AOB262L [AOS]
60V N-Channel MOSFET; 60V N沟道MOSFET
| 型号： | AOB262L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT262L/AOB262L
60V N-Channel MOSFET
General Description
Product Summary
VDS
The AOT262L/AOB262L combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON).This device is ideal for
boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
60V
140A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 6V)
< 3.0mΩ (< 2.8mΩ∗)
< 3.2mΩ (< 3.0mΩ∗)
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
Bottom View
D
D
D
D
D
G
S
S
G
G
S
D
D
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
60
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
Continuous Drain
Current G
Pulsed Drain Current C
TC=25°C
140
ID
TC=100°C
110
A
A
IDM
500
20
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
IDSM
16
IAS, IAR
115
A
Avalanche energy L=0.1mH C
EAS, EAR
661
mJ
TC=25°C
Power Dissipation B
TC=100°C
333
PD
W
167
TA=25°C
2.1
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
48
60
Steady-State
Steady-State
RθJC
0.35
0.45
* Surface mount package TO263
Rev0 : Nov 2010
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Page 1 of 6
AOT262L/AOB262L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
VDS=60V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS= ±20V
DS=VGS ID=250µA
GS=10V, VDS=5V
GS=10V, ID=20A
100
3.2
nA
V
VGS(th)
ID(ON)
2.2
2.7
500
A
2.2
3.6
3
TJ=125°C
TO220
GS=6V, ID=20A
TO220
GS=10V, ID=20A
TO263
GS=6V, ID=20A
V
2.5
2
3.2
2.8
3
RDS(ON)
Static Drain-Source On-Resistance
mΩ
V
V
TO263
2.3
80
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous CurrentG
VDS=5V, ID=20A
S
V
A
IS=1A,VGS=0V
0.65
1
140
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
6500
830
25
8140
1040
32
9800
1350
55
pF
pF
pF
Ω
V
GS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.5
1
1.5
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
75
95
30
5
115
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=30V, ID=20A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
27
22
47
8
Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
tD(off)
tf
Turn-Off DelayTime
Turn-Off Fall Time
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
21
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
30
185
39
ns
Qrr
130
nC
240
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : Nov 2010
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Page 2 of 6
AOT262L/AOB262L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
6V
VDS=5V
4.5V
4V
125°C
25°C
Vgs=3.5V
1
2
3
VGS(Volts)
4
5
6
0
1
2
3
4
5
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
6
4
2
0
2.2
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
VGS=6V
ID=20A
0.8
0
5
10
15
20
25
30
0
25
50
75
100 125 150 175 200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
6
4
2
0
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0 : Nov 2010
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Page 3 of 6
AOT262L/AOB262L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
VDS=30V
ID=20A
8
8000
6000
4000
2000
0
Ciss
6
4
Coss
2
Crss
0
0
10 20 30 40 50 60 70 80 90 100
0
10
20
30
VDS (Volts)
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
600
500
400
300
200
1000.0
100.0
10.0
1.0
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0 : Nov 2010
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Page 4 of 6
AOT262L/AOB262L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
400
300
200
100
0
TA=25°C
TA=100°C
100
TA=150°C
TA=125°C
10
1
10
100
1000
0
25
50
75
100
125
150
175
Time in avalanche, tA (µs)
TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note
C)
Figure 13: Power De-rating (Note F)
150
120
90
60
30
0
1000
100
10
TA=25°C
1
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note F)
100
125
150
175
0.001
0.1
10
Pulse Width (s)
1000
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Ton
Single Pulse
1
T
0.001
0.01
0.1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0 : Nov 2010
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Page 5 of 6
AOT262L/AOB262L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev0 : Nov 2010
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Page 6 of 6
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