6MBP150RA120 [FUJI]
IGBT-IPM(1200V/150A);
| 型号： | 6MBP150RA120 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT-IPM(1200V/150A) 运动控制电子器件 信号电路 电动机控制 双极性晶体管 |
| 文件： | 总7页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6MBP150RA120
IGBT-IPM R series
1200V / 150A 6 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Rating
Unit
Item
Min.
Max.
V
DC bus voltage
VDC
0
900
1000
800
1200
150
300
150
1040
150
20
V
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
VDC(surge)
VSC
0
V
200
V
VCES
IC
0
A
DC
-
A
1ms
DC
ICP
-
A
-IC
-
W
°C
V
Collector power dissipation One transistor
Junction temperature
PC
-
Tj
-
0
Input voltage of power supply for Pre-Driver
Input signal voltage
VCC *1
Vin *2
Iin
V
0
Vz
mA
V
Input signal current
-
1
Alarm signal voltage
VALM *3
IALM *4
Tstg
0
Vcc
15
mA
°C
°C
kV
N·m
N·m
Alarm signal current
-
Storage temperature
-40
-20
-
125
100
AC2.5
3.5 *6
3.5 *6
Fig.1 Measurement of case temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Top
Viso *5
Screw torque
Mounting (M5)
Terminal (M5)
-
-
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
Symbol
Condition
VCE=1200V input terminal open
Min.
Typ.
Max.
1.0
Unit
mA
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
–
–
–
–
–
–
ICES
Ic=150A
-Ic=150A
2.6
3.0
V
V
VCE(sat)
VF
6MBP150RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Symbol Condition
Min.
3
Typ.
Max.
18
Unit
mA
mA
V
fsw=0 to 15kHz Tc=-20 to 100°C *7
Iccp
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
-
-
fsw=0 to 15kHz Tc=-20 to 100°C *7
ICCN
Vin(th)
10
65
ON
1.00
1.70
1.35
1.70
OFF
V
2.05
8.0
2.40
Rin=20k ohm
V
VZ
Input zener voltage
-
-
VDC=0V, Ic=0A, Case temperature, Fig.1
°C
°C
°C
°C
A
TCOH
TCH
TjOH
TjH
Over heating protection temperature level
Hysteresis
110
-
125
-
150
-
20
-
-
-
-
-
surface of IGBT chips
IGBT chips over heating protection temperature level
Hysteresis
-
20
Tj=125°C
IOC
Collector current protection level
Over current protection delay time
Under voltage protection level
Hysteresis
INV
225
-
-
Tj=25°C Fig.2
µs
V
tDOC
VUV
VH
10
11.0
-
12.5
V
0.2
1.5
-
-
-
ms
µs
ohm
tALM
tSC
Alarm signal hold time
2
-
Tj=25°C Fig.3
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM
-
12
RALM
1425
1500
1575
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Symbol Condition
Min.
Typ.
Max.
Unit
µs
Switching time (IGBT)
Switching time (FWD)
ton
toff
trr
IC=150A, VDC=600V
0.3
-
-
-
-
-
-
3.6
µs
IF=150A, VDC=600V
0.4
µs
Thermal characteristics(Tc=25°C)
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
Max.
0.12
Unit
Junction to Case thermal resistance
INV
IGBT
FWD
-
-
°C/W
°C/W
°C/W
0.29
-
Case to fin thermal resistance with compound
0.05
Recommendable value
Item
Symbol
Min.
200
13.5
Typ.
Max.
800
16.5
20
Unit
V
DC bus voltage
VDC
VCC
fSW
-
-
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
15
-
V
1
kHz
N·m
N·m
Screw torque
Mounting (M5)
Terminal (M5)
2.5
2.5
-
3.0
-
-
3.0
6MBP150RA120
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 920g
6MBP150RA120
IGBT-IPM
Characteristics (Representative)
Control Circuit
Input signal threshold voltage
vs. Power supply voltage
Power supply current vs. Switching frequency
Tj=100°C
Tj=25°C
Tj=125°C
80
2.5
2
Vcc=17V
P-side
70
N-side
Vcc=15V
Vcc=13V
60
50
40
30
20
10
0
}
}
Vin(off)
Vin(on)
1.5
1
Vcc=17V
Vcc=15V
Vcc=13V
0.5
0
12
13
14
15
16
17
18
0
5
10
15
20
25
Power supply voltage : Vcc (V)
Switching frequency : fsw (kHz)
Under voltage vs. Junction temperature
Under voltage hysterisis vs. Jnction tem perature
14
12
10
8
1
0.8
0.6
0.4
0.2
0
6
4
2
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Junction temperature : Tj (°C)
Junction tem perature : Tj (°C)
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
Alarm hold time vs. Power supply voltage
200
150
100
50
3
TjOH
2.5
2
Tj=125°C
Tj=25°C
TcOH
1.5
1
0.5
0
TcH,TjH
0
12
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
P ow er s upply voltage : V cc (V)
6MBP150RA120
IGBT-IPM
Inverter
Collector current vs. Collector-Em itter voltage
Tj=25°C
Collector current vs. Collector-Em itter voltage
Tj=125°C
250
200
150
100
50
250
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
200
150
100
50
Vcc=13V
Vcc=13V
0
0
0.5
1
1.5
2
2.5
3
3.5
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Switching tim e vs. Collector current
Edc=600V,Vcc=15V,Tj=25°C
Switching tim e vs. Collector current
Edc=600V,Vcc=15V,Tj=125°C
10000
1000
100
10000
1000
100
toff
ton
toff
ton
tf
tf
10
10
0
50
100
150
200
250
0
50
100
150
200
250
Collector current : Ic (A)
Collector current : Ic (A)
Reverse recovery characteristics
trr,Irr vs. IF
trr125°C
Forward current vs. Forward voltage
125°C
250
200
150
100
50
25°C
100
trr25°C
Irr125°C
Irr25°C
10
0
0
0.5
1
1.5
2
2.5
3
0
50
100
150
200
250
Forward current : IF(A)
Forward voltage : Vf (V)
6MBP150RA120
IGBT-IPM
Reversed biased safe operating area
<
Transient therm al resistance
Vcc=15V,Tj 125°C
=
1
2100
1800
1500
1200
900
600
300
0
FW D
IGBT
0.1
SCSO A
(non-repetitive pulse)
0.01
RBSO A
(Repetitive pulse)
0.001
0.001
0.01
0.1
1
0
200
400
600
800 1000 1200 1400
Collector-Emitter voltage : Vce (V)
Pulse width :Pw (sec)
Power derating for IGBT
(per device)
Pow er derating for F W D
(per device)
1200
1000
800
600
400
200
0
500
400
300
200
100
0
0
20
40
60
80
100 120 140 160
0
20
40
60
80
100 120 140 160
Case Temperature : Tc (°C)
Case T emperature : Tc (°C )
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=125°C
Switching Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=25°C
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Eon
Eon
Eoff
Err
Eoff
Err
0
50
100
150
200
250
0
50
100
150
200
250
C ollector current : Ic (A)
Collector current : Ic (A)
6MBP150RA120
IGBT-IPM
O ver current protection vs. Junction tem perature
V cc=15V
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
Junction tem perature : Tj(°C)
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