FCH47N60F [FAIRCHILD]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FCH47N60F |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：978K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2006
SuperFETTM
FCH47N60F
600V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
Typ. RDS(on) = 0.062Ω
Fast Recovery Type ( trr = 240ns)
Ultra Low Gate Charge (typ. Qg = 210nC)
Low Effective Output Capacitance (typ. Cosseff. = 420pF)
100% avalanche tested
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
G
TO-247
G
D
S
S
Absolute Maximum Ratings
Symbol
Parameter
FCH47N60F
Unit
VDSS
Drain-Source Voltage
Drain Current
600
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
47
29.7
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
141
± 30
1800
47
VGSS
EAS
IAR
Gate-Source voltage
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
41.7
50
mJ
V/ns
Power Dissipation
(TC = 25°C)
417
W
- Derate above 25°C
3.33
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.3
Unit
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
--
0.24
--
--
Thermal Resistance, Junction-to-Ambient
41.7
©2006 Fairchild Semiconductor Corporation
FCH47N60F Rev. B
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH47N60F
FCH47N60F
TO-247
-
-
30
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
VGS = 0V, ID = 250μA, TJ = 150°C
600
--
--
--
--
V
V
650
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
--
0.6
--
--
V/°C
/
ΔTJ
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
700
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
--
--
--
--
10
100
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 23.5A
VDS = 40V, ID = 23.5A
3.0
--
--
0.062
40
5.0
0.073
--
V
Ω
S
Static Drain-Source
On-Resistance
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
--
--
5900
3200
250
8000
4200
--
pF
pF
pF
pF
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
160
--
Coss eff.
Effective Output Capacitance
420
--
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 300V, ID = 47A
RG = 25Ω
--
--
--
--
--
--
--
185
210
520
75
430
450
1100
160
270
--
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
ns
Qg
VDS = 480V, ID = 47A
VGS = 10V
210
38
nC
nC
nC
Qgs
Qgd
110
--
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
47
141
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 47A
--
V
VGS = 0V, IS = 47A
240
2.04
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 18A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 47A, di/dt ≤ 1,200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FCH47N60F Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
Bottom : 5.5 V
150°C
101
25°C
-55°C
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
- Note
1. VDS = 40V
100
2. 250μs Pulse Test
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.25
0.20
102
0.15
VGS = 10V
101
0.10
150°C
VGS = 20V
25°C
0.05
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
* Note : TJ = 25°C
100
0.2
0.00
0
20
40
60
80
100
120
140
160
180
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
25000
12
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
VDS = 100V
10
8
VDS = 250V
VDS = 400V
20000
15000
10000
5000
0
Coss
6
* Notes :
1. VGS = 0 V
2. f = 1 MHz
C
iss
4
2
Crss
* Note : ID = 47A
200
0
10-1
100
101
0
50
100
150
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FCH47N60F Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
0.8
* Notes :
1. VGS = 10 V
2. ID = 23.5 A
2. ID = 250μA
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
TJ, Junction Temperature [°C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
40
30
20
10
0
Operation in This Area
is Limited by R DS(on)
102
100 μs
1 ms
10 ms
101
DC
* Notes :
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
100
10-1
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [°C]
VDS, Drain-Source Voltage [V]
Figure 10. Transient Thermal Response Curve
D = 0.5
1 0 -1
*
N o te s
1 . Z θ JC (t)
2 . D uty F a cto r, D = t1 /t2
:
0.2
=
0.3 °C /W M a x.
0 .1
3 . T JM
-
T C
=
P D M * Z θ JC (t)
0.05
PDM
0.02
0.01
t1
1 0 -2
t2
single pulse
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u are W a ve P ulse D u ra tio n [se c]
4
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FCH47N60F Rev. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
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FCH47N60F Rev. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
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FCH47N60F Rev. B
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
7
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FCH47N60F Rev. B
TRADEMARKS
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT
EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
8
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FCH47N60F Rev. B
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