FGA90N33AT [FAIRCHILD]
330V, 90A PDP Trench IGBT; 330V ， 90A PDP沟道IGBT
| 型号： | FGA90N33AT |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 330V, 90A PDP Trench IGBT |
| 文件： | 总8页 (文件大小：656K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2008
FGA90N33AT
tm
330V, 90A PDP Trench IGBT
Features
General Description
•
•
•
•
•
High current capability
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Low saturation voltage: VCE(sat) =1.1V @ IC = 20A
High input impedance
Fast switching
RoHS compliant
Applications
•
PDP System
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
330
Units
VCES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
VGES
± 30
IC
@ TC = 25oC
@ TC = 25oC
90
IC pulse(1)
IC pulse(2)
Pulsed Collector Current
Pulsed Collector Current
220
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
330
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
223
89
W
W
oC
oC
PD
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.56
40
Units
oC/W
oC/W
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
-
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
*I pluse limited by max Tj
C
©2008 Fairchild Semiconductor Corporation
FGA90N33AT Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Max Qty
Packaging
Type
Device Marking
Device
Package
Qty per Tube
per Box
FGA90N33AT
FGA90N33ATTU
TO-3P
Tube
30ea
-
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
330
-
-
-
-
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
250
±400
µA
nA
IGES
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 45A, VGE = 15V,
2.5
-
4.0
1.1
5.5
1.4
V
V
-
-
1.3
1.6
-
-
V
V
VCE(sat)
Collector to Emitter Saturation Voltage IC = 90A, VGE = 15V,
TC = 25oC
IC = 90A, VGE = 15V,
TC = 125oC
-
1.7
-
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
2200
135
-
-
-
pF
pF
pF
VCE = 30V VGE = 0V,
f = 1MHz
,
Output Capacitance
Reverse Transfer Capacitance
100
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
23
40
-
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
Rise Time
-
Resistive Load, TC = 25oC
Turn-Off Delay Time
Fall Time
100
180
20
-
240
Turn-On Delay Time
Rise Time
-
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
40
-
Resistive Load, TC = 125oC
Turn-Off Delay Time
Fall Time
110
250
95
-
300
Qg
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
-
-
-
VCE = 200V, IC = 20A,
VGE = 15V
Qge
Qgc
12
40
2
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FGA90N33AT Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
160
160
TC = 25oC
TC = 125oC
9V
10V
20V
20V
8V
9V
15V
12V
15V
12V
120
80
40
0
120
10V
8V
7V
80
7V
40
VGE = 6V
VGE = 6V
4
0
0
1
2
3
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
160
160
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
120
120
80
40
0
80
40
0
0
1
2
3
4
0
2
4
6
8
10
12
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
16
12
8
90A
40A
90A
40A
IC = 20A
4
IC = 20A
0
25
50
75
100
125
0
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
3
www.fairchildsemi.com
FGA90N33AT Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
4000
20
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
TC = 125oC
Cies
TC = 25oC
16
12
8
3000
2000
1000
0
Coes
Cres
40A
4
90A
IC = 20A
4
0
0.1
1
10
30
0
8
12
16
20
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
15
500
Common Emitter
TC = 25oC
10µs
100µs
1ms
100
12
10
1
9
10 ms
DC
VCC = 100V
200V
6
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
0.01
3
0
3. Single Pulse
0
20
40
60
80
100
1
10
100
500
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Gate Resistance
5500
200
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
100
TC = 25oC
TC = 125oC
td(off)
1000
100
10
tr
td(on)
tf
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10
0
20
40
60
80
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
4
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FGA90N33AT Rev. A
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
400
Common Emitter
VGE = 15V, RG = 5Ω
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
tf
tr
100
td(on)
td(off)
100
100
10
0
20
40
60
80
100
0
20
40
60
80
100
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Turn off Switching SOA Characteristics
400
100
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1
10
100
600
Collector-Emitter Voltage, VCE [V]
5
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FGA90N33AT Rev. A
Typical Performance Characteristics
Figure 16.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
0.001
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
6
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FGA90N33AT Rev. A
Mechanical Dimensions
TO-3P
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
4.80 ±0.20
+0.15
ø3.20 ±0.10
1.50
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
1.40 ±0.20
+0.15
–0.05
0.60
5.45TYP
5.45TYP
[5.45 ±0.30]
[5.45 ±0.30]
Dimensions in Millimeters
7
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FGA90N33AT Rev. A
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(a) are intended for surgical implant into the body or (b)
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properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
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2. A critical component in any component of a life support,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
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changes at any time without notice to improve design.
Preliminary
First Production
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Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
FGA90N33AT Rev. A
8
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