FMS2029_1 [FILTRONIC]
DC-20 GHZ MMIC SPST ABSORPTIVE SWITCH; DC- 20 GHz的MMIC SPST吸收式开关
| 型号： | FMS2029_1 |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | DC-20 GHZ MMIC SPST ABSORPTIVE SWITCH |
| 文件： | 总5页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pre-Production Datasheet v3.0
DC–20 GHZ MMIC SPST ABSORPTIVE SWITCH
FEATURES:
FUNCTIONAL SCHEMATIC:
•
•
•
•
•
Low insertion loss: 2.2 dB at 20 GHz
High isolation: 50 dB at 20 GHz
Absorptive input and output in off-state
Excellent low control voltage performance
Available in die form
RFout
RFin
GENERAL DESCRIPTION:
The FMS2029 is a low loss high isolation
broadband single-pole-single-throw Gallium
Arsenide switch, designed on the FL05 0.5µm
switch process from Filtronic. It offers
absorptive properties from both ports (50
Ohms terminations).
This process technology offers leading-edge
performance optimised for switch applications.
The FMS2029 is developed for the broadband
V1
V2
TYPICAL APPLICATIONS:
•
•
•
•
Broadband communications
Test Instrumentation
Fibre Optics
Electronic warfare (ECM, ESM)
communications,
instrumentation
and
electronic warfare markets.
ELECTRICAL SPECIFICATIONS (SMALL-SIGNAL UNLESS OTHERWISE STATED):
PARAMETER
Insertion Loss
Isolation
CONDITIONS
MIN
TYP
MAX
UNITS
DC
-1
-0.85
-1
-1.4
-1.7
-2.3
–
–
–
–
–
dB
dB
dB
dB
dB
5 GHz
10 GHz
15 GHz
20 GHz
-1.35
-1.65
-2
-2.55
DC-20 GHz
DC-20 GHz
–
–
-60
-20
-45
-17
dB
dB
Input Return Loss
(ON state)
Output Return Loss
(ON state)
DC-20 GHz
DC-20 GHz
DC-20 GHz
–
–
–
-20
-12
-12
-17
-10
-10
dB
dB
dB
Input Return Loss
(OFF state)
Output Return Loss
(OFF state)
2 GHz
10 GHz
20 GHz
24.5
23.5
20.5
26.7
25.2
22.5
–
–
–
dBm
dBm
dBm
P1dB
10% to 90% RF
90% to 10% RF
–
–
–
–
17
42
27
53
–
–
–
–
ns
ns
ns
ns
Switching speed
50% DC to 90% RF
50% DC to 10% RF
Note 1: TAMBIENT = 25°C, Vctrl = 0V/-5V
Note 2 : Specifications based on on-wafer measurements
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
Pre-Production Datasheet v3.0
ABSOLUTE MAXIMUM RATINGS:
TRUTH TABLE:
ABSOLUTE
MAXIMUM
PARAMETER
SYMBOL
Pin
CONTROL LINE
RF PATH
Max Input
Power
+27dBm
V1
V2
RFIN-RFO
-5V
0V
0V
On (Low Loss)
Off (Isolation)
Operating
Temp
-40°C to
+85°C
Toper
Tstor
-5V
-55°C to
+150°C
Storage Temp
Note: -5V ± 0.2V; 0V ± 0.2V
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
PIN
COORDINATES
(µm)
PAD LAYOUT:
PAD
DESCRIPTION
NAME
RFIN
RFO
V1
RFIN
RFOUT
V1
141,587
1789,587
901,161
1101,161
V2
V2
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
MIN. BOND PAD PITCH
MIN. BOND PAD OPENING
(µm x µm )
DIE SIZE (µm)
DIE THICKNESS (µm)
(µm)
1910 x 1110
100
150
116 x 116
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Pre-Production Datasheet v3.0
TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS:
Note: Measurement Conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25° C unless otherwise stated
Insertion Loss (S21 ON)
Isolation (S21 OFF)
0.00
-0.50
-1.00
-1.50
-2.00
-2.50
0.00
-20.00
-40.00
-60.00
-80.00
-100.00
-120.00
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20
Frequency (GHz)
Frequency (GHz)
Input Return Loss (S11 ON)
Output Return Loss (S22 ON)
0.00
0.00
-5.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-10.00
-15.00
-20.00
-25.00
-30.00
0
2
4
6
8
10
12 14
16 18
20
0
2
4
6
8
10 12
14 16
18 20
Frequency (GHz)
Frequency (GHz)
IN and OUT Absorptive Return Loss (S11 OFF / S22 OFF)
P1dB
0.00
-5.00
28.00
24.00
20.00
16.00
12.00
8.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
4.00
0.00
0
2
4
6
8
10 12
14 16
18 20
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (GHz)
3
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Pre-Production Datasheet v3.0
TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS OVER TEMPERATURE:
Note: Measurement Conditions VCTRL= -5V (low) & 0V (high)
T
AMBIENT = 25°C
TCOLD = -40°C
THOT = +85°C
Insertion Loss (S21 ON)
Isolation (S21 OFF)
0.00
-20.00
-40.00
-60.00
-80.00
-100.00
-120.00
0.00
-0.50
-1.00
-1.50
-2.00
-2.50
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
Frequency (GHz)
Input Return Loss (S11 ON)
Output Return Loss (S22 ON)
0.00
-5.00
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
-30.00
-10.00
-15.00
-20.00
-25.00
-30.00
0
2
4
6
8
10 12
14 16
18 20
0
2
4
6
8
10 12
14 16
18 20
Frequency (GHz)
Frequency (GHz)
Absorptive Output Return Loss (S22 OFF)
P1dB
0.00
-5.00
28.00
24.00
20.00
16.00
12.00
8.00
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
4.00
0.00
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12
14 16
18 20
Frequency (GHz)
Frequency (GHz)
4
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Pre-Production Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
HANDLING PRECAUTIONS:
To avoid damage to
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
the
devices
care
should be exercised
during
Proper
handling.
Electrostatic
The back of the die is metallised and the
recommended mounting method is by the use
of conductive epoxy. Epoxy should be applied
to the attachment surface uniformly and
sparingly to avoid encroachment of epoxy on
to the top face of the die and ideally should not
exceed half the chip height. For automated
dispense Ablestick LMISR4 is recommended
and for manual dispense Ablestick 84-1 LMI or
84-1 LMIT are recommended. These should be
cured at a temperature of 150°C for one hour
in an oven especially set aside for epoxy
curing only. If possible the curing oven should
be flushed with dry nitrogen. Eutectic die
attach is not recommended.
Discharge
(ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
These devices should be treated as Class 1A
(250-500 V) as defined in JEDEC Standard
No. 22-A114. Further information on ESD
control measures can be found in MIL-STD-
1686 and MIL-HDBK-263.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including S-
parameters are available on request.
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire
be used. Thermosonic ball bonding is
preferred. A nominal stage temperature of
150°C and a bonding force of 40g has been
shown to give effective results for 25µm wire.
Ultrasonic energy shall be kept to a minimum.
For this bonding technique, stage temperature
should not be raised above 200°C and bond
force should not be raised above 60g.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER
DESCRIPTION
Thermosonic
wedge
bonding
and
thermocompression wedge bonding can also
be used to achieve good wire bonds.
FMS2029-000-WP
Die in Waffle-pack
(Gel-pak available on
request)
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
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