FDPF51N25 [FAIRCHILD]
FDPF51N25;
| 型号： | FDPF51N25 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | FDPF51N25 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：886K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2006
UniFETTM
FDPF51N25
28A, 250V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
RDS(on) = 0.060 Ω @ VGS = 10 V
Low gate charge ( typical 55 nC)
Low Crss ( typical 63 pF)
Fast switching
These N-Channel enhancement mode power field effect
transistorsare produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
100% avalanche tested
Improved dv/dt capability
D
G
S
G
D
TO-220F
S
FDPF Series
Absolute Maximum Ratings
Symbol
Parameter
FDPF51N25
Unit
VDSS
Drain-Source Voltage
Drain Current
250
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
28
16.8
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
112
±30
1111
28
A
V
VGSS
EAS
IAR
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
11.7
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
117
W
- Derate above 25°C
0.93
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
1.07
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
--
--
62.5
©2006 Fairchild Semiconductor Corporation
FDPF51N25 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF51N25
FDPF51N25
TO-220F
-
-
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
250
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
0.25
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 14A
VDS = 40V, ID = 14A
3.0
--
--
0.048
43
5.0
0.060
--
V
Ω
S
Static Drain-Source
On-Resistance
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
2620
530
63
3410
690
90
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 125V, ID = 51A
RG = 25Ω
--
--
--
--
--
--
--
62
465
98
135
940
205
270
70
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
130
55
ns
Qg
VDS = 200V, ID = 51A
VGS = 10V
nC
nC
nC
Qgs
Qgd
16
--
27
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
51
204
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 28A
--
V
VGS = 0V, IS = 51A
178
4.0
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.27mH, I = 28A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 28A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
www.fairchildsemi.com
FDPF51N25 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
101
100
Bottom : 5.5 V
150oC
25oC
-55oC
* Notes :
1. VDS = 40V
*Notes :
1. 250μs Pulse Test
2. TC = 25oC
2. 250μs Pulse Test
-1
10
100
101
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.14
0.12
0.10
VGS = 10V
0.08
150oC
VGS = 20V
*Notes :
1. VGS = 0V
25oC
0.06
2. 250μs Pulse Test
* Note : TJ = 25oC
0.04
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
6000
12
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
10
8
VDS = 50V
VDS = 125V
VDS = 200V
Coss
4000
2000
0
C
iss
6
4
* Note:
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
* Note : ID = 51A
0
10-1
100
101
0
10
20
30
40
50
60
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3
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FDPF51N25 Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
3.0
2.5
2.0
1.5
1.2
1.1
1.0
1.0
* Notes :
1. VGS = 0 V
0.9
* Notes :
1. VGS = 10 V
0.5
2. ID = 250 μA
2. ID = 25.5 A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
103
60
50
40
30
20
10
0
10 μs
102
100 μs
1 ms
10 ms
101
100 ms
DC
Operation in This Area
is Limited by R DS(on)
100
* Notes :
1. TC = 25 o
2. TJ = 150 o
C
10-1
C
3. Single Pulse
10-2
100
101
102
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
D = 0 . 5
0 . 2
- 1
1 0
PDM
0 . 1
t1
t2
0 . 0 5
- 2
* N o te s
1 . C ( t)
2 . D u ty F a c t o r ,
:
0 . 0 2
0 . 0 1
1 0
Z
=
0 . 3 9 o C /W
M
a x .
θ
J
D
=
t1 / t2
3 .
T
-
T
=
P
*
Z
C ( t)
θ J
J
M
C
D
M
s in g le p u ls e
- 5
- 4
- 3
- 2
- 1
0
1
1 0
1 0
1 0
1 0
1 0
1 0
1 0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
4
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FDPF51N25 Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
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FDPF51N25 Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
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FDPF51N25 Rev. A
Mechanical Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
7
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FDPF51N25 Rev. A
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As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
8
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FDPF51N25 Rev. A
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