FGA70N33BTD [FAIRCHILD]
330V, 70A PDP IGBT; 330V ， 70A PDP IGBT
| 型号： | FGA70N33BTD |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 330V, 70A PDP IGBT |
| 文件： | 总9页 (文件大小：750K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2008
FGA70N33BTD
tm
330V, 70A PDP IGBT
Features
General Description
•
•
•
•
•
High current capability
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP
applications where low conduction and switching losses are
essential.
Low saturation voltage: VCE(sat) =1.7V @ IC = 70A
High input impedance
Fast switching
RoHS Compliant
Applications
•
PDP System
C
G
TO-3P
E
G
C
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
Ratings
330
Units
VCES
Collector to Emitter Voltage
V
V
A
VGES
Gate to Emitter Voltage
Pulsed Collector Current
± 30
@ TC = 25oC
ICpulse(1)
*
160
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
IC pulse(2)
*
Pulsed Collector Current
220
A
Maximum Power Dissipation
149
60
W
W
V
PD
Maximum Power Dissipation
VRRM
IF(AV)
IFSM
Peak Repetitive Reverse Voltage of Diode
Average Rectified Forward Current of diode @ TC = 100oC
330
10
A
Non-repetitive Peak Surge Current of diode
60Hz Single Half-Sine wave
100
A
TJ, Tstg
TL
Operating Junction Temperature and Storage Temperrature
-55 to +150
300
oC
oC
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.84
1.57
40
Units
oC/W
oC/W
oC/W
RθJC(IGBT)
RθJC(Diode)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
--
--
--
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D< 0.01, pluse width < 5usec
*I _pulse limited by max Tj
C
©2008 Fairchild Semiconductor Corporation
FGA70N33BTD Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Max Qty
Packaging
Type
Device Marking
Device
Package
Qty per Tube
per Box
FGA70N33BTD
FGA70N33BTDTU
TO-3P
Tube
30ea
--
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
330
--
--
--
--
V
∆BVCES
∆TJ
/
Temperature Coefficient of Breakdown
V
GE = 0V, IC = 250uA
0.3
V/oC
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
250
µA
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
2.3
--
3.3
1.1
4.3
--
V
V
I
C = 20A, VGE = 15V
IC = 40A, VGE = 15V,
--
--
1.4
1.7
--
--
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
I
I
C = 70A, VGE = 15V, TC = 25oC
C = 70A, VGE = 15V,
--
1.8
--
V
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
1380
140
60
--
--
--
pF
pF
pF
V
CE = 30V VGE = 0V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
td(on)
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
--
13
26
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
V
R
CC = 200V, IC = 20A,
G = 5Ω, VGE = 15V,
Resistive Load, TC = 25oC
Rise Time
Turn-Off Delay Time
Fall Time
46
198
13
Turn-On Delay Time
Rise Time
V
CC = 200V, IC = 20A,
G = 5Ω, VGE = 15V,
Resistive Load, TC = 125oC
28
R
Turn-Off Delay Time
Fall Time
48
268
49
Qg
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V
V
CE = 200V, IC = 20A,
GE = 15V
Qge
Qgc
6.8
17.5
2
www.fairchildsemi.com
FGA70N33BTD Rev. A
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.1
0.95
23
Max Units
T
C = 25oC
C = 125oC
--
--
--
--
--
--
--
--
1.5
VFM
Diode Forward Voltage
IF = 10A
V
T
--
TC = 25oC
TC = 125oC
--
trr
Diode Reverse Recovery Time
ns
36
--
T
C = 25oC
TC = 125oC
C = 25oC
TC = 125oC
2.8
5.1
32
--
IF =10A, dI/dt = 200A/µs
Irr
Diode Peak Reverse Recovery
Current
A
--
T
--
Qrr
Diode Reverse Recovery Charge
nC
91
--
3
www.fairchildsemi.com
FGA70N33BTD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
220
220
TC = 25oC
20V
TC = 125oC
20V
12V
15V
176
176
15V
10V
132
132
12V
88
44
0
88
8V
10V
44
0
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Figure 4. Transfer Characteristics
Characteristics
220
220
Common Emitter
VGE = 15V
TC = 25oC
176
Common Emitter
Vce = 20V
Tc=25oC
176
Tc=125oC
132
TC = 125oC
132
88
44
0
88
44
0
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
16
Gate-Emitter Voltage, Vge [V]
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
2.0
1.8
1.6
1.4
1.2
1.0
0.8
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
70A
16
12
8
40A
40A
70A
4
IC = 20A
IC = 20A
4
0
25
50
75
100
125
150
0
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
4
www.fairchildsemi.com
FGA70N33BTD Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
20
10000
Common Emitter
TC = 125oC
Common Emitter
VGE = 0V, f = 1MHz
16
12
8
TC = 25oC
Cies
1000
Coes
Cres
100
40A
8
4
70A
IC = 20A
4
0
10
0
12
16
20
1
10
30
Gate-Emitter Voltage, VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
15
500
Common Emitter
TC = 25oC
10µs
100
10
12
VCC = 100V
100µs
9
1ms
200V
10ms
1
6
3
0
DC
Single Nonrepetitive
o
Pulse T = 25 C
C
0.1
Curves must be derated
linearly with increase
in temperature
0.01
0
10
20
30
40
50
60
0.1
1
10
100
400
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Gate Resistance
200
1000
100
tf
tr
td(off)
100
td(on)
10
Common Emitter
VCC = 200V, VGE = 15V
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
IC = 20A
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
1
10
0
15
30
45
60
0
15
30
45
60
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
5
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FGA70N33BTD Rev. A
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 14. Turn-off Characteristics vs.
Collector Current
Collector Current
1000
1000
Common Emitter
tf
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
tr
100
100
td(off)
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
10
10
td(on)
TC = 125oC
1
1
20
20
30
40
50
60
70
30
40
50
60
70
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
1000
3000
Eoff
Eoff
1000
Eon
100
Eon
100
Common Emitter
VCC = 200V, VGE = 15V
Common Emitter
10
10
1
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
IC = 20A
TC = 25oC
TC = 125oC
1
0
10
20
30
40
50
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100
10
1
400
TC = 125oC
100
TC = 25oC
10
TC = 25oC
Safe Operating Area
VGE = 15V, TC = 125oC
TC = 125oC
1
1
10
100
600
0
0.5
1.0
1.5
2.0
2.5
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
6
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FGA70N33BTD Rev. A
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
4
60
200A/µs
3
45
200A/µs
2
30
15
0
di/dt = 100A/µs
di/dt = 100A/µs
1
0
10
20
30
40
5
10
20
30
40
5
Forward Current, IF [A]
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
40
30
200A/µs
di/dt = 100A/µs
20
10
5
10
20
30
40
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
single pulse
0.01
1E-3
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
7
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FGA70N33BTD Rev. A
Mechanical Dimensions
TO-3P
Dimensions in Millimeters
8
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FGA70N33BTD Rev. A
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Product Status
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Datasheet contains the design specifications for product development. Specifications may
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Full Production
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Not In Production
Rev. I37
9
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FGA70N33BTD Rev. A
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