AO4614BL [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AO4614BL |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4614B
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 40V, ID = 6A (VGS=10V)
The AO4614B/L uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
AO4614B and AO4614BL are electrically identical.
RDS(ON)< 30mΩ (VGS=10V)
RDS(ON)< 38mΩ (VGS=4.5V)
p-channel
VDS (V) = -40V, ID = -5A (VGS=-10V)
-RoHS Compliant
-AO4614BL is Halogen Free
R
DS(ON)< 45mΩ (VGS= -10V)
RDS(ON)< 63mΩ (VGS= -4.5V)
D1
S1
D2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S2
SOIC-8
p-channel
n-channel
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
40
-40
±20
-5
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain CurrentB
Avalanche CurrentB
±20
V
TA=25°C
TA=70°C
6
ID
5
-4
A
IDM
IAR
EAR
30
14
-30
-20
Repetitive avalanche energy L=0.1mHB
9.8
20
mJ
W
TA=25°C
Power Dissipation
TA=70°C
2
2
PD
1.28
-55 to 150
1.28
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
n-ch
Typ
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-AmbientA
48
74
35
t ≤ 10s
RθJA
RθJL
RθJA
RθJL
Maximum Junction-to-AmbientA
n-ch
Steady-State
Maximum Junction-to-LeadC
Steady-State
n-ch
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
p-ch
p-ch
p-ch
48
74
35
62.5
110
50
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Maximum Junction-to-LeadC
Steady-State
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614B
N Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6A
±100
3
nA
V
VGS(th)
ID(ON)
1.7
30
2.5
A
24
36
30
45
38
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
VGS=4.5V, ID=5A
VDS=5V, ID=6A
IS=1A,VGS=0V
30
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
19
S
V
A
0.76
1
2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
516
82
650
pF
pF
pF
Ω
V
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
43
GS=0V, VDS=0V, f=1MHz
4.6
SWITCHING PARAMETERS
Qg (10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.9
4.3
2.4
1.4
6.4
3.6
16.2
6.6
18
10.8
5.6
nC
nC
nC
nC
ns
Qg (4.5V)
V
GS=10V, VDS=20V,
ID=6A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=20V, RL=3.3Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=6A, dI/dt=100A/µs
IF=6A, dI/dt=100A/µs
24
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
10
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0 : Sept 2007
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
40
35
30
25
20
15
10
5
30
25
20
15
10
5
10V
5V
4.5V
VDS=5V
4V
125°C
VGS=3.5V
25°C
0
0
0
1
2
3
4
5
2
2.5
3
3.5
GS(Volts)
4
4.5
VDS (Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
36
34
32
30
28
26
24
22
20
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=6A
VGS=4.5V
ID=5A
VGS=10V
0.8
0.6
0
5
10
15
20
-50 -25
0
25
50
75
100 125 150
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
100
10
ID=6A
70
60
50
40
30
20
10
1
125°C
25°C
0.1
125°C
25°C
0.01
0.001
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
V
SD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
800
600
400
200
0
10
8
VDS=20V
ID= 6A
Ciss
6
4
Crss
2
Coss
0
0
10
20
DS (Volts)
30
40
0
2
4
6
8
10
V
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
10
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
1ms
10ms
limited
0.1s
0.1
0.01
1s
10s
TJ(Max)=150°C
TA=25°C
DC
1
0.00001
0.001
0.1
10
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
1
0.1
PD
Ton
T
Single Pulse
0.001 0.01
0.01
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614B
P-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID= -250µA, VGS=0V
-40
V
VDS= -40V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID= -250µA
VGS= -10V, VDS= -5V
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-30
-2
A
V
GS= -10V, ID= -5A
36
52
45
65
63
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
VGS= -4.5V, ID= -4A
VDS= -5V, ID= -5A
IS= -1A,VGS=0V
50
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
13
S
V
A
-0.76
-1
-2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
940
97
1175
pF
pF
pF
Ω
VGS=0V, VDS= -20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
72
VGS=0V, VDS=0V, f=1MHz
14
SWITCHING PARAMETERS
Qg (-10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
17
7.9
3.4
3.2
6.2
8.4
44.8
41.2
21
22
10
nC
nC
nC
nC
ns
Qg (-4.5V)
VGS= -10V, VDS= -20V,
ID= -5A
Qgs
Qgd
tD(on)
tr
VGS= -10V, VDS= -20V, RL=4Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF= -5A, dI/dt=100A/µs
IF= -5A, dI/dt=100A/µs
27
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
14
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the
v
t
≤ 10s thermal resistance rating.
r
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The SOA curve provides a single pulse rating.
Rev0 : Sept 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
20
15
10
5
30
25
20
15
10
5
VDS=-5V
-10V
-5V
-4V
-4.5V
VGS=-3.5V
125°C
25°C
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
-VDS (Volts)
-VGS(Volts)
Fig 12: On-Region Characteristics
Figure 13: Transfer Characteristics
65
60
55
50
45
40
35
30
1.7
1.5
1.3
1.1
0.9
0.7
VGS=-10V
ID=-5A
VGS=-4.5V
VGS=-4.5V
ID=-4A
VGS=-10V
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
-ID (A)
Temperature (°C)
Figure 15: On-Resistance vs. Junction
Temperature
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage
130
110
90
100
10
ID=-5A
1
125°C
0.1
70
125°C
25°C
0.01
0.001
0.0001
50
25°C
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-VSD (Volts)
-VGS (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage
Figure 17: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4614B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1400
1200
1000
800
600
400
200
0
VDS=-20V
ID= -5A
8
Ciss
6
4
Crss
Coss
2
0
0
10
20
-VDS (Volts)
30
40
0
3
6
9
12
15
18
Qg (nC)
Figure 19: Capacitance Characteristics
Figure 18: Gate-Charge Characteristics
1000
100
10
100
10
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
1ms
10ms
0.1s
0.1
0.01
1s
10s
TJ(Max)=150°C
TA=25°C
DC
1
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 21: Single Pulse Power Rating Junction-to
Ambient (Note E)
Figure 20: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
1
0.1
PD
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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