FGA70N30TTU [FAIRCHILD]
Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PN, 3 PIN;
| 型号： | FGA70N30TTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PN, 3 PIN 局域网 电动机控制 栅 瞄准线 晶体管 |
| 文件： | 总7页 (文件大小：551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2007
FGA70N30T
tm
300V, 70A PDP IGBT
Features
General Description
•
•
•
•
•
High current capability
Using Novel Trench IGBT Technology, Fairchild’s new sesries
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Low saturation voltage: VCE(sat) =1.5V @ IC = 40A
High input impedance
Fast switching
RoHS complaint
Application
. PDP System
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
300
Units
VCES
Collector-Emitter Voltage
Gate-Emitter Voltage
V
V
VGES
±30
IC pulse(1)*
Pulsed Collector Current
Maximum Power Dissipation
@ TC
@ TC
=
=
25oC
25oC
160
A
W
201
PD
Maximum Power Dissipation
@ TC = 100oC
W
90.6
TJ
Operating Junction Temperature
Storage Temperature Range
-55 to +150
-55 to +150
oC
oC
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
TL
300
oC
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.62
40
Units
oC/W
oC/W
RθJC(IGBT)
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
--
--
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
©2006 Fairchild Semiconductor Corporation
FGA70N30T Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Packaging
Type
Max Qty
per Box
Device Marking
Device
Package
Qty per Tube
FGA70N30T
FGA70N30TTU
TO-3P
Tube
30ea
-
o
Electrical Characteristics
T = 25 C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
GE = 0V, IC = 250uA
300
--
--
--
--
V
∆BVCES
∆TJ
/
Temperature Coefficient of Breakdown
Voltage
V
0.2
V/oC
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
250
uA
nA
± 400
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250uA, VCE = VGE
V
V
V
3.0
--
4.5
1.2
1.5
5.5
1.5
--
I
C =20A, VGE = 15V
IC =40A, VGE = 15V
C =70A, VGE = 15V
C = 25oC
C = 70A, VGE = 15V
C = 125oC
--
VCE(sat)
Collector to Emitter
Saturation Voltage
I
T
--
--
1.8
1.9
--
--
V
V
I
T
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
3000
160
110
--
--
--
pF
pF
pF
V
CE = 30V VGE = 0V
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
td(on)
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
--
32
90
--
--
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
V
R
CC = 200V, IC = 40A
G = 15Ω, VGE = 15V
Resistive Load, TC = 25oC
Rise Time
Turn-Off Delay Time
Fall Time
175
170
30
--
300
--
Turn-On Delay Time
Rise Time
V
CC = 200V, IC = 40A
G = 15Ω, VGE = 15V
Resistive Load, TC = 125oC
90
--
R
Turn-Off Delay Time
Fall Time
185
235
125
25
--
--
Qg
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
--
V
V
CE = 200V, IC = 40A
GE = 15V
Qge
Qgc
--
55
--
2
www.fairchildsemi.com
FGA70N30T Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
160
160
TC = 125oC
TC = 25oC
10V
10V
20V
15V
12V
20V
15V
12V
120
120
80
40
0
80
VGE = 8V
VGE = 8V
40
0
0
2
4
6
8
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
C h a r a c t e r i s t i c s
Figure 4. Transfer Characteristics
160
160
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
100
TC
TC = 125oC
=
25oC
TC
=
25oC
TC = 125oC
120
80
40
0
10
1
0
1
2
3
4
2
4
6
8
10
12
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
2.4
2.0
1.6
1.2
0.8
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
16
12
8
70A
40A
40A
70A
IC = 20A
4
IC = 20A
0
25
50
75
100
125
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
3
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FGA70N30T Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
6000
20
Common Emitter
TC = 125oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
5000
4000
3000
2000
1000
0
16
12
8
Ciss
Coss
Crss
40A
70A
4
IC = 20A
0
30
1
10
Collector-Emitter Voltage, VCE [V]
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
15
Common Emitter
IC MAX (Pulsed)
100
TC = 25oC
50µs
100µs
12
Vcc = 200V
100V
1ms
10
9
6
3
0
IC MAX (Continuous)
10ms
1
Single Nonrepetitive
Pulse TC = 25oC
DC Operation
0.1
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
500
0
30
60
90
120
150
Collector - Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Turn-on Characteristics vs.
Gate Resistance
3000
300
1000
100
tf
tr
100
Common Emitter
VCC = 200V, VGE = 15V
Common Emitter
VCC = 200V, VGE = 15V
td(off)
IC = 40A
TC = 25oC
TC = 125oC
IC = 40A
td(on)
TC = 25oC
TC = 125oC
10
10
0
20
40
60
80
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
4
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FGA70N30T Rev. A
Typical Performance Characteristics (Continued)
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
500
Common Emitter
VGE = 15V, RG = 15Ω
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 25oC
TC = 125oC
tr
TC = 125oC
100
tf
td(off)
td(on)
tf
10
100
0
20
40
60
80
100
0
20
40
60
80
100
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
10000
2000
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
1000
Eoff
TC = 125oC
1000
Eon
100
Common Emitter
100
Eon
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
Eoff
10
10
0
20
40
60
80
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
1E-3
PDM
t1
single pulse
t2
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
5
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FGA70N30T Rev. A
TO-3PN
6
www.fairchildsemi.com
FGA70N30T Rev. A
tm
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OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b) support
or sustain life, and (c) whose failure to perform when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Rev. I20
Obsolete
Not In Production
This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for refer-
ence information only.
Rev. I25
7
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FGA70N30T Rev. A
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