AOB2608L [FREESCALE]
60V N-Channel MOSFET; 60V N沟道MOSFET
| 型号： | AOB2608L |
| 厂家： | 
Freescale |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT2608L/AOB2608L
60V N-Channel MOSFET
General Description
The AOT2608L/AOB2608L uses Trench MOSFET
technology that is uniquely optimized to provide the most
conduction and switching power losses are minimized
efficient high frequency switching performance. Both
due to an extremely low combination of RDS(ON), Ciss and
Coss.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
VDS
60V
ID (at VGS=10V)
72A
RDS(ON) (at VGS=10V)
< 8.0mΩ (< 7.6mΩ )
D
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
60
±20
72
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
54
A
Pulsed Drain Current C
IDM
180
11
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
8.5
IAS
50
A
EAS
125
mJ
TC=25°C
Power Dissipation B
TC=100°C
100
PD
W
50
TA=25°C
2.1
PDSM
W
°C
Power Dissipation A
1.3
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
12
Max
15
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
48
60
RθJC
1.2
1.5
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AOT2608L/AOB2608L
60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
60
V
VDS=60V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3.6
nA
V
VGS(th)
ID(ON)
VDS=VGS，ID=250µA
2.6
3.1
VGS=10V, VDS=5V
VGS=10V, ID=20A
180
A
6.6
8
mΩ
mΩ
TO220
TJ=125°C
11.4
14
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO263
6.3
7.6
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
75
S
V
A
0.72
1
72
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2995
270
10.5
0.6
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5Ω,
0.3
0.9
55
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
38.5
14
nC
nC
nC
ns
ns
ns
ns
3.5
15
10
RGEN=3Ω
tD(off)
tf
25
2.5
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
24
ns
Qrr
nC
115
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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AOT2608L/AOB2608L
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
80
60
40
20
0
100
80
60
40
20
0
10V
VDS=5V
6V
7V
5V
125°C
25°C
Vgs=4.5V
2
3
4
5
6
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
10
8
2.4
2.2
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
1
6
VGS=10V
4
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
18
15
12
9
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
6
25°C
3
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AOT2608L/AOB2608L
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3500
3000
2500
2000
1500
1000
500
VDS=30V
ID=20A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
35
40
0
10
20
30
40
50
60
VDS (Volts)
Figure 8: Capacitance Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
0.01
Single Pulse
Ton
T
1E-05
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
4/6
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AOT2608L/AOB2608L
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
120
100
80
60
40
20
0
TA=25°C
TA=100°C
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
80
70
60
50
40
30
20
10
0
1000
100
10
TA=25°C
1
0
25
50
75
TCASE (°C)
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Current De-rating (Note F)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOT2608L/AOB2608L
60V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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