FCH35N60 [FAIRCHILD]
N-Channel SuperFET® MOSFET; N沟道MOSFET SuperFET®
| 型号： | FCH35N60 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel SuperFET® MOSFET |
| 文件： | 总8页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2013
FCH35N60
N-Channel SuperFET MOSFET
®
600 V, 35 A, 98 mΩ
Features
Description
SuperFET® MOSFET is Fairchild Semiconductor®’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance. This technology is tai-
lored to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
•
•
•
•
•
650 V @ TJ = 150°C
Typ.RDS(on) = 79 mΩ
Ultra Low Gate Charge ( Typ. Qg = 139 nC )
Low Effective Output Capacitance (Typ. Coss.eff = 340 pF)
100% Avalanche Tested
Application
•
Solar Inverter
•
AC-DC Power Supply
D
G
TO-247
G
D
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FCH35N60
600
Unit
V
Drain to Source Voltage
Gate-Soure voltage
±30
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- P ul s ed
35
ID
D r a in C u r r e n t
A
22.2
IDM
Dr ain Curr ent
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
105
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
1455
35
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
31.25
20
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
312.5
2.5
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Typ.
Max.
0.4
-
Unit
RθJC
RθCS
RθJA
-
0.24
-
Thermal Resistance, Case-to-Heat Sink
Thermal Resistance, Junction to Ambient
oC/W
42
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH35N60
FCH35N60
TO-247
-
-
30
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I
D = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, VGS = 0 V, TJ = 150oC
600
-
-
-
-
V
V
BVDSS
Drain to Source Breakdown Voltage
650
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, Referenced to 25oC
-
-
0.6
-
-
V/oC
/
ΔTJ
Drain-Source Avalanche Breakdown
Voltage
BVDS
V
GS = 0 V, ID = 16 A
700
V
V
DS = 600 V, VGS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 480 V, TC = 125oC
10
VGS = ±30 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 17.5 A
VDS = 40 V, ID = 17.5 A
3.0
-
5.0
0.098
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.079
28.8
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
4990
2380
140
113
340
139
31
6640
pF
pF
pF
pF
pF
nC
nC
VDS = 25 V, VGS = 0 V
f = 1 MHz
Coss
Crss
Output Capacitance
3170
Reverse Transfer Capacitance
Output Capacitance
-
Coss
Coss eff.
Qg
VDS = 480 V, VGS = 0 V, f = 1.0 MHz
VDS = 0 V to 480 V, VGS = 0 V
-
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
-
181
-
V
V
DS = 480 V, ID = 35 A
GS = 10 V
Qgs
Qgd
Gate to Drain “Miller” Charge
-
-
69
-
-
nC
(Note 4)
ESR
Equivalent Series Resistance (G-S)
Drain Open, F= 1 MHZ
1.4
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
34
120
105
73
78
ns
ns
ns
ns
VDD = 300 V, ID = 35 A
250
220
155
R
G = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
35
105
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 35 A
-
V
614
16.3
ns
μC
VGS = 0 V, ISD = 35 A
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2:
3:
I
I
= 17.5 A, V = 50 V, R = 25 Ω, Starting T = 25°C
AS
SD
DD
G
J
≤ 35 A, di/dt ≤ 200 A/μs, V ≤ BV
, Starting T = 25°C
DD
DSS J
4: Essentially Independent of Operating Temperature Typical Characteristics
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
200
VGS = 15.0 V
100
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
10
-55oC
25oC
150oC
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
0.3
0.1
4
5
6
7
8
9
1
10
20
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
0.24
0.20
0.16
0.12
0.08
0.04
500
100
150oC
25oC
10
VGS = 10V
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
1
0.2
0
25
50
75
100
125
0.4
0.8
1.2
1.6
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
50000
VDS = 100V
VDS = 250V
VDS = 400V
8
10000
Ciss
6
4
2
1000
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
100
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
oss
rss
gd
*Note: ID = 35A
120
= C
gd
Crss
600
0
10
0.1
0
40
80
160
1
10
100
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
1.15
3.0
1.10
1.05
1.00
0.95
2.5
2.0
1.5
1.0
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 17.5A
0.90
0.5
2. ID = 250μA
0.85
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
300
40
30
20
10
0
10μs
100
100μs
1ms
10ms
10
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
0.1
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
o
TC, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
0.6
0.1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
0.01
*Notes:
Single pulse
1. ZθJC(t) = 0.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
1
10
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
www.fairchildsemi.com
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
www.fairchildsemi.com
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
www.fairchildsemi.com
6
Mechanical Dimensions
TO-247
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
www.fairchildsemi.com
7
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FCH35N60 Rev. C0
8
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