AO4916L [FREESCALE]
N-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode; N沟道增强型场效应晶体管与二极管Schcttky
| 型号： | AO4916L |
| 厂家： | 
Freescale |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode |
| 文件： | 总7页 (文件大小：458K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4916, AO4916L
N-Channel Enhancement Mode Field
with Schcttky Diode
Effect Transistor
General Description
DS(ON)
The AO4916 uses advanced trench technology to
provide excellent R
and low gate charge. The
and synchronous rectifier combination for use in DC-
parallel with the synchronous MOSFET to boost
two MOSFETs make a compact and efficient switch
DC converters. A Schottky diode is co-packaged in
( Green Product ) is offered in a lead-free package.
efficiency further. AO4916L
Features
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 17mΩ (VGS = 10V)
R
DS(ON) < 27mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
D1
S1
D2
K
A
1
2
3
4
8
7
6
5
D2
D2
G1
G2
D1/S2/K
D1/S2/K
D1/S2/K
S1/A
G1
G2
S2
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
MOSFET
Schottky
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
V
V
VGS
±20
8.5
TA=25°C
TA=70°C
ID
Continuous Drain Current A
Pulsed Drain Current B
A
6.6
40
IDM
VKA
Schottky reverse voltage
30
3
V
A
TA=25°C
TA=70°C
IF
IFM
Continuous Forward Current A
Pulsed Forward Current B
2
40
2
TA=25°C
TA=70°C
2
PD
W
°C
Power Dissipation
1.28
1.28
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
48
62.5
t ≤ 10s
RθJA
Steady-State
Maximum Junction-to-Lead C
Steady-State
°C/W
°C/W
74
35
110
40
RθJL
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
t ≤ 10s
47.5
62.5
RθJA
RθJL
Steady-State
71
32
110
40
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AO4916, AO4916L
Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
0.005
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1
1.8
40
A
VGS=10V, ID=8.5A
14
20
17
25
27
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
DS=5V, ID=8.5A
23
S
V
A
IS=1A,VGS=0V
0.76
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1040 1250
180
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
110
VGS=0V, VDS=0V, f=1MHz
0.35
0.7
0.85
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
19.2
9.36
2.6
24
12
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=8.5A
Qgd
4.2
tD(on)
tr
tD(off)
tf
5.2
7.5
6.5
25
5
VGS=10V, VDS=15V, RL=1.8Ω,
4.4
ns
RGEN=3Ω
17.3
3.3
ns
ns
IF=8.5A, dI/dt=100A/µs
IF=8.5A, dI/dt=100A/µs
trr
16.7
9.3
21
11
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
SCHOTTKY PARAMETERS
VF
Irm
CT
Forward Voltage Drop
IF=1.0A
0.45
0.5
V
VR=30V
0.007 0.05
VR=30V, TJ=125°C
VR=30V, TJ=150°C
Maximum reverse leakage current
mA
3.2
10
20
12
37
Junction Capacitance
VR=15V
pF
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO4916, AO4916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
4V
10V
4.5V
VDS=5V
3.5V
125°C
25°C
VGS=3V
4
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
V
DS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
26
24
22
20
18
16
14
12
10
1.6
1.4
1.2
1
VGS=10V
ID=8.5A
V
GS=4.5V
VGS=4.5V
VGS=10V
0.8
0
5
10
D (A)
15
20
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
30
20
10
ID=8.5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO4916, AO4916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
VDS=15V
ID=8.5A
1250
1000
750
500
250
0
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
40
30
20
10
0
10µs
100µs
1ms
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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PD-00071
Document No.
rev C
Version
Title
AO4916 Marking Description
SO-8 PACKAGE MARKING DESCRIPTION
Green product
Standard product
NOTE:
LOGO - AOS LOGO
4916
F&A
Y
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
W
- WEEK CODE.
L T
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
CODE
4916
Standard product
Green product
AO4916
4916
AO4916L
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SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
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