AOB240L [FREESCALE]
40V N-Channel MOSFET; 40V N沟道MOSFET
| 型号： | AOB240L |
| 厂家： | 
Freescale |
| 描述： | 40V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
General Description
MOSFET technology that is uniquely optimized to provide
The AOT240L & AOB240L & AOTF240L uses Trench
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of R
DS(ON) and Crss.
Features
VDS
40V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
105A/85A
< 2.9mΩ (< 2.6mΩ )
< 3.7mΩ (< 3.5mΩ )
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT240L/AOB240L
AOTF240L
Units
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
A
TC=25°C
105
82
85
60
Continuous Drain
Current G
ID
TC=100°C
Pulsed Drain Current C
IDM
400
20
TA=25°C
TA=70°C
Continuous Drain
Current
IDSM
A
16
Avalanche Current C
IAS
68
A
Avalanche energy L=0.1mH C
EAS
231
mJ
TC=25°C
Power Dissipation B
TC=100°C
176
88
41
20
PD
W
TA=25°C
1.9
1.2
PDSM
W
°C
Power Dissipation A
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
AOT240L/AOB240L
AOTF240L
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
15
65
15
65
RθJA
Steady-State
Steady-State
RθJC
0.85
3.6
* Surface mount package TO263
1/7
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AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS，ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
TO220/TO220F
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.2
nA
V
VGS(th)
ID(ON)
1
1.7
400
A
2.4
3.7
2.9
4.7
mΩ
mΩ
mΩ
mΩ
TJ=125°C
VGS=4.5V, ID=20A
3
3.7
2.6
3.5
TO220/TO220F
VGS=10V, ID=20A
RDS(ON)
Static Drain-Source On-Resistance
2.1
2.7
TO263
VGS=4.5V, ID=20A
TO263
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
78
S
V
A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
0.65
1
105
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3510
1070
68
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
VGS=10V, VDS=20V, RL=1Ω,
0.5
1
1.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
49
22
9
72
32
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7
11
10
38
11
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
58
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
3.5V
7V
10V
VDS=5V
3V
125°C
25°C
Vgs=2.5V
4
1
1.5
2
2.5
3
3.5
4
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
8
6
4
2
0
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
VGS=4.5V
VGS=10V
VGS=4.5V
ID=20A
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
6
4
2
0
1.0E+02
1.0E+01
ID=20A
1.0E+00
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
4000
3000
2000
1000
0
VDS=20V
ID=20A
Ciss
8
6
4
Coss
2
Crss
0
0
10
20
Qg (nC)
30
40
50
0
10
20
VDS (Volts)
Figure 8: Capacitance Characteristics
30
40
Figure 7: Gate-Charge Characteristics
600
500
400
300
200
100
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.001
0.01
0.1
Pulse Width (s)
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT240L and AOB240L (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT240L and AOB240L (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.85°C/W
PD
0.1
0.01
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT240L and AOB240L (Note F)
0.1
1
10
4/7
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AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF240L
for AOTF240L (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.6°C/W
0.1
0.01
P
Single Pulse
T
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF240L (Note F)
1
10
100
1000
5/7
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AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
200
150
100
50
TA=25°C
TA=100°C
TA=150°C
TA=125°C
0
1
10
100
1000
0
25
50
75
TCASE (°C)
Figure 16: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 15: Single Pulse Avalanche capability
(Note C)
120
1000
100
10
TA=25°C
100
80
60
40
20
0
1
0
25
50
75
100
125
150
175
0.00001
0.001
0.1
10
1000
TCASE (°C)
Pulse Width (s)
Figure 17: Current De-rating (Note F)
Figure 18: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
1
Ton
T
0.001
0.01
0.1
10
100
1000
Pulse Width (s)
Figure 19: Normalized Maximum Transient Thermal Impedance (Note H)
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AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
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