FDPF55N06 [FAIRCHILD]
60V N-Channel MOSFET; 60V N沟道MOSFET
| 型号： | FDPF55N06 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总10页 (文件大小：1180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
UniFET
FDP55N06/FDPF55N06
60V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V
Low gate charge ( typical 30 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D
S
G
D S
S
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
VDSS
Parameter
FDP55N06
FDPF55N06
Units
V
Drain-Source Voltage
60
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
55
55 *
34.8 *
220 *
A
34.8
220
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
IAR
Gate-Source Voltage
± 25
480
55
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
11.4
4.5
mJ
V/ns
W
dv/dt
PD
114
0.9
48
- Derate above 25°C
Operating and Storage Temperature Range
0.4
W/°C
°C
TJ, TSTG
TL
-55 to +150
300
Maximum lead temperature for soldering purposes,
°C
1/8∀ from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
Parameter
FDP55N06
FDPF55N06
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
1.1
0.5
2.58
--
RθJS
RθJA
62.5
62.5
©2005 Fairchild Semiconductor Corporation
FDP55N06/FDPF55N06 Rev. A
1
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Package Marking and Ordering Information
Device Marking
FDP55N06
Device
FDP55N06
FDPF55N06
Package
TO-220
Reel Size
Tape Width
Quantity
50
50
FDPF55N06
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
--
V
∆BVDSS
∆TJ
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
0.05
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250 µA
2.0
--
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 27.5 A
0.018
0.022
Ω
gFS
Forward Transconductance
VDS = 25 V, ID = 27.5 A
(Note 4)
--
33
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
1160
375
60
1510
490
90
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 30 V, ID = 55 A,
RG = 25 Ω
--
--
--
--
--
--
--
ns
ns
30
130
70
65
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
265
150
195
ns
(Note 4, 5)
ns
95
Qg
VDS = 48 V, ID = 55A,
VGS = 10 V
nC
nC
nC
30
37
--
Qgs
Qgd
6.5
7.5
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
55
220
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 55 A
--
V
VGS = 0 V, IS = 55 A,
40
55
ns
µC
dIF / dt = 100 A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, I = 55A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 55A, di/dt ≤ 200A/µs, V ≤ BV Starting T = 25°C
DSS, J
SD
DD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2
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FDP55N06/FDPF55N06 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
102
101
100
102
101
100
150oC
Bottom : 4.5 V
25oC
-55oC
*
Notes :
1. VDS = 30V
*
Notes :
1. 250µs Pulse Test
2. 250µs Pulse Test
2. TC = 25oC
101
10-1
100
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.05
0.04
102
150oC
101
25oC
0.03
VGS = 10V
VGS = 20V
* Notes :
1. VGS = 0V
0.02
* Note : T = 25oC
2. 250µs Pulse Test
J
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
200
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
2500
2000
1500
1000
500
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
8
Coss
VDS = 30V
VDS = 48V
C
iss
6
*
Note :
1. VGS = 0 V
4
2. f = 1 MHz
C
rss
2
* Note : ID = 55A
25
0
0
10-1
100
101
0
5
10
15
20
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDP55N06/FDPF55N06 Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
* Notes :
1. VGS = 0 V
* Notes :
1. VGS = 10 V
2. ID = 250 µA
2. ID = 27.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 9-1. Maximum Safe Operating Area
for FDP55N06
Figure 9-2. Maximum Safe Operating Area
for FDPF55N06
103
103
10 µs
10 µs
102
102
100 µs
100 µs
1 ms
1 ms
10 ms
10 ms
101
101
100 ms
DC
DC
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
100
100
* Notes :
* Notes :
1. TC = 25 oC
1. TC = 25 oC
-1
10
-1
10
2. TJ = 150 oC
2. T = 150 oC
J
3. Single Pulse
3. Single Pulse
-2
-2
10
10
100
101
102
100
101
2
10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
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FDP55N06/FDPF55N06 Rev. A
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
100
10-1
10-2
D=0.5
0.2
0.1
0.05
0.02
0.01
*
Notes :
1. Z? JC(t) = 1.1 oC/W Max.
2. Duty Factor, D=t1/t2
single pulse
10-3
3. TJM - TC = PDM * Z? JC(t)
10-5
10-4
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
*
Notes :
1. Z? JC(t) = 2.58 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
single pulse
10-3
10-2
10-5
10-4
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
5
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FDP55N06/FDPF55N06 Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FDP55N06/FDPF55N06 Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FDP55N06/FDPF55N06 Rev. A
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
8
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FDP55N06/FDPF55N06 Rev. A
Mechanical Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
9
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FDP55N06/FDPF55N06 Rev. A
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As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
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