AOB210L [FREESCALE]

30V N-Channel MOSFET; 30V N沟道MOSFET
AOB210L
型号: AOB210L
厂家: Freescale    Freescale
描述:

30V N-Channel MOSFET
30V N沟道MOSFET

文件: 总6页 (文件大小:575K)
中文:  中文翻译
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AOT210L/AOB210L  
30V N-Channel MOSFET  
General Description  
The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most  
losses are minimized due to an extremely low combination  
efficient high frequency switching performance. Power  
of RDS(ON) and Crss  
.
Features  
VDS  
30V  
105A  
ID (at VGS=10V)  
< 2.9m(< 2.6m)  
< 3.7m(< 3.5m)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
Continuous Drain  
Current G  
Pulsed Drain Current C  
TC=25°C  
105  
ID  
TC=100°C  
82  
A
IDM  
400  
20  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
IDSM  
A
16  
IAS, IAR  
68  
A
Avalanche energy L=0.1mH C  
EAS, EAR  
231  
176  
88  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
PD  
W
TA=25°C  
1.9  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.2  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
12  
Max  
15  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
54  
65  
Steady-State  
Steady-State  
RθJC  
0.7  
0.85  
1/6  
www.freescale.net.cn  
AOT210L/AOB210L  
30V N-Channel MOSFET  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
V
DS=30V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
V
DS=0V, VGS= ±20V  
100  
2.2  
nA  
V
VGS(th)  
ID(ON)  
VDS=VGS ID=250µA  
1
1.7  
VGS=10V, VDS=5V  
400  
A
V
GS=10V, ID=20A  
2.4  
3.7  
2.9  
4.7  
TJ=125°C  
TO220  
VGS=4.5V, ID=20A  
TO220  
3
3.7  
2.6  
3.5  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
VGS=10V, ID=20A  
TO263  
2.1  
V
GS=4.5V, ID=20A  
TO263  
2.7  
78  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
VDS=5V, ID=20A  
S
V
A
IS=1A,VGS=0V  
Maximum Body-Diode Continuous CurrentG  
0.65  
1
105  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
2800 3520 4300  
pF  
pF  
pF  
V
GS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
920  
50  
1320 1720  
90  
1
120  
1.5  
VGS=0V, VDS=0V, f=1MHz  
0.5  
SWITCHING PARAMETERS  
Qg(10V)  
Qg(4.5V)  
Qgs  
Total Gate Charge  
39  
17  
7
48  
22  
9
58  
27  
11  
10  
nC  
nC  
nC  
nC  
ns  
Total Gate Charge  
VGS=10V, VDS=15V, ID=20A  
Gate Source Charge  
Qgd  
Gate Drain Charge  
4
7
tD(on)  
tr  
tD(off)  
tf  
Turn-On DelayTime  
11  
10  
38  
11  
21  
58  
Turn-On Rise Time  
VGS=10V, VDS=20V, RL=0.75,  
ns  
RGEN=3Ω  
Turn-Off DelayTime  
ns  
Turn-Off Fall Time  
ns  
trr  
IF=20A, dI/dt=500A/µs  
IF=20A, dI/dt=500A/µs  
14  
40  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
28  
76  
ns  
Qrr  
nC  
2
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power  
A
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's  
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.  
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation  
limit for cases where additional heatsinking is used.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T  
J
=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a  
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.  
G. The maximum current rating is package limited.  
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T=25°C.  
A
2/6  
www.freescale.net.cn  
AOT210L/AOB210L  
30V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
10V  
7V  
VDS=5V  
3.5V  
3V  
125°C  
25°C  
3
Vgs=2.5V  
4
1
1.5  
2
2.5  
VGS(Volts)  
3.5  
4
0
1
2
3
5
VDS (Volts)  
Figure 2: Transfer Characteristics (Note E)  
Fig 1: On-Region Characteristics (Note E)  
8
6
4
2
0
2
1.8  
1.6  
1.4  
1.2  
1
VGS=10V  
ID=20A  
VGS=4.5V  
VGS=10V  
VGS=4.5V  
ID=20A  
0.8  
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100 125 150 175 200  
ID (A)  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
8
6
4
2
0
1.0E+02  
1.0E+01  
ID=20A  
1.0E+00  
125°C  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
25°C  
25°C  
0.0  
0.2  
0.4  
0.6  
VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.8  
1.0  
1.2  
2
4
6
8
10  
VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
3/6  
www.freescale.net.cn  
AOT210L/AOB210L  
30V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
5000  
4000  
3000  
2000  
1000  
0
VDS=20V  
ID=20A  
8
Ciss  
6
4
Coss  
2
Crss  
0
0
10  
20  
Qg (nC)  
30  
40  
50  
0
5
10  
15  
VDS (Volts)  
20  
25  
30  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
600  
500  
400  
300  
200  
100  
1000.0  
10µs  
100.0 RDS(ON)  
limited  
TJ(Max)=175°C  
TC=25°C  
100µs  
1ms  
10ms  
10.0  
DC  
1.0  
TJ(Max)=175°C  
TC=25°C  
0.1  
0.0  
0.01  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS (Volts)  
Pulse Width (s)  
Figure 10: Single Pulse Power Rating Junction-to-  
Case (Note F)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note F)  
10  
1
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
D=Ton/T  
TJ,PK=TC+PDM.ZθJC.RθJC  
RθJC=0.85°C/W  
PD  
0.1  
Ton  
T
Single Pulse  
0.0001  
0.01  
0.00001  
0.001  
0.01  
0.1  
1
10  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  
4/6  
www.freescale.net.cn  
AOT210L/AOB210L  
30V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
1000  
100  
10  
200  
160  
120  
80  
TA=25°C  
TA=100°C  
TA=150°C  
40  
TA=125°C  
0
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
175  
Time in avalanche, tA (µs)  
T
CASE (°C)  
Figure 12: Single Pulse Avalanche capability (Note  
C)  
Figure 13: Power De-rating (Note F)  
120  
90  
60  
30  
0
1000  
100  
10  
TA=25°C  
1
0
25  
50  
75  
TCASE (°C)  
Figure 14: Current De-rating (Note F)  
100  
125  
150  
175  
0.001  
0.1  
10  
Pulse Width (s)  
1000  
Figure 15: Single Pulse Power Rating Junction-to-  
Ambient (Note H)  
10  
1
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
D=Ton/T  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=65°C/W  
0.1  
PD  
0.01  
Single Pulse  
Ton  
T
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)  
5/6  
www.freescale.net.cn  
AOT210L/AOB210L  
30V N-Channel MOSFET  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
EAR= 1/2 LIA2R  
BVDSS  
Vds  
Id  
Vgs  
Vds  
+
Vgs  
Vdd  
I AR  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Q rr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
6/6  
www.freescale.net.cn  

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