AOB270AL [AOS]
75V N-Channel MOSFET; 75V N沟道MOSFET
| 型号： | AOB270AL |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 75V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT270AL/AOB270AL
75V N-Channel MOSFET
General Description
Product Summary
VDS
75V
The AOT270AL/AOB270AL uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
140A
< 2.6mΩ (< 2.4mΩ )
< 3.2mΩ (< 3.0mΩ )
100% UIS Tested
100% Rg Tested
TO-263
TO220
Top View
Bottom
D
Top View
Bottom View
D
D
D
D
G
S
G
D
D
G
S
S
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
75
V
Gate-Source Voltage
VGS
±20
140
V
A
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
110
Pulsed Drain Current C
IDM
560
TA=25°C
TA=70°C
21.5
17
Continuous Drain
Current
IDSM
A
Avalanche Current C
IAS
120
A
Avalanche energy L=0.1mH C
EAS
720
mJ
TC=25°C
Power Dissipation B
TC=100°C
500
PD
W
250
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
15
60
RθJA
Steady-State
Steady-State
50
RθJC
0.25
0.3
* Surface mount package TO263
Rev 0 : Dec. 2012
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Page 1 of 6
AOT270AL/AOB270AL
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
75
V
VDS=75V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3.3
nA
V
VGS(th)
ID(ON)
2.2
2.7
560
A
2.15
3.25
2.6
4
TJ=125°C
TJ=125°C
VGS=6V, ID=20A
2.55
3.2
TO220
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS=10V, ID=20A
1.95
3.0
2.4
3.8
TO263
VGS=6V, ID=20A
2.35
3.0
TO263
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
80
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.66
1
140
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
10830
1520
97
pF
pF
pF
Ω
VGS=0V, VDS=37.5V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.3
0.75
1.2
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
147
38.5
30
206
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=37.5V, ID=20A
30
VGS=10V, VDS=37.5V, RL=1.9Ω,
RGEN=3Ω
20
tD(off)
tf
66
18
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
53
ns
Qrr
nC
438
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 140A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2012
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Page 2 of 6
AOT270AL/AOB270AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
VDS=5V
10V
6V
4.5V
125°C
4V
25°C
Vgs=3.5V
4
0
1
2
3
5
2
2.5
3
3.5
4
4.5
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
8
6
4
2
0
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=6V
VGS=6V
ID=20A
VGS=10V
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=20A
4
3
2
1
0
125°C
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec. 2012
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Page 3 of 6
AOT270AL/AOB270AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
12000
VDS=37.5V
ID=20A
10000
8000
6000
4000
2000
0
Ciss
8
6
Coss
4
2
Crss
0
0
30
60
Qg (nC)
90
120
150
0
25
50
Figure 8: Capacitance Characteristics
75
VDS (Volts)
Figure 7: Gate-Charge Characteristics
5000
4000
3000
2000
1000
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power RatingJunction-to-
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Case (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.3°C/W
PD
0.1
0.01
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Dec. 2012
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Page 4 of 6
AOT270AL/AOB270AL
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
600
500
TA=100°C
TA=25°C
400
100
300
200
100
0
TA=150°C
TA=125°C
10
1
10
100
1000
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
150
10000
1000
100
10
TA=25°C
120
90
60
30
0
1
0
25
50
75
TCASE (°C)
100
125
150
175
0.001
0.1
10
Pulse Width (s)
1000
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
0.01
0.001
PD
Ton
T
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Dec. 2012
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Page 5 of 6
AOT270AL/AOB270AL
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+
DUT
Vdd
Vgs
VDC
Rg
-
10%
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0 : Dec. 2012
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Page 6 of 6
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