FGA90N33ATDTU [ONSEMI]
330V,PDP 沟槽 IGBT;![FGA90N33ATDTU](http://pdffile.icpdf.com/pdf2/p00364/img/icpdf/FGA90N33ATDT_2227061_icpdf.jpg)
型号: | FGA90N33ATDTU |
厂家: | ![]() |
描述: | 330V,PDP 沟槽 IGBT 局域网 瞄准线 双极性晶体管 功率控制 光电二极管 |
文件: | 总11页 (文件大小:517K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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August 2011
FGA90N33ATD
330V, 90A PDP Trench IGBT
Features
General Description
•
•
•
•
•
High current capability
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Low saturation voltage: VCE(sat) =1.1V @ IC = 20A
High input impedance
Fast switching
RoHS compliant
Applications
•
PDP System
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
330
Units
VCES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
VGES
± 30
IC
@ TC = 25oC
@ TC = 25oC
90
IC pulse(1)
IC pulse(2)
Pulsed Collector Current
Pulsed Collector Current
220
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
330
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
223
89
W
W
oC
oC
PD
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.56
1.16
40
Units
oC/W
oC/W
oC/W
RθJC(IGBT)
RθJC(Diode)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
-
-
Notes:
(1) Repetitive test , Pulse width=100usec , Duty=0.1
(2) Half sine wave , D<0.01, Pulse width<5usec
*I pluse limited by max Tj
C
©2011 Fairchild Semiconductor Corporation
FGA90N33ATD Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Max Qty
Packaging
Type
Device Marking
Device
Package
Qty per Tube
per Box
FGA90N33ATD
FGA90N33ATDTU
TO-3P
Tube
30ea
-
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 400μA
330
-
-
-
-
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
400
±400
μA
nA
IGES
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250μA, VCE = VGE
2.5
-
4.0
1.1
5.5
1.4
V
V
I
C = 20A, VGE = 15V
IC = 45A, VGE = 15V,
IC = 90A, VGE = 15V,
-
-
1.3
1.6
-
-
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 90A, VGE = 15V,
TC = 125oC
-
1.7
-
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
2200
135
-
-
-
pF
pF
pF
VCE = 30V VGE = 0V,
f = 1MHz
,
Output Capacitance
Reverse Transfer Capacitance
100
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
23
40
-
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
VCC = 200V, IC = 20A,
Rise Time
-
R
G = 5Ω, VGE = 15V,
Resistive Load, TC = 25oC
Turn-Off Delay Time
Fall Time
100
180
20
-
240
Turn-On Delay Time
Rise Time
-
VCC = 200V, IC = 20A,
RG = 5Ω, VGE = 15V,
40
-
Resistive Load, TC = 125oC
Turn-Off Delay Time
Fall Time
110
250
95
-
300
Qg
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
-
-
-
V
CE = 200V, IC = 20A,
Qge
Qgc
12
VGE = 15V
40
2
www.fairchildsemi.com
FGA90N33ATD Rev. C0
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.1
0.96
23
Max Units
TC = 25oC
-
-
-
-
-
-
-
-
1.5
VFM
Diode Forward Voltage
IF = 10A
V
TC = 125oC
TC = 25oC
TC = 125oC
TC = 25oC
-
-
trr
Diode Reverse Recovery Time
ns
36
-
2.8
5.1
32
-
IF =10A, dI/dt = 200A/μs
Irr
Diode Peak Reverse Recovery
Current
A
T
C = 125oC
C = 25oC
-
T
-
Qrr
Diode Reverse Recovery Charge
nC
TC = 125oC
91
-
3
www.fairchildsemi.com
FGA90N33ATD Rev. C0
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
160
160
TC = 25oC
TC = 125oC
9V
10V
20V
20V
8V
9V
15V
12V
15V
12V
120
80
40
0
120
10V
8V
7V
80
7V
40
VGE = 6V
VGE = 6V
4
0
0
1
2
3
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Figure 4. Transfer Characteristics
Characteristics
160
160
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
120
120
80
40
0
80
40
0
0
1
2
3
4
0
2
4
6
8
10
12
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
16
12
8
90A
40A
90A
40A
IC = 20A
4
IC = 20A
0
25
50
75
100
125
0
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
4
www.fairchildsemi.com
FGA90N33ATD Rev. C0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
20
4000
Common Emitter
TC = 125oC
Common Emitter
VGE = 0V, f = 1MHz
Cies
TC = 25oC
16
12
8
3000
2000
1000
0
Coes
Cres
40A
4
90A
IC = 20A
4
0
0
8
12
16
20
0.1
1
10
30
Gate-Emitter Voltage, VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
500
15
Common Emitter
TC = 25oC
10μs
100
100μs
12
1ms
10 ms
DC
10
1
9
VCC = 100V
200V
6
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
0.01
3
0
3. Single Pulse
1
10
100
500
0
20
40
60
80
100
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
200
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
100
TC = 125oC
td(off)
1000
100
10
tr
tf
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10
0
20
40
60
80
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
5
www.fairchildsemi.com
FGA90N33ATD Rev. C0
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
Common Emitter
400
VGE = 15V, RG = 5Ω
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
tf
tr
100
td(on)
td(off)
100
100
10
0
20
40
60
80
100
0
20
40
60
80
100
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Turn off Switching SOA Characteristics Figure 16. Forward Characteristics
400
200
100
100
TJ = 125oC
10
1
TJ = 25oC
10
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 125oC
TC = 125oC
1
0.1
0.0
1
10
100
600
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
6
www.fairchildsemi.com
FGA90N33ATD Rev. C0
Typical Performance Characteristics
Figure 17. Reverse Recovery Current
Figure 18. Stored Charge
4
60
200A/μs
3
45
200A/μs
2
30
di/dt = 100A/μs
di/dt = 100A/μs
1
0
15
0
10
20
30
40
5
10
20
30
40
5
Forward Current, IF [A]
Forward Current, IF [A]
Figure 19. Reverse Recovery Current
40
30
200A/μs
di/dt = 100A/μs
20
10
5
10
20
30
40
Forward Current, IF [A]
Figure 20.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
0.001
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
7
www.fairchildsemi.com
FGA90N33ATD Rev. C0
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
8
www.fairchildsemi.com
FGA90N33ATD Rev. C0
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Rev. I55
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9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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FGA90N33ATTU
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3P, 3 PIN
FAIRCHILD
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