AOB260L [AOS]
60V N-Channel MOSFET; 60V N沟道MOSFET型号: | AOB260L |
厂家: | ALPHA & OMEGA SEMICONDUCTORS |
描述: | 60V N-Channel MOSFET |
文件: | 总6页 (文件大小:297K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AOT260L/AOB260L
60V N-Channel MOSFET
General Description
Product Summary
The AOT(B)260L uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
60V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =6V)
140A
< 2.5mΩ
< 2.9mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
Bottom View
D
D
D
D
D
G
S
G
S
D
D
G
G
S
S
G
S
AOT260L
AOB260L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
60
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TC=25°C
140
Continuous Drain
Current G
ID
TC=100°C
110
A
A
Pulsed Drain Current C
IDM
500
20
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
16
IAS, IAR
128
A
EAS, EAR
819
mJ
TC=25°C
Power Dissipation B
TC=100°C
330
PD
W
165
TA=25°C
1.9
PDSM
W
°C
Power Dissipation A
1.2
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
54
65
RθJC
0.35
0.45
Rev 1 : Jul 2011
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Page 1 of 6
AOT260L/AOB260L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
60
V
VDS=60V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3.2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220
2.2
2.7
500
A
2
2.5
3.9
mΩ
TJ=125°C
3.1
VGS=6V, ID=20A
TO220
2.2
1.7
2.9
2.2
2.5
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO263
VGS=6V, ID=20A
TO263
1.9
68
mΩ
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.65
1
V
A
140
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
9400 11800 14200
pF
pF
pF
Ω
V
GS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1090 1360
1770
68
32
40
1
VGS=0V, VDS=0V, f=1MHz
0.5
1.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
120
28
9
150
40
15
30
27
74
12
180
52
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=30V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
25
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
22
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
32
200
42
260
ns
nC
Qrr
140
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Jul 2011
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Page 2 of 6
AOT260L/AOB260L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
6V
VDS=5V
4V
25°C
125°C
Vgs=3.5V
4
2
2.5
3
3.5
VGS(Volts)
4
4.5
5
0
1
2
3
5
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
6
4
2
0
2.2
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
VGS=6V
VGS=6V
ID=20A
VGS=10V
0.8
0
5
10
15
D (A)
20
25
30
0
25
50
75
100 125 150 175 200
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
5
4
3
2
1
0
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1 : Jul 2011
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Page 3 of 6
AOT260L/AOB260L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15000
Ciss
VDS=30V
ID=20A
8
12000
9000
6000
3000
0
6
4
Coss
2
Crss
0
0
40
80
g (nC)
120
160
0
5
10
15
VDS (Volts)
20
25
30
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
900
800
700
600
500
400
300
200
1000.0
100.0
10.0
1.0
10µs
100µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : Jul 2011
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Page 4 of 6
AOT260L/AOB260L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
400
300
TA=25°C
TA=100°C
100
200
100
0
TA=150°C
TA=125°C
10
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
T
CASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
150
1000
100
10
TA=25°C
120
90
60
30
0
1
0
25
50
75
TCASE (°C)
100
125
150
175
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
1
0.1
PD
0.01
Single Pulse
1
Ton
T
0.001
0.01
0.1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : Jul 2011
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Page 5 of 6
AOT260L/AOB260L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 1 : Jul 2011
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Page 6 of 6
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