FDPF5N50FT [FAIRCHILD]
N-Channel MOSFET, FRFET 500V, 4.5A, 1.55ヘ; N沟道MOSFET ， FRFET 500V ， 4.5A ， 1.55ヘ
| 型号： | FDPF5N50FT |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel MOSFET, FRFET 500V, 4.5A, 1.55ヘ |
| 文件： | 总10页 (文件大小：808K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2007
UniFETTM
tm
FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A
Low gate charge ( Typ. 11nC)
Low Crss ( Typ. 5pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D S
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP5N50F FDPF5N50FT Units
Drain to Source Voltage
Gate to Source Voltage
500
±30
V
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
4.5
2.7
18
4.5*
2.7*
18*
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
233
4.5
8.5
4.5
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
(TC = 25oC)
- Derate above 25oC
85
28
PD
Power Dissipation
0.67
0.22
W/oC
oC
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP5N50F FDPF5N50FT
Units
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case
1.4
0.5
4.5
-
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
oC/W
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP5N50F / FDPF5N50FT Rev. A1
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP5N50F
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP5N50F
FDPF5N50FT
-
-
-
-
50
50
FDPF5N50FT
TO-220F
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V, TJ = 25oC
500
-
-
-
-
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250µA, Referenced to 25oC
0.6
V/oC
V
DS = 500V, VGS = 0V
-
-
-
-
-
-
10
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
µA
VDS = 400V, TC = 125oC
100
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.25A
VDS = 20V, ID = 2.25A
3.0
-
-
5.0
1.55
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
1.25
4.3
(Note 4)
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
490
66
5
650
88
7.5
15
-
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
11
3
V
V
DS = 400V, ID = 5A
GS = 10V
Qgd
Gate to Drain “Miller” Charge
-
5
-
nC
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
13
22
28
20
36
54
66
50
ns
ns
ns
ns
VDD = 250V, ID = 5A
G = 25Ω
R
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
4.5
18
1.5
-
A
A
ISM
VSD
trr
-
-
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 4.5A
V
65
ns
µC
VGS = 0V, ISD = 5A
dIF/dt = 100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
0.120
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =23 mH, I = 4.5A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3:
I
≤ 4.5A, di/dt ≤ 200A/µs, V ≤ BV , Starting T = 25°C
SD
DD
DSS J
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDP5N50F / FDPF5N50FT Rev. A1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
20
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
10
5.5 V
150oC
1
25oC
1
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
0.1
2. 250µs Pulse Test
0.04
0.1
0.1
1
10
4
5
6
7
8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.2
2.0
50
10
150oC
1.8
VGS = 10V
25oC
VGS = 20V
1.6
1
1.4
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
2. 250µs Pulse Test
1.2
0.2
0.0
0
4
8
12
16
20
0.4
0.8
1.2
1.6
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 100V
= C + C
ds gd
oss
rss
VDS = 250V
= C
gd
8
6
4
2
0
VDS = 400V
750
500
250
0
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Coss
Crss
*Note: ID = 5A
9
30
0.1
1
10
0
3
6
12
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FDP5N50F / FDPF5N50FT Rev. A1
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDP5N50F
1.2
1.1
1.0
30
30µs
100µs
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
0.1
0.01
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.9
*Notes:
1. VGS = 0V
2. ID = 250µA
3. Single Pulse
0.8
-75
-25
25
75
125
175
1
10
100
1000
TJ, Junction Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
- FDPF5N50FT
Figure 10. Maximum Drain Current
30
5
30µs
100µs
10
4
2
0
1ms
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
0.01
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
100
1
10
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve - FDP5N50F
3
1
0.5
0.2
0.1
PDM
0.1
0.05
t1
0.02
0.01
t2
*Notes:
1. ZθJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
0.003
10-5
10-4
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FDP5N50F / FDPF5N50FT Rev. A1
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF5N50FT
10
1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
0.1
t2
*Notes:
1. ZθJC(t) = 4.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
0.005
10-5
10-4
10-3
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FDP5N50F / FDPF5N50FT Rev. A1
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDP5N50F / FDPF5N50FT Rev. A1
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D
U
T
V
D
S
_
I
S
D
L
D
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r
R
G
S
a
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V
a
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D
U
T
D
D
V
G
S
•
d
v
/ d
c
t
c
o
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t r o l l e
d
b
y
R
G
•
I S
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p
u
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e
p
e
r i o
d
D
G
a
t e
P
u
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e
W
i d t h
V
- - - - - - - - - - - - - - - - - - - - - - - - - -
D
=
G
S
G
a
t e
P
u
l s
e
P
e
r i o
d
1
0
V
(
D
r i v
e
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)
I F
,
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
C
u
r r e
n
t
M
I
S
D
d
i / d
t
(
D
U
T
)
I R
d
M
B
o
d
y
D
e
i o
R
e
R
e
v
e
r s
d
e
C
u
r r e
n
t
V
D
S
(
D
U
T
)
B
o
d
y
S
D
i o
d
e
c
o
v
e
r y
v
/ d
t
V
V
D
D
D
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
V
o
l t a
e
D
r o
www.fairchildsemi.com
FDP5N50F / FDPF5N50FT Rev. A1
7
Mechanical Dimensions
TO-220
www.fairchildsemi.com
FDP5N50F / FDPF5N50FT Rev. A1
8
Mechanical Dimensions
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
(30
°
)
#1
0.35 0.10
2.54TYP
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
[2.54 0.20
]
[2.54 0.20]
9.40 0.20
Dimensions in Millimeters
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FDP5N50F / FDPF5N50FT Rev. A1
9
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when properly used in accordance with instructions for use
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I32
FDP5N50F / FDPF5N50FT Rev. A1
10
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