FCH47N60F_F133 [FAIRCHILD]
N-Channel SuperFET FRFET MOSFET; N沟道的SuperFET FRFET MOSFET![FCH47N60F_F133](http://pdffile.icpdf.com/pdf1/p00200/img/icpdf/FCH47N_1127479_icpdf.jpg)
型号: | FCH47N60F_F133 |
厂家: | ![]() |
描述: | N-Channel SuperFET FRFET MOSFET |
文件: | 总8页 (文件大小:290K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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May 2013
FCH47N60F
N-Channel SuperFET FRFET MOSFET
®
®
600 V, 47 A, 73 m
Features
Description
®
®
•
•
•
•
•
•
650 V @TJ = 150 C
SuperFET MOSFET is Fairchild Semiconductor ’s first gener-
ation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance.This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance,dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server / telecom power, FPD
TV power, ATX power and industrial power applications. Super-
Typ. RDS(on) = 58 m
Ultra Low Gate Charge (Typ. Qg = 210 nC)
Low Effective Output Capacitance (Typ. Cosseff. = 420 pF)
100% Avalanche Tested
RoHS Compliant
®
FET FRFET MOSFET’s optimized body diode reverse recov-
ery performance can remove additional component and
improve system reliability.
Applications
•
Solar Inverter
•
AC-DC Power Supply
D
G
TO-247
G
D
S
Absolute Maximum Ratings
S
Symbol
Parameter
FCH47N60F_F133
Unit
VDSS
Drain-Source Voltage
Drain Current
600
V
ID
- Continuous (TC = 25C)
- Continuous (TC = 100C)
47
29.7
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
141
30
1800
47
VGSS
EAS
IAR
Gate-Source voltage
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
41.7
50
mJ
V/ns
Power Dissipation
(TC = 25C)
417
W
- Derate above 25C
3.33
W/C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
300
C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
Thermal Characteristics
Symbol
Parameter
Typ.
--
Max.
Unit
C/W
°C/W
C/W
RJC
RCS
RJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
0.3
--
0.24
--
Thermal Resistance, Junction-to-Ambient
41.7
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH47N60F
FCH47N60F_F133
TO-247
-
-
30
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A, TJ = 25C
VGS = 0V, ID = 250A, TJ = 150C
600
--
--
--
--
V
V
650
BVDSS
Breakdown Voltage Temperature
Coefficient
I
D = 250A, Referenced to 25C
--
--
0.6
--
--
V/C
/
TJ
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
700
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
--
--
--
10
100
A
A
V
DS = 480V, TC = 125C
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250A
3.0
--
--
0.062
40
5.0
0.073
--
V
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 23.5A
(Note 4)
gFS
Forward Transconductance
VDS = 40V, ID = 23.5A
--
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
--
--
5900
3200
250
8000
4200
--
pF
pF
pF
pF
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
160
--
Coss eff.
Effective Output Capacitance
420
--
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 300V, ID = 47A
--
--
--
--
--
--
--
185
210
520
75
430
450
1100
160
270
--
ns
ns
RG = 25
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
VDS = 480V, ID = 47A
GS = 10V
210
38
nC
nC
nC
V
Qgs
Qgd
110
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
47
141
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 47A
--
V
VGS = 0V, IS = 47A
240
2.04
ns
C
dIF/dt =100A/s
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 18A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 47A, di/dt 1,200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
Bottom : 5.5 V
150C
101
25C
-55C
* Notes :
1. 250s Pulse Test
2. TC = 25oC
- Note
1. VDS = 40V
100
2. 250s Pulse Test
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.25
0.20
102
0.15
VGS = 10V
101
0.10
150C
VGS = 20V
25C
0.05
* Notes :
1. VGS = 0V
2. 250s Pulse Test
* Note : TJ = 25C
100
0.2
0.00
0
20
40
60
80
100
120
140
160
180
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
25000
12
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
VDS = 100V
10
8
VDS = 250V
VDS = 400V
20000
15000
10000
5000
0
Coss
6
* Notes :
1. VGS = 0 V
2. f = 1 MHz
C
iss
4
2
Crss
* Note : ID = 47A
200
0
10-1
100
101
0
50
100
150
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
0.8
* Notes :
1. VGS = 10 V
2. ID = 23.5 A
2. ID = 250A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
40
30
20
10
0
Operation in This Area
is Limited by R DS(on)
102
100 s
1 ms
10 ms
101
DC
* Notes :
1. TC = 25C
2. TJ = 150C
3. Single Pulse
100
10-1
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [C]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
D = 0.5
1 0 -1
*
N o te s
1 . Z JC (t)
2 . D uty F a cto r, D = t1 /t2
:
0.2
=
0.3 C /W M a x.
0 .1
3 . T JM
-
T C
=
P D M * Z JC (t)
0.05
PDM
0.02
0.01
t1
1 0 -2
t2
single pulse
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u are W a ve P ulse D u ra tio n [se c]
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
4
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
6
Physical Dimensions
Figure 16. TO-247, Molded, 3-Lead, JEDEC Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
7
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
FPS™
F-PFS™
FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Sync-Lock™
®*
®
tm
®
®
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
SM
TinyBoost™
TinyBuck™
TinyCalc™
®
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
®
TranSiC
®
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver™
OptoHiT™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
SerDes™
®
SMART START™
Solutions for Your Success™
®
®
SPM
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild
®
®
UHC
®
Fairchild Semiconductor
FACT Quiet Series™
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
FACT
FAST
®
®
®
OPTOLOGIC
OPTOPLANAR
SupreMOS
SyncFET™
FastvCore™
FETBench™
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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2. A critical component in any component of a life support, device, or
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effectiveness.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
8
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FCH47N60_F085
Power Field-Effect Transistor, 47A I(D), 600V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
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