.5
2- φ2.5
6-M5
Lot No.
Indication of Lot No.
Odered No. in monthly
Manufactured month
(Jan.～Sep.:1～9,Oct.:O,Nov.:N,Dec.:D)
2 ±0.1
Last digit of manufactured year
2 ±0.1
2 ±0.1
3.22 ±0.3
2
2
2
φ2.5
(φ1～1.5)
□0.5
Details of control terminals
Dimensions in mm
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2. Pin Descriptions
Main circuit
Symbol
Description
Positive input supply voltage.
Output (U).
P
U
V
Output (V).
W
N
B
Output (W).
Negative input supply voltage.
No contact.
Control circuit
No Symbol
Description
1
2
3
4
GNDU High side ground (U).
ALMU Alarm signal output (U).
VinU Logic input for IGBT gate drive (U).
VccU High side supply voltage (U).
5
6
7
8
GNDV High side ground (V).
ALMV Alarm signal output (V).
VinV Logic input for IGBT gate drive (V).
VccV High side supply voltage (V).
9
GNDW High side ground (W).
10
11
12
ALMW Alarm signal output (W).
VinW Logic input for IGBT gate drive (W).
VccW High side supply voltage (W).
13
14
15
16
17
18
19
GND Low side ground.
Vcc Low side supply voltage.
VinDB No contact.
VinX Logic input for IGBT gate drive (X).
VinY Logic input for IGBT gate drive (Y).
VinZ Logic input for IGBT gate drive (Z).
ALM Low side alarm signal output.
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3. Block Diagram
P
VccU
4
3
2
VinU
Pre - Driver
Pre- Driver
Pre- Driver
ALMU
RALM 1.5k
RALM 1.5k
RALM 1.5k
Vz
Vz
Vz
GNDU
VccV
1
8
U
VinV
7
6
ALMV
GNDV
VccW
5
V
12
11
10
VinW
ALMW
9
GNDW
W
14
16
Vcc
VinX
Pre- Driver
Vz
13
17
GND
VinY
Pre Driver
-
Vz
VinZ
18
Pre- Driver
Vz
B
NC
VinDB
15
N
Over heating protection
circuit
ALM
19
Pre-drivers include following functions
1.Amplifier for driver
RALM 1.5k
2.Short circuit protection
3.Under voltage lockout circuit
4.Over current protection
5.IGBT chip over heating protection
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4. Absolute Maximum Ratings
Tc=25°C unless otherwise specified.
Items
Symbol
VDC
Min.
Max.
450
500
400
600
150
300
150
431
20
Units
V
Bus Voltage
DC
0
VDC(surge)
Vsc
(between terminal P and N)
Surge
0
V
Short operating
200
V
Collector-Emitter Voltage *1
Collector Current
Vces
Ic
0
V
DC
-
A
1ms
Icp
-
-
A
Duty=68.2% *2
One transistor *3
-Ic
A
Collector Power Dissipation
Supply Voltage of Pre-Driver *4
Input Signal Voltage *5
Input Signal Current
Pc
-
W
V
Vcc
-0.5
-0.5
-
Vin
Vcc+0.5
3
V
Iin
mA
V
Alarm Signal Voltage *6
Alarm Signal Current *7
Junction Temperature
Operating Case Temperature
Storage Temperature
VALM
Ｉ ALM
Tj
-0.5
-
Vcc
20
mA
°C
°C
°C
-
150
100
125
Topr
Tstg
-20
-40
Isolating Voltage
Viso
-
-
-
AC2500
3.5
V
(Terminal to base, 50/60Hz sine wave 1min.)
Terminal (M5)
Screw Torque
Nm
Mounting (M5)
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or Ｖ or W,
N and U or V or W .
*2 : 125°C/FWD Rth(j-c)/(Ic×VF MAX)=125/0.47/(150×2.6)×100=68.2%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.29=431W [Inverter]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5,
12 and 9, 14 and 13.
*5 : Vｉ ｎ shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9,
16,17,18 and 13.
*6 : Ｖ Ａ Ｌ Ｍ shall be applied to the voltage between terminal No.2 and 1, No6 and 5,
No10 and 9, No.19 and 13.
*7 : Ｉ Ａ Ｌ Ｍ shall be applied to the input current to terminal No.2,6,10 and 19.
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5. Electrical Characteristics
Tj=25°C, Vcc=15V unless otherwise specified.
5.1 Main circuit
Item
Conditions
Ｖ Ｃ Ｅ =600V
Symbol
Min.
-
Typ.
-
Max.
1.0
Units
mA
Collector Current
ICES
at off signal input
Collector-Emitter
saturation voltage
Vin terminal open.
Iｃ =150A Terminal
Chip
-
-
1.8
-
2.3
-
Ｖ
V
Ｖ
V
VCE(sat)
-
-Iｃ =150A Terminal
Chip
-
-
2.6
-
Forward voltage of FWD
VF
1.6
-
VDC=300V, Tj=125°C
Ic=150A Fig.1, Fig.6
VDC=300V
Turn-on time
ton
toff
1.2
-
-
Turn-off time
-
3.6
s
Reverse recovery time
trr
-
-
-
0.3
-
IF=150A Fig.1, Fig.6
internal wiring
Maximum AvalancheEnergy
(A non-repetition)
PAV inductance=50nH
Main circuit wiring
170
mJ
inductance=54nH
5.2 Control circuit
Item
Conditions
Switching Frequency
: 0~15kHz
Symbol
Iccp
Min.
-
Typ.
-
Max.
18
Units
mA
Supply current
of P-side pre-driver (one unit)
Supply current
Iccn Tc=-20~125°C Fig.7
-
-
65
mA
of N-side pre-driver
ON
Vin(th)
1.00
1.35
1.60
8.0
-
1.70
Input signal threshold voltage
Input Zener Voltage
V
V
OFF
1.25
1.95
Vz
Rin=20kΩ
-
1.1
-
-
-
Tc=-20°C Fig.2
Alarm Signal Hold Time
Current Limit Resistor
tALM Tc=25°C Fig.2
Tc=125°C Fig.2
2.0
-
-
ms
-
4.0
1575
RALM Alarm terminal
1425
1500
Ω
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5.3 Protection Section (Vcc=15V)
Item
Symbol
Ioc
Conditions
Tj=125°C
Min.
225
Typ.
-
Max.
-
Units
A
Over Current Protection Level
of Inverter circuit
Over Current Protection Delay time
SC Protection Delay time
tdoc
tsc
Tj=125°C
-
-
5
-
-
8
-
s
s
°C
Tj=125°C Fig.4
Surface
IGBT Chips Over Heating
Protection Temperature Level
Over Heating Protection Hysteresis
Over Heating Protection
TjOH
150
-
of IGBT Chips
TjH
-
20
-
-
°C
°C
TcOH
VDC=0V, Ic=0A
110
125
Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Case Temperature
TcH
VUV
VH
-
20
-
-
12.5
-
°C
V
11.0
0.2
0.5
6. Thermal Characteristics (Tc=25°C)
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
Typ.
Max.
0.29
0.47
-
Units
°C/W
Junction to Case
Inverter
IGBT
FWD
-
-
-
-
-
Thermal Resistance *8
Case to Fin Thermal Resistance with Compound
*8 : ( For 1device , Case is under the device )
0.05
7. Noise Immunity (Vdc=300V, Vcc=15V, Test Circuit Fig 5.)
Conditions
Item
Min.
±2.0
Typ.
-
Max.
-
Units
kV
Common mode
Pulse width 1us,polarity ±,10 minuets
Judge : no over-current, no miss operating
Rise time 1.2us,Fall time 50s Interval 20s,10 times
Judge : no over-current, no miss operating
rectangular noise
Common mode
lightning surge
±5.0
-
-
kV
8. Recommended Operating Conditions
Item
Symbol
VDC
Vcc
Min.
-
Typ.
Max.
400
16.5
3.0
Units
V
DC Bus Voltage
-
15.0
-
Power Supply Voltage of Pre-Driver
Screw Torque (M5)
13.5
2.5
V
-
Nm
9. Weight
Item
Symbol
Wt
Min.
-
Typ.
450
Max.
-
Units
g
Weight
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Ｖｉｎ（ｔｈ）
Ｏｎ
Ｖｉｎ
Ｉｃ
Ｖｉｎ（ｔｈ）
ｔｒｒ
９０％
５０％
９０％
ｔｏｎ
1０％
ｔｏff
Figure 1. Switching Time Waveform Definitions
off
off
/Vin
Vge (Inside IPM)
Fault (Inside IPM)
/ALM
on
on
Gate On
Gate Off
normal
alarm
2ms(typ.)
tALM＞Max.
tALM＞Max.
tALM
①
②
③
Fault：Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
Necessary conditions for alarm reset (refer to ① to ③ in figure2.)
① This represents the case when a failure-causing Fault lasts for a period more than tALM.
The alarm resets when the input Vin is OFF and the Fault has disappeared.
② This represents the case when the ON condition of the input Vin lasts for a period more
than tALM. The alarm resets when the Vin turns OFF under no Fault conditions.
③ This represents the case when the Fault disappears and the Vin turns OFF within tALM.
The alarm resets after lasting for a period of the specified time tALM.
off
/Vin
on
Ioc
on
Ic
alarm
tdoc
/ALM
①
②
＜tdoc
Figure 3. Over-current Protection Timing Diagram
Period ①:
When a collector current over the OC level flows and the OFF command is input within
a period less than the trip delay time tdoc, the current is hard-interrupted and no alarm
is output.
Period ②:
When a collector current over the OC level flows for a period more than the trip delay
time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs,
an alarm is output.
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tSC
Ic
Ic
Ic
IALM
IALM
IALM
Figure.4 Definition of tsc
CT
P
U
V
W
N
VccU
VinU
20k
20k
IPM
DC
15V
SW1
SW2
AC200V
GNDU
Vcc
+
DC
15V
VinX
GND
4700p
Noise
Earth
Cooling
Fin
Figure 5. Noise Test Circuit
Vcc
P
L
DC
300V
20k
IPM
DC
15V
+
Vin
HCPL-
4504
GND
N
Ic
Figure 6. Switching Characteristics Test Circuit
Icc
Vcc
A
P
U
V
W
N
IPM
DC
15V
Vin
GND
P.G
+8V
fsw
Figure 7. Icc Test Circuit
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10. Truth table
10.1 IGBT Control
The following table shows the IGBT ON/OFF status with respect to the input signal Vin.
The IGBT turn-on when Vin is at “Low” level under no alarm condition.
Input
(Vin)
Output
(IGBT)
Low
High
ON
OFF
10.2 Fault Detection
(1) When a fault is detected at the high side, only the detected arm stops its output.
At that time the IPM dosen’t any alarm.
(2) When a fault is detected at the low side, all the lower arms stop their outputs and the IPM
outputs an alarm of the low side.
IGBT
Alarm Output
Fault
U-phase V-phase W-phase Low side ALM-U ALM-V ALM-W
ALM
H
OC
UV
OFF
*
*
*
*
*
*
L
L
H
H
H
L
H
H
H
H
H
H
L
High side U-
phase
OFF
H
TjOH
OC
OFF
*
*
*
*
L
H
OFF
OFF
OFF
*
*
*
H
H
H
H
H
H
H
H
H
H
High side V-
phase
UV
*
*
*
L
H
TjOH
OC
*
*
*
L
H
*
OFF
OFF
OFF
*
*
H
H
H
H
H
H
H
High side W-
phase
UV
*
*
*
L
H
TjOH
OC
*
*
*
L
H
*
*
OFF
OFF
OFF
H
H
H
L
Low side
UV
*
*
*
L
TjOH
*
*
*
L
Case
TcOH
*
*
*
OFF
H
H
H
L
Temperature
*：Depend on input logic.
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11. Cautions for design and application
1. Trace routing layout should be designed with particular attention to least stray capacity
between the primary and secondary sides of optical isolators by minimizing the wiring
length between the optical isolators and the IPM input terminals as possible.
フォトカプラとＩＰＭの入力端子間の配線は極力短くし、フォトカプラの一次側と二次側の浮遊容量を小さくした
パターンレイアウトにして下さい。
2. Mount a capacitor between Vcc and GND of each high-speed optical isolator as close to
as possible.
高速フォトカプラのVcc-GND間に、コンデンサを出来るだけ近接して取り付けて下さい。
3. For the high-speed optical isolator, use high-CMR type one with tpHL, tpLH ≦ 0.8µs.
高速フォトカプラは、tpHL,tpLH≦0.8us、高CMRタイプをご使用ください。
4. For the alarm output circuit, use low-speed type optical isolators with CTR ≧ 100%.
アラーム出力回路は、低速フォトカプラCTR≧100%のタイプをご使用ください。
5. For the control power Vcc, use four power supplies isolated each. And they should be
designed to reduce the voltage variations.
制御電源Vccは、絶縁された４電源を使用してください。また、電圧変動を抑えた設計として下さい。
6. Suppress surge voltages as possible by reducing the inductance between the DC bus P
and N, and connecting some capacitors between the P and N terminals.
P-N間の直流母線は出来るだけ低インダクタンス化し、P-N端子間にコンデンサを接続するなどしてサージ
電圧を低減して下さい。
7. To prevent noise intrusion from the AC lines, connect a capacitor of some 4700pF between
the three-phase lines each and the ground.
ACラインからのノイズ侵入を防ぐために、３相各線－アース間に４７００ｐＦ程のコンデンサを接続して下さい。
8. At the external circuit, never connect the control terminal ①GNDU to the main terminal
U-phase, ⑤GNDV to V-phase, ⑨GNDW to W-phase, and ⑬GND to N-phase. Otherwise,
malfunctions may be caused.
制御端子①ＧＮＤＵと主端子Ｕ相、制御端子⑤ＧＮＤVと主端子V相、制御端子⑨ＧＮＤWと主端子W相、
制御端子⑬ＧＮＤと主端子Nを外部回路で接続しないで下さい。誤動作の原因になります。
9. Take note that an optical isolator’s response to the primary input signal becomes slow
if a capacitor is connected between the input terminal and GND.
入力端子-GND間にコンデンサを接続すると、フォトカプラ一次側入力信号に対する応答時間が長くなります
のでご注意ください。
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10. Taking the used isolator’s CTR into account, design with a sufficient allowance to decide
the primary forward current of the optical isolator.
フォトカプラの一次側電流は、お使いのフォトカプラのCTRを考慮し十分に余裕をもった設計にして下さい。
11. Apply thermal compound to the surfaces between the IPM and its heat sink to reduce
the thermal contact resistance.
接触熱抵抗を小さくするために、ＩＰＭとヒートシンクの間にサーマルコンパウンドを塗布して下さい。
12. Finish the heat sink surface within roughness of 10µm and flatness (camber) between screw
positions of 0 to +100µm. If the flatness is minus, the heat radiation becomes worse due to
a gap between the heat sink and the IPM. And, if the flatness is over +100µm, there is a danger
that the IPM copper base may be deformed and this may cause a dielectric breakdown.
ヒートシンク表面の仕上げは、粗さ10um以下、ネジ位置間
+100μm
0
での平坦度（反り）は、0～100umとして下さい。平坦度がマ
イナスの場合、ヒートシンクとIPMの間に隙間ができ放熱が
Heat sink
悪化します。また、平坦度が＋100um以上の場合ＩＰＭの銅
Mounting holes
ﾍﾞｰｽが変形し絶縁破壊を起こす危険性があります。
13. This product is designed on the assumption that it applies to an inverter use. Sufficient
examination is required when applying to a converter use. Please contact Fuji Electric Co.,Ltd
if you would like to applying to converter use.
本製品は、インバータ用途への適用を前提に設計されております。コンバータ用途へ適用される場合は、
十分な検討が必要です。もし、コンバータへ適用される場合は御連絡ください。
14. Please see the 『Fuji IGBT-IPM R SERIES APPLICATION MANUAL』 and 『Fuji IGBT
MODULES N SERIES APPLICATION MANUAL』.
『富士IGBT-IPM Rシリーズ アプリケーションマニュアル』及び『IGBTﾓｼﾞｭｰﾙ Nシリーズ アプリケーション
マニュアル』を御参照ください。
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12. Example of applied circuit 応用回路例
2 0
k
Ω
P
A
C 2 0 0
④
10 u F
+
I F
0 . 1 u F
③
V c
c
U
V
W
①
+
5
V
1 k
Ｍ
②
⑧
2 0
k Ω
+
B
N
I F
10 u F
0 . 1 u F
⑦
V c
c
⑤
5
V
1 k
⑥
⑫
2 0 k
Ω
+
I F
10 u F
0 . 1 u F
⑪
V c
c
⑨
5
V
1 k
I P M
⑩
⑭
V c
c
⑬
10 u F
⑯
IF
2
0 k Ω
0 . 1 u F
2 0 kΩ
0 . 1 u F
IF
IF
10 u F
⑰
2 0 kΩ
0 . 1 u F
10 u F
⑱
⑮
⑲
5
V
1 k
The alarm signal should be connected to Vcc when it it is not used.
不使用のアラーム端子は、 制御電源Vccに接続して下さい。
13. Package and Marking 梱包仕様
Please see the MT6M4140 which is packing specification of P610 & P611 & P621 package．
Ｐ６１０，６１１，６２１ 梱包仕様書 ＭＴ６Ｍ４１４０を御参照ください。
14. Cautions for storage and transportation 保管、運搬上の注意
・ Store the modules at the normal temperature and humidity (5 to 35°C, 45 to 75%).
常温常湿(5～35℃、45～75%)で保存して下さい。
・ Avoid a sudden change in ambient temperature to prevent condensation on the module
surfaces.
モジュールの表面が結露しないよう、急激な温度変化を避けて下さい。
・ Avoid places where corrosive gas generates or much dust exists.
腐食性ガスの発生場所、粉塵の多い場所は避けて下さい。
・ Store the module terminals under unprocessed conditions
モジュールの端子は未加工の状態で保管すること。.
・ Avoid physical shock or falls during the transportation.
運搬時に衝撃を与えたり落下させないで下さい。
15. Scope of application 適用範囲
This specification is applied to the IGBT-IPM (type: 6MBP150RTJ060).
本仕様書は、IGBT-IPM (型式：6MBP150RTJ060)に適用する。
16. Based safety standards 準拠安全規格
UL1557
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17.Characteristics
17-1.Control Circuit Characteristics(Respresentative)
Power supply current vs. Switching frequency
Input signal threshold voltage
vs. Power supply voltage
Tj=25°C
Tc=125°C
Tj=125°C
70
2.5
2
P-side
60
50
40
30
20
10
0
N-side
Vcc=17V
} Vin(off)
} Vin(on)
Vcc=15V
Vcc=13V
1.5
1
Vcc=17V
Vcc=15V
Vcc=13V
0.5
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Switching frequency : fsw (kHz)
Under voltage hysterisis vs. Jnction temperature
Under voltage vs. Junction temperature
14
12
10
1
0.8
0.6
0.4
0.2
0
8
6
4
2
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Junction temperature : Tj (°C)
Junction temperature : Tj (°C)
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
Alarm hold time vs. Power supply voltage
3
200
150
100
50
TjOH
TcOH
2.5
2
Tc=100°C
Tc=25°C
1.5
1
0.5
0
TcH,TjH
0
12
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Power supply voltage : Vcc (V)
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17-2.Main Circuit Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C(Chip)
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
240
240
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
Vcc=13V
200
200
Vcc=13V
160
120
80
160
120
80
40
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Chip)
240
240
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
200
160
120
80
Vcc=13V
200
Vcc=13V
160
120
80
40
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Forward current vs. Forward voltage
(Chip)
Forward current vs. Forward voltage
(Terminal)
300
250
200
150
100
50
300
250
200
150
100
50
125°C
25°C
125°C
25°C
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
Forward voltage : Vf (V)
Forward voltage : Vf (V)
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Switching Loss vs. Collector Current
Edc=300V,Vcc=15V,Tj=25°C
Switching Loss vs. Collector Current
Edc=300V,Vcc=15V,Tj=125°C
16
14
12
10
8
25
20
15
10
5
Eon
Eon
6
Eoff
Err
Eoff
Err
4
2
0
0
0
60
120
180
240
0
60
120
180
240
Collector current : Ic (A)
Collector current : Ic (A)
Reversed biased safe operating area
Vcc=15V,Tj 125°C
Transient thermal resistance
400
300
200
100
0
1
FWD
IGBT
0.1
RBSOA(Repetitive pulse)
0.01
0.001
0.01
0.1
1
0
100 200 300 400 500 600 700
Collector-Emitter voltage : Vce (V)
Pulse width :Pw (sec)
Power derating for IGBT
(per device)
Power derating for FW D
(per device)
500
400
300
300
250
200
150
100
50
200
100
0
0
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Case Temperature : Tc (°C)
Case Temperature : Tc (°C)
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Switching time vs. Collector current
Edc=300V,Vcc=15V,Tj=125°C
Switching time vs. Collector current
Edc=300V,Vcc=15V,Tj=25°C
10000
1000
100
10000
1000
100
ton
toff
ton
toff
tf
tf
10
10
0
50
100
150
200
250
0
50
100
150
200
250
Collector current : Ic (A)
Collector current : Ic (A)
Reverse recovery characteristics
trr,Irr vs.IF
trr125°C
trr25°C
100
10
1
Irr125°C
Irr25°C
0
50
100
150
200
250
Forward current:IF(A)
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18. Reliability Test Items
Reference
norms
EIAJ
Test
cate-
gories
Accept-
ance
number
Number
of sample
Test items
Test methods and conditions
ED-4701
Test Method 401
1 Terminal strength Pull force
: 40 N (main terminal)
10 N (control terminal)
: 10 ±1 sec.
5
( 1 : 0 )
MethodⅠ
端子強度
(Pull test)
Test time
2 Mounting Strength Screw torque
: 2.5 ~ 3.5 N･m (M5)
: 10 ±1 sec.
Test Method 402
5
5
( 1 : 0 )
( 1 : 0 )
Test time
method
Ⅱ
締付け強度
3 Vibration
振動
Test Method 403
Condition code B
Range of frequency
Sweeping time
Acceleration
: 10～500 Hz
: 15 min.
100 m/s2
:
Sweeping direction
Test time
: Each X,Y,Z axis
: 6 hr. (2hr./direction)
5000 m/s2
1.0 ms
Test Method 404
Condition code B
4 Shock
Maximum acceleration :
Pulse width
5
5
( 1 : 0 )
( 1 : 0 )
衝撃
Direction
: Each X,Y,Z axis
: 3 times/direction
Test time
5 Solderabitlity
Solder temp.
: 235 ±5 ℃
: 5.0 ±0.5 sec.
: 1 time
Test Method 303
Condition code A
はんだ付け性
Immersion duration
Test time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
6 Resistance to
soldering heat
はんだ耐熱性
Solder temp.
Immersion time
Test time
: 260 ±5 ℃
: 10 ±1sec.
: 1 time
5
( 1 : 0 )
Test Method 302
Condition code A
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Test Method 201
Test Method 202
1 High temperature Storage temp.
: 125 ±5 ℃
: 1000 hr.
: -40 ±5 ℃
: 1000 hr.
: 85 ±2 ℃
: 85 ±5%
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
storage 高温保存 Test duration
2 Low temperature
storage 低温保存 Test duration
3 Temperature Storage temp.
humidity storage Relative humidity
Storage temp.
Test Method 103
Test code C
Test duration
Test temp.
: 1000hr.
高温高湿保存
4 Unsaturated
Test Method 103
Test code E
: 120 ±2 ℃
5
5
( 1 : 0 )
( 1 : 0 )
1.7x105 Pa
pressure cooker
プレッシャークッカー
Atmospheric pressure
Test humidity
Test duration
Test temp.
:
: 85 ±5%
: 96 hr.
5 Temperature
cycle
:
Test Method 105
Minimum storage temp. -40 ±5℃
Maximum storage temp. 125 ±5℃
Normal temp.
5 ~ 35℃
温度サイクル
Dwell time
: Tmin ~ TN ~ Tmax ~ TN
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
Number of cycles
Test temp.
Test Method 307
6 Thermal shock
熱衝撃
5
( 1 : 0 )
+0
High temp. side 100 -5
℃
Ⅰ
:
method
Condition code A
+5
Low temp. side 0 -0
℃
Fluid used
: Pure water (running water)
: 5 min. par each temp.
: 10 sec.
Dipping time
Transfer time
Number of cycles
: 10 cycles
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Reference
norms
EIAJ
Test
cate-
gories
Accept-
ance
number
Number
of sample
Test items
Test methods and conditions
ED-4701
1 High temperature Test temp.
reverse bias
:
Test Method 101
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
Ta = 125 ±5℃
(Tj ≦150 ℃)
Bias Voltage
Bias Method
: VC = 0.8×VCES
: Applied DC voltage to C-E
Vcc = 15V
高温逆ﾊﾞｲｱｽ
Test duration
Test temp.
: 1000 hr.
Test Method 102
Condition code C
2 Temperature
humidity bias
高温高湿ﾊﾞｲｱｽ
: 85 ±2 ℃
Relative humidity
Bias Voltage
: 85 ±5 %
: VC = 0.8×VCES
Vcc = 15V
Bias Method
Test duration
ON time
: Applied DC voltage to C-E
: 1000 hr.
3 Intermitted
operating life
(Power cycle)
断続動作
: 2 sec.
Test Method 106
OFF time
: 18 sec.
Test temp.
:
Tj=100 ±5deg
Tj ≦150 ℃, Ta=25 ±5℃
Number of cycles
: 15000 cycles
19. Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Lower limit Upper limit
Unit
Note
Electrical
Leakage current
ICES
VCE(sat)
VF
-
-
-
-
-
USL×2
USL×1.2
USL×1.2
mA
V
characteristic Saturation voltage
Forward voltage
V
Thermal
IGBT
Ｒth(j-c)
Ｒth(j-c)
Ioc
USL×1.2 ℃/W
USL×1.2 ℃/W
resistance FWD
Over Current Protection
Alarm signal hold time
Over heating Protection
Isolation voltage
Visual inspection
Peeling
LSL×0.8 USL×1.2
LSL×0.8 USL×1.2 ms
Ａ
tALM
TcOH
Viso
LSL×0.8 USL×1.2
Broken insulation
℃
-
Visual
inspection
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note :
Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
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Warnings
1. This product shall be used within its absolute maximum rating (voltage, current, and temperature).
This product may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が
破壊する場合があります。
2. Connect adequate fuse or protector of circuit between three-phase line and this product to prevent
the equipment from causing secondary destruction.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを
必ず付けて２次破壊を防いでください。
3. When studying the device at a normal turn-off action, make sure that working paths of the turn-off
voltage and current are within the RBSOA specification. And ,when studying the device duty at
a short-circuit current non-repetitive interruption, make sure that the paths are also within the
avalanche proof(PAV) specification which is calculated from the snubber inductance, the IPM
inner inductance and the turn-off current. In case of use of IGBT-IPM over these specifications,
it might be possible to be broken.
通常のターンオフ動作における素子責務の検討の際には、ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にある
ことを確認して下さい。また、非繰返しの短絡電流遮断における素子責務の検討に際しては、スナバーインダクタンスと
ＩＰＭ内部インダクタンス及びターンオフ電流から算出されるアバランシェ耐量(PAV)仕様内である事を確認して下さい。
これらの仕様を越えて使用すると、素子が破壊する場合があります。
4. Use this product after realizing enough working on environment and considering of product's reliability
life. This product may be broken before target life of the system in case of using beyond the product's
reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性
寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
5. If the product had been used in the environment with acid, organic matter, and corrosive gas
(For example : hydrogen sulfide, sulfurous acid gas), the product's performance and appearance
can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は
致しかねます。
6. The thermal stress generated from rise and fall of Tj restricts the product lifetime.
You should estimate the ΔTj from power losses and thermal resistance, and design the inverter lifetime
within the number of cycles provided from the power cycle curve. (Technical Rep. No.: MT6M4057)
製品の寿命は、接合温度の上昇と下降によって起こる熱ストレスで決まります。損失と熱抵抗からΔTjを推定し、パワー
サイクル寿命カーブで決まるサイクル数以下で、インバータの寿命を設計して下さい(技術資料№：MT6M4057)。
7. Never add mechanical stress to deform the main or control terminal.
The deformed terminal may cause poor contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合が
あります。
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8. Never add mechanical stress to deform the main or control terminal.
The deformed terminal may cause poor contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。 端子の変形により、接触不良などを引き起こす場合が
あります。
9. If excessive static electricity is applied to the control terminals, the devices can be broken.
Implement some countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を
実施して下さい。
Caution
1. Fuji Electric is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents
causing injury or death, damage to property like by fire, and other social damage resulted from
a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep
safety such as redundant design, spread-fire-preventive design, and malfunction-protective design.
富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、誤動作する
場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災等による財産に対する
損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保のための手段を
講じて下さい。
2. The application examples described in this specification only explain typical ones that used the Fuji
Electric products. This specification never ensure to enforce the industrial property and other rights,
nor license the enforcement rights.
本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書に
よって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
3. The product described in this specification is not designed nor made for being applied to the equipment
or systems used under life-threatening situations. When you consider applying the product of this
specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace
equipment, medical devices, atomic control systems and submarine relaying equipment or systems,
please apply after confirmation of this product to be satisfied about system construction and required
reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Co., Ltd.
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相关型号：
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