FDPF51N25RDTU [FAIRCHILD]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | FDPF51N25RDTU |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总10页 (文件大小：2957K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2008
UniFETTM
FDP51N25 / FDPF51N25
250V N-Channel MOSFET
Features
Description
•
•
•
•
•
51A, 250V, RDS(on) = 0.06Ω @VGS = 10 V
Low gate charge ( typical 55 nC)
Low Crss ( typical 63 pF)
Fast switching
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Improved dv/dt capability
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D
S
G
D S
S
Absolute Maximum Ratings
Symbol
Parameter
FDP51N25 FDPF51N25
Unit
VDSS
Drain-Source Voltage
Drain Current
250
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
51
30
51*
30*
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
204
204*
VGSS
EAS
IAR
Gate-Source voltage
± 30
1111
51
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
32
mJ
V/ns
4.5
Power Dissipation
(TC = 25°C)
- Derate above 25°C
320
3.7
38
0.3
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP51N25 FDPF51N25
Unit
°C/W
°C/W
°C/WJ
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.39
0.5
3.3
--
RθCS
RθJA
62.5
62.5
©2008 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
Package Marking and Ordering Information
Device Marking
FDP51N25
Device
FDP51N25
FDPF51N25
Package
TO-220
Reel Size
Tape Width
Quantity
-
-
-
-
50
50
FDPF51N25
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
D = 250μA, Referenced to 25°C
250
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
0.25
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
DS = 200V, TC = 125°C
--
--
--
--
1
10
μA
μA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
3.0
--
--
0.048
43
5.0
0.060
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 25.5A
gFS
Forward Transconductance
VDS = 40V, ID = 25.5A
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
2620
530
63
3410
690
90
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 125V, ID = 51A
RG = 25Ω
--
--
--
--
--
--
--
62
465
98
135
940
205
270
70
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
130
55
ns
Qg
VDS = 200V, ID = 51A
nC
nC
nC
V
GS = 10V
Qgs
Qgd
16
--
27
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
51
204
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 51A
--
V
VGS = 0V, IS = 51A
178
4.0
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.68mH, I = 51A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 51A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
Bottom : 5.5 V
150oC
25oC
101
-55oC
* Notes :
1. VDS = 40V
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
2. 250μs Pulse Test
100
10-1
100
101
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.14
0.12
102
0.10
VGS = 10V
101
0.08
VGS = 20V
150oC
0.06
25oC
* Notes :
1. VGS = 0V
o
0.04
2. 250μs Pulse Test
* Note : TJ = 25 C
100
0.2
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
Ciss = Cgs + Cgd (Cds = shorted)
10
Coss = Cds + Cgd
Crss = Cgd
VDS = 50V
VDS = 125V
8
6
4
2
0
VDS = 200V
Coss
4000
2000
0
C
iss
* Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
* Note : ID = 51A
50
0
10
20
30
40
60
10-1
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
0.8
* Notes :
1. VGS = 10 V
2. ID = 250 μA
2. ID = 25.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
for FDP51N25
Figure 9-2. Maximum Safe Operating Area
for FDPF51N25
10 μs
102
102
10 μs
100 μs
100 μs
1 ms
1 ms
10 ms
10 ms
100 ms
101
101
Operation in This Area
is Limited by R DS(on)
DC
100 ms
Operation in This Area
is Limited by R DS(on)
DC
100
10-1
10-2
100
10-1
10-2
* Notes :
1. TC = 25 o
2. TJ = 150 o
* Notes :
C
1. TC = 25 o
2. TJ = 150 o
C
C
C
3. Single Pulse
3. Single Pulse
100
101
102
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP51N25
D=0.5
10-1
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
10-2
* Notes :
1. ZθJC(t) = 0.39 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
10-3
10-5
10-4
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF51N25
D=0.5
100
0.2
0.1
PDM
0.05
t1
10-1
t2
0.02
* Notes :
1. ZθJC(t) = 3.3 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
single pulse
10-3
10-2
10-5
10-4
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
5
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
Mechanical Dimensions
TO-220
A
B
1.321
1.271
2.810
2.710
10.36
10.16
8.680
8.580
3.861
3.811
6.340
6.240
7°
12.840
12.740
15.002
14.952
8.712
8.662
3.78
3.68
5°-7
5°-7
2.680
2.630
1.20 MIN
13.75
13.65
1.35
1.25
0.432
0.382
0.888
0.788
0.05
A
B
2.54
5.08
5-7
4.597
4.547
Dimensions in Millimeters
8
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
Mechanical Dimensions (Continued)
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
9
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
PDP SPM™
Power-SPM™
PowerTrench
The Power Franchise
®
®
SM
Programmable Active Droop™
TinyBoost™
TinyBuck™
®
QFET
Current Transfer Logic™
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
®
TinyLogic
®
EcoSPARK
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
EfficentMax™
EZSWITCH™ *
™
SMART START™
®
SPM
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
SyncFET™
®
®
®
Fairchild
UHC
®
Fairchild Semiconductor
FACT Quiet Series™
Ultra FRFET™
UniFET™
VCX™
®
®
FACT
®
®
FAST
OPTOPLANAR
VisualMax™
®
FastvCore™
FlashWriter
®
*
tm
®
* EZSWITCH™ and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I35
10
www.fairchildsemi.com
FDP51N25 / FDPF51N25 Rev. B
相关型号：
FDPF51N25YDTU
N-Channel UniFETTM MOSFET 250V, 51A, 60mΩ, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, Y FORMED LEAD, 800/RAIL
FAIRCHILD
FDPF5N50NZ
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明