AO4614B [FREESCALE]
40V Dual P N-Channel MOSFET; 双路40V P N沟道MOSFET
| 型号： | AO4614B |
| 厂家： | 
Freescale |
| 描述： | 40V Dual P N-Channel MOSFET |
| 文件： | 总7页 (文件大小：708K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4614B
40V Dual P + N-Channel MOSFET
General Description
The AO4614B uses advanced trench technology
MOSFETs to provide excellent R
DS(ON) and low gate
in H-bridge, Inverters and other applications.
charge. The complementary MOSFETs may be used
Features
N-Channel
DS (V) = 40V,
P-Channel
-40V
V
ID = 6A (VGS=10V)
RDS(ON)
-5A (VGS=-10V)
< 30mΩ (VGS=10V)
< 45mΩ (VGS= -10V)
< 38mΩ (VGS=4.5V) < 63mΩ (VGS= -4.5V)
SOIC-8
D2
D1
Top View
S2
D2
D2
D1
D1
1
2
3
4
8
G2
S1
G1
7
6
5
G2
G1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
Drain-Source Voltage
VDS
40
-40
V
Gate-Source Voltage
VGS
±20
±20
-5
V
TA=25°C
TA=70°C
6
Continuous Drain
Current A
Pulsed Drain Current B
Avalanche Current B
ID
5
-4
A
IDM
IAR
EAR
30
14
-30
-20
20
Repetitive avalanche energy L=0.1mH B
9.8
mJ
W
TA=25°C
Power Dissipation
TA=70°C
2
2
PD
1.28
-55 to 150
1.28
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
n-ch
Typ
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
48
74
35
RθJA
Maximum Junction-to-Ambient A
Steady-State
n-ch
Maximum Junction-to-Lead C
Steady-State
RθJL
RθJA
RθJL
n-ch
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
p-ch
p-ch
p-ch
48
74
35
62.5
110
50
°C/W
°C/W
°C/W
Steady-State
Maximum Junction-to-Lead C
Steady-State
1/7
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AO4614B
40V Dual P + N-Channel MOSFET
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
V
DS=40V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3
nA
V
VGS(th)
ID(ON)
1.7
30
2.5
A
V
GS=10V, ID=6A
24
36
30
45
38
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=4.5V, ID=5A
VDS=5V, ID=6A
IS=1A,VGS=0V
30
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
19
S
V
A
0.76
1
2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
410
516
82
650
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
43
V
GS=0V, VDS=0V, f=1MHz
4.6
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
8.9
4.3
2.4
1.4
6.4
3.6
16.2
6.6
18
10.8
5.6
nC
nC
nC
nC
ns
V
ID=6A
GS=10V, VDS=20V,
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=20V, RL=3.3Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=6A, dI/dt=100A/µs
IF=6A, dI/dt=100A/µs
24
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
10
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2 : Nov. 2010
2/7
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AO4614B
40V Dual P + N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
40
35
30
25
20
15
10
5
30
25
20
15
10
5
10V
5V
4.5V
VDS=5V
4V
125°C
VGS=3.5V
25°C
0
0
0
1
2
3
4
5
2
2.5
3
3.5
GS(Volts)
4
4.5
VDS (Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
36
34
32
30
28
26
24
22
20
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=6A
VGS=4.5V
ID=5A
VGS=10V
0.8
0.6
0
5
10
15
20
-50 -25
0
25
50
75
100 125 150
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
100
10
ID=6A
70
60
50
40
30
20
10
1
125°C
25°C
0.1
125°C
25°C
0.01
0.001
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
VSD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
3/7
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AO4614B
40V Dual P + N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
800
600
400
200
0
10
8
VDS=20V
ID= 6A
Ciss
6
4
Crss
2
Coss
0
0
10
20
VDS (Volts)
30
40
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
10
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
1ms
10ms
limited
0.1s
0.1
0.01
1s
10s
TJ(Max)=150°C
TA=25°C
DC
1
0.00001
0.001
0.1
10
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
1
0.1
PD
Ton
T
Single Pulse
0.001 0.01
0.01
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/7
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AO4614B
40V Dual P + N-Channel MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID= -250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-40
V
V
DS= -40V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID= -250µA
VGS= -10V, VDS= -5V
VGS= -10V, ID= -5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-30
-2
A
36
52
45
65
63
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS= -4.5V, ID= -4A
VDS= -5V, ID= -5A
IS= -1A,VGS=0V
50
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
13
S
V
A
-0.76
-1
-2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
750
940
97
1175
pF
pF
pF
Ω
V
GS=0V, VDS= -20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
72
VGS=0V, VDS=0V, f=1MHz
14
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
17
7.9
3.4
3.2
6.2
8.4
44.8
41.2
21
22
10
nC
nC
nC
nC
ns
VGS= -10V, VDS= -20V,
ID= -5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS= -10V, VDS= -20V, RL=4Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF= -5A, dI/dt=100A/µs
IF= -5A, dI/dt=100A/µs
27
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
14
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
A
T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the
T
t
≤ 10s thermal resistance rating.
r
B: Repetitive rating, pulse width limited by junction temperature.
B
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
C
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
D
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
E
T A=25°C. The SOA curve provides a single pulse rating .
S
Rev1 : Jan 2010
5/7
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AO4614B
40V Dual P + N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
20
15
10
5
30
25
20
15
10
5
VDS=-5V
-10V
-5V
-4V
-4.5V
VGS=-3.5V
125°C
25°C
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
-VDS (Volts)
-VGS(Volts)
Fig 12: On-Region Characteristics
Figure 13: Transfer Characteristics
65
60
55
50
45
40
35
30
1.7
1.5
1.3
1.1
0.9
0.7
VGS=-10V
ID=-5A
VGS=-4.5V
VGS=-4.5V
ID=-4A
VGS=-10V
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
-ID (A)
Temperature (°C)
Figure 15: On-Resistance vs. Junction
Temperature
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage
130
110
90
100
10
ID=-5A
1
125°C
0.1
70
125°C
25°C
0.01
0.001
0.0001
50
25°C
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-VSD (Volts)
-VGS (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage
Figure 17: Body-Diode Characteristics
6/7
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AO4614B
40V Dual P + N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1400
1200
1000
800
600
400
200
0
VDS=-20V
ID= -5A
8
Ciss
6
4
Crss
Coss
2
0
0
10
20
-VDS (Volts)
30
40
0
3
6
9
12
15
18
Qg (nC)
Figure 19: Capacitance Characteristics
Figure 18: Gate-Charge Characteristics
1000
100
10
100
10
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
1ms
10ms
0.1s
0.1
0.01
1s
10s
TJ(Max)=150°C
TA=25°C
DC
1
0.1
1
10
100
-VDS (Volts)
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 20: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 21: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
1
0.1
PD
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance
7/7
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