FDPF5N50 [FAIRCHILD]
N-Channel MOSFET 500V, 5A, 1.4ヘ; N沟道MOSFET 500V ，5A， 1.4ヘ
| 型号： | FDPF5N50 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel MOSFET 500V, 5A, 1.4ヘ |
| 文件： | 总10页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2007
UniFETTM
FDP5N50 / FDPF5N50
tm
N-Channel MOSFET
500V, 5A, 1.4Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A
Low gate charge ( Typ. 11nC)
Low Crss ( Typ. 5pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D S
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP5N50
FDPF5N50
Units
Drain to Source Voltage
Gate to Source Voltage
500
±30
V
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
5
3
5*
3*
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
20
20*
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
225
5
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.5
4.5
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
85
28
PD
Power Dissipation
0.67
0.22
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP5N50
FDPF5N50
Units
RθJC
RθCS
RθJA
Thermal Resistance, Junction to Case
1.4
0.5
4.5
-
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
oC/W
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP5N50 / FDPF5N50 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP5N50
Device
FDP5N50
FDPF5N50
Package
TO-220
Reel Size
Tape Width
Quantity
-
-
-
-
50
50
FDPF5N50
TO-220F
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TJ = 25oC
500
-
-
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250μA, Referenced to 25oC
0.6
V/oC
V
DS = 500V, VGS = 0V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 400V, TC = 125oC
10
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
VGS = 10V, ID = 2.5A
VDS = 20V, ID = 2.5A
3.0
-
-
5.0
1.4
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
1.15
4.3
(Note 4)
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
480
66
5
640
88
8
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
11
3
15
-
V
V
DS = 400V, ID = 5A
GS = 10V
Qgd
Gate to Drain “Miller” Charge
-
5
-
nC
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
13
22
28
20
36
54
66
50
ns
ns
ns
ns
VDD = 250V, ID = 5A
G = 25Ω
R
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
5
20
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 5A
-
V
300
1.8
ns
μC
VGS = 0V, ISD = 5A
dIF/dt = 100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 18mH, I = 5A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3:
I
≤ 5A, di/dt ≤ 200A/μs, V ≤ BV , Starting T = 25°C
SD
DD
DSS J
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
20
VGS = 15.0V
10.0V
10
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
150oC
25oC
1
1
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
0.1
2. 250μs Pulse Test
0.04
0.1
0.1
1
10
30
4
5
6
7
8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
3.0
70
2.5
150oC
10
VGS = 10V
2.0
25oC
VGS = 20V
1.5
*Notes:
1. VGS = 0V
*Note: TJ = 25oC
2. 250μs Pulse Test
1
0.4
1.0
0.8
1.2
1.6
0
3
6
9
12
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
VDS = 100V
VDS = 250V
VDS = 400V
8
= C + C
ds gd
oss
rss
= C
gd
750
500
250
0
*Note:
1. VGS = 0V
2. f = 1MHz
6
4
2
Ciss
Coss
Crss
*Note: ID = 5A
0
0.1
1
10
30
0
4
8
12
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
3.0
1.2
2.5
2.0
1.5
1.1
1.0
0.9
1.0
*Notes:
*Notes:
1. VGS = 10V
1. VGS = 0V
0.5
-75
2. ID = 2.5A
2. ID = 250μA
0.8
-75
-25
25
75
125 175
-25
25
75
125
175
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
- FDP5N50
Figure 10. Maximum Safe Operating Area
- FDPF5N50
30
30
30μs
30μs
100μs
1ms
10
10
100μs
1ms
10ms
10ms
DC
1
1
DC
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
0.1
0.01
0.1
0.01
*Notes:
1. TC = 25oC
2. TJ = 150oC
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
3. Single Pulse
100
1
10
100
800
1
10
800
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current
vs. Case Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [oC]
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDP5N50
3
1
0.5
0.2
PDM
0.1
1
t
t2
0.1
0.05
*Notes:
1. ZθJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
Figure 13. Transient Thermal Response Curve - FDPF5N50
10
1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.1
0.01
*Notes:
0.01
1. ZθJC(t) = 4.5oC/W Max.
2. Duty Factor, D= t1/t2
Single pulse
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D
U
T
V
D
S
_
I
S
D
L
D
r i v
e
r
R
G
S
a
m
e
T
y
p
e
V
a
s
D
U
T
D
D
V
G
S
•
d
v
/ d
c
t
c
o
n
t r o l l e
d
b
y
R
G
•
I S
o
n
t r o l l e
d
b
y
p
u
l s
e
p
e
r i o
d
D
G
a
t e
P
u
l s
e
W
i d t h
V
- - - - - - - - - - - - - - - - - - - - - - - - - -
D
=
G
S
G
a
t e
P
u
l s
e
P
e
r i o
d
1
0
V
(
D
r i v
e
r
)
I F
,
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
C
u
r r e
n
t
M
I
S
D
d
i / d
t
(
D
U
T
)
I R
d
M
B
o
d
y
D
e
i o
R
e
R
e
v
e
r s
d
e
C
u
r r e
n
t
V
D
S
(
D
U
T
)
B
o
d
y
S
D
i o
d
e
c
o
v
e
r y
v
/ d
t
V
V
D
D
D
B
o
d
y
D
i o
d
e
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
7
Mechanical Dimensions
TO-220
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
8
Mechanical Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
9
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when properly used in accordance with instructions for use
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I32
www.fairchildsemi.com
FDP5N50 / FDPF5N50 Rev. A
10
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