AOB210L [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AOB210L |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：575K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT210L/AOB210L
30V N-Channel MOSFET
General Description
The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most
losses are minimized due to an extremely low combination
efficient high frequency switching performance. Power
of RDS(ON) and Crss
.
Features
VDS
30V
105A
ID (at VGS=10V)
< 2.9mΩ (< 2.6mΩ∗)
< 3.7mΩ (< 3.5mΩ∗)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
Continuous Drain
Current G
Pulsed Drain Current C
TC=25°C
105
ID
TC=100°C
82
A
IDM
400
20
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
IDSM
A
16
IAS, IAR
68
A
Avalanche energy L=0.1mH C
EAS, EAR
231
176
88
mJ
TC=25°C
Power Dissipation B
TC=100°C
PD
W
TA=25°C
1.9
PDSM
W
Power Dissipation A
TA=70°C
1.2
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
54
65
Steady-State
Steady-State
RθJC
0.7
0.85
1/6
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AOT210L/AOB210L
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
2.2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.7
VGS=10V, VDS=5V
400
A
V
GS=10V, ID=20A
2.4
3.7
2.9
4.7
TJ=125°C
TO220
VGS=4.5V, ID=20A
TO220
3
3.7
2.6
3.5
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS=10V, ID=20A
TO263
2.1
V
GS=4.5V, ID=20A
TO263
2.7
78
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=20A
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.65
1
105
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2800 3520 4300
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
920
50
1320 1720
90
1
120
1.5
VGS=0V, VDS=0V, f=1MHz
0.5
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
39
17
7
48
22
9
58
27
11
10
nC
nC
nC
nC
ns
Total Gate Charge
VGS=10V, VDS=15V, ID=20A
Gate Source Charge
Qgd
Gate Drain Charge
4
7
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
11
10
38
11
21
58
Turn-On Rise Time
VGS=10V, VDS=20V, RL=0.75Ω,
ns
RGEN=3Ω
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
14
40
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
28
76
ns
Qrr
nC
2
A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power
A
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T=25°C.
A
2/6
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AOT210L/AOB210L
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
7V
VDS=5V
3.5V
3V
125°C
25°C
3
Vgs=2.5V
4
1
1.5
2
2.5
VGS(Volts)
3.5
4
0
1
2
3
5
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
8
6
4
2
0
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=20A
0.8
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175 200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
6
4
2
0
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
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AOT210L/AOB210L
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
4000
3000
2000
1000
0
VDS=20V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
10
20
Qg (nC)
30
40
50
0
5
10
15
VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
600
500
400
300
200
100
1000.0
10µs
100.0 RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100µs
1ms
10ms
10.0
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.85°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOT210L/AOB210L
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
200
160
120
80
TA=25°C
TA=100°C
TA=150°C
40
TA=125°C
0
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
120
90
60
30
0
1000
100
10
TA=25°C
1
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
0.001
0.1
10
Pulse Width (s)
1000
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOT210L/AOB210L
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
6/6
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