FGA90N30D [FAIRCHILD]
300V PDP IGBT; 300V IGBT PDP
| 型号： | FGA90N30D |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 300V PDP IGBT |
| 文件： | 总9页 (文件大小：833K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2006
FGA90N30D
300V PDP IGBT
Features
Description
•
•
•
High Current Capability
Employing Unified IGBT Technology, FGA90N30D provides low
conduction and switching loss. FGA90N30D offers the optimum
solution for PDP applications where low condution loss is
essential.
Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 20A
High Input Impedance
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
Description
FGA90N30D
Units
V
VCES
VGES
IC
ICM
IF
Collector-Emitter Voltage
300
± 30
Gate-Emitter Voltage
V
Collector Current
@ TC
@ TC
=
=
25°C
25°C
90
A
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
220
A
@ TC = 100°C
10
A
IFM
PD
40
A
@ TC
=
25°C
219
W
W
°C
°C
°C
@ TC = 100°C
87
TJ
-55 to +150
-55 to +150
300
Tstg
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
Parameter
Typ.
Max.
Units
°C/W
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
--
0.57
°C/W
--
--
1.56
40
RθJA
Thermal Resistance, Junction-to-Ambient
°C/W
©2006 Fairchild Semiconductor Corporation
FGA90N30D Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA90N30D
FGA90N30D
TO-3P
--
--
30
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250μA
GE = 0V, IC = 250μA
300
--
--
--
--
V
ΔBVCES
ΔTJ
/
Temperature Coefficient of Breakdown
Voltage
V
0.6
V/°C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
100
μA
± 250
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250uA, VCE = VGE
V
V
V
2.5
--
4.0
1.1
5.0
1.4
IC = 20A, VGE = 15V
IC = 90A, VGE = 15V
--
--
1.9
2.0
--
--
VCE(sat)
Collector to Emitter
Saturation Voltage
I
C = 90A, VGE = 15V,
C = 125°C
V
T
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
1700
290
80
-
-
-
pF
pF
pF
V
CE = 30V VGE = 0V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
30
200
110
140
0.15
0.45
0.6
--
--
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
--
ns
VCC = 200V, IC = 20A,
RG = 10Ω, VGE = 15V,
300
--
ns
Resistive Load, TC = 25°C
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
--
--
30
--
210
110
200
0.16
0.72
0.88
87
--
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
--
ns
V
R
CC = 200V, IC = 20A,
G = 10Ω, VGE = 15V,
--
ns
Resistive Load, TC = 125°C
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
--
mJ
mJ
mJ
nC
nC
nC
--
--
VCE = 200V, IC = 20A,
130
18
57
V
GE = 15V
Qge
Qgc
12
38
2
www.fairchildsemi.com
FGA90N30D Rev. A
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VFM
Diode Forward Voltage
IF = 10A
TC
TC = 125°C
TC 25°C
TC = 125°C
TC 25°C
TC = 125°C
TC 25°C
TC = 125°C
=
25°C
--
--
--
--
--
--
--
--
1.1
0.9
21
1.4
--
V
ns
A
trr
Diode Reverse Recovery Time
IF = 10A
dI/dt = 200A/μs
=
--
35
--
Irr
Diode Peak Reverse Recovery Cur-
rent
=
2.8
5.6
29.4
98
--
--
Qrr
Diode Reverse Recovery Charge
=
--
nC
--
3
www.fairchildsemi.com
FGA90N30D Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure2. TypicalOutputCharacteristics
1 0 0
10 0
= C
25o
T C
= C
1 2 5 o
T C
2 0V
15V
2 0 V
1 5 V
12V
1 2 V
1 0 V
8 0
6 0
4 0
2 0
0
8 0
6 0
4 0
2 0
0
10V
V G E
= 8 V
V G E
= 8 V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
C o llector-E m itte r V o lta ge, V C E [V ]
C o lle c to r-E m itte r V o lta g e , V C E [V ]
Figure3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer characteristics
C om m on E m itte r
C o m m o n E m itte r
V G e
=
15V
V C E
=
2 0 V
2 5 o
1 2 5 o
80
60
40
20
0
1 0 0
1 0
1
T c
=
2 5o C
=
12 5o C
T C
T C
=
C
T c
=
C
0
1
2
3
0
2
4
6
8
1 0
G a te -E m itte r V o lta g e , V G E [V ]
C o lle cto r-E m itte r V o lta g e , V C E [V ]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
6
5
4
3
2
1
0
2 .4
2 .2
2 .0
1 .8
1 .6
1 .4
1 .2
1 .0
0 .8
0 .6
0 .4
C o m m o n E m itte r
C o m m o n E m itte r
T C
= C
2 5 o
V G
= 1 5 V
E
9 0 A
4 0 A
2 0 A
9 0 A
4 0 A
2 0 A
Ic
=
1 0 A
1 0 A
2 5
5 0
7 5
1 0 0
o C )
1 2 5
4
8
1 2
1 6
2 0
C a s e T e m p e ra tu re , T C
(
G a te - E m itte r V o lta g e , V G E [V ]
4
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FGA90N30D Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Charaacteristics
GE
6
C o m m o n E m itte r
T C
1 2 5 o
=
C
5
4
3
2
1
0
C ie s
1 0 0 0
C o e s
C re s
9 0 A
2 0 A
4 0 A
C o m m o n E m itte r
V G E 0 V , 1 M H z
T C
2 5 o
1 0 0
1 0 A
=
f =
=
C
4
8
1 2
1 6
2 0
0 .1
1
1 0
C o lle c to r-E m itte r V o lta g e , V C E [V ]
G a te - E m itte r V o lta g e , V G E [V ]
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
1 5
C o m m o n E m itte r
Ic MAX (Pulsed)
50μs
R L
=
1 0 o h m
2 5 o
100
10
T C
=
C
100μs
Ic MAX (Continuous)
1m s
1 0
DC O peration
V c c
= 2 0 0 V
1
5
Single Nonrepetitive
= C
25o
0.1
0.01
Pulse Tc
Curves m ust be derated
linearly with increase
in tem perature
0
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
9 0
0.1
1
10
100
1000
G ate C harge, Q g [nC ]
Collector - Em itter Voltage, VCE [V]
Figure 11. Turn-On Characteristics vs. Gate
Resistance
Figure12.Turn-Of f C h a r a c t e r i s t i c s v s . G a t e
Resistance
1 0 0 0
1 0 0 0
C om m o n E m itte r
V C
=
20 0 V , V G
= 1 5 V
C
E
IC
=
2 0A
25 o
T C
T C
=
C
=
12 5 o
C
tr
tf
1 0 0
1 0 0
td (o ff)
td (o n )
C o m m o n E m itte r
V C
=
2 0 0 V , V G
= 1 5 V
C
E
IC
=
2 0 A
2 5 o
T C
T C
=
C
=
1 2 5 o
C
1 0
1 0
0
2 0
4 0
6 0
8 0
1 0 0
0
2 0
4 0
6 0
8 0
1 0 0
G a te R e s is ta n c e , R G [Ω ]
G a te R e s is ta n c e , R G [Ω ]
5
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FGA90N30D Rev. A
Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Figure14.Turn-OffCharacteristicsvs.
Collector Current
1 0 0 0
1 0 0 0
C o m m o n E m itte r
V G E
=
1 5 V , R G
2 5 o
1 2 5 o
=
1 0 Ω
T C
T C
=
C
tf
=
C
tr
1 0 0
1 0 0
td (o ff)
td (o n )
C o m m o n E m itte r
V G E
=
1 5 V , R G
2 5 o
1 2 5 o
= 1 0 Ω
T C
T C
=
C
=
C
1 0
1 0
0
2 0
4 0
6 0
8 0
1 0 0
0
2 0
4 0
6 0
8 0
1 0 0
C o lle c to r C u rre n t , Ic [A ]
C o lle c to r C u rre n t , Ic [A ]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16.Switching Loss vs. Collector Current
1 0
1
E o ff
1
E o ff
E o n
0 .1
0 .1
C o m m o n E m itte r
V C C
= 2 0 0 V , V G E = 1 5 V
C o m m o n E m itte r
IC
=
2 0 A
2 5 o
E o n
V G
T C
T C
= 1 5 V , R G = 1 0 Ω
E
=
2 5 o
C
T C
T C
=
C
1 2 5 o
C
=
1 2 5 o
C
=
0 .0 1
0 .0 1
0
2 0
4 0
6 0
8 0
1 0 0
0
2 0
4 0
6 0
8 0
1 0 0
C o lle c to r C u rre n t , Ic [A ]
G a te R e s is ta n c e , R G [Ω ]
Figure 17. Turn-Off SOA Figure
1000
Safe Operating Area
VGE = 20V, TC = 100o
C
100
10
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
6
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FGA90N30D Rev. A
Typical Performance Characteristics (Continued)
Figure 18. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
Pdm
0.01
t1
t2
single pulse
1E-4
Duty factor D = t1 / t2
Peak Tj = Pdm
1
× Zthjc + T
C
1E-3
1E-5
1E-3
0.01
0.1
10
Rectangular Pulse Duration [sec]
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Recovery
Current
100
5
4
3
2
1
0
IF = 10A
TC = 25oC
TJ = 125oC
10
TJ = 25o
C
1
TC
=
25oC
TC = 125oC
0.1
100
500
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage , VF [V]
di/dt [A/μs]
Figure 21. Typical Reverse Recovery Time
36
IF = 10A
Tc = 25oC
32
28
24
100
500
di/dt [A/μs]
7
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FGA90N30D Rev. A
Mechanical Dimensions
TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20
9.60 ±0.20
+0.15
ø3.20 ±0.10
1.50
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
1.40 ±0.20
+0.15
–0.05
0.60
5.45TYP
5.45TYP
[5.45 ±0.30]
[5.45 ±0.30]
8
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FGA90N30D Rev. A
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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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As used herein:
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(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
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