FCH47N60F_13 [FAIRCHILD]
N-Channel SuperFET FRFET MOSFET; N沟道的SuperFET FRFET MOSFET
| 型号： | FCH47N60F_13 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel SuperFET FRFET MOSFET |
| 文件： | 总8页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2013
FCH47N60F
N-Channel SuperFET FRFET MOSFET
®
®
600 V, 47 A, 73 m
Features
Description
®
®
•
•
•
•
•
•
650 V @TJ = 150 C
SuperFET MOSFET is Fairchild Semiconductor ’s first gener-
ation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance.This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance,dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server / telecom power, FPD
TV power, ATX power and industrial power applications. Super-
Typ. RDS(on) = 58 m
Ultra Low Gate Charge (Typ. Qg = 210 nC)
Low Effective Output Capacitance (Typ. Cosseff. = 420 pF)
100% Avalanche Tested
RoHS Compliant
®
FET FRFET MOSFET’s optimized body diode reverse recov-
ery performance can remove additional component and
improve system reliability.
Applications
•
Solar Inverter
•
AC-DC Power Supply
D
G
TO-247
G
D
S
Absolute Maximum Ratings
S
Symbol
Parameter
FCH47N60F_F133
Unit
VDSS
Drain-Source Voltage
Drain Current
600
V
ID
- Continuous (TC = 25C)
- Continuous (TC = 100C)
47
29.7
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
141
30
1800
47
VGSS
EAS
IAR
Gate-Source voltage
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
41.7
50
mJ
V/ns
Power Dissipation
(TC = 25C)
417
W
- Derate above 25C
3.33
W/C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
300
C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
C
Thermal Characteristics
Symbol
Parameter
Typ.
--
Max.
Unit
C/W
°C/W
C/W
RJC
RCS
RJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
0.3
--
0.24
--
Thermal Resistance, Junction-to-Ambient
41.7
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH47N60F
FCH47N60F_F133
TO-247
-
-
30
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A, TJ = 25C
VGS = 0V, ID = 250A, TJ = 150C
600
--
--
--
--
V
V
650
BVDSS
Breakdown Voltage Temperature
Coefficient
I
D = 250A, Referenced to 25C
--
--
0.6
--
--
V/C
/
TJ
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
700
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
--
--
--
10
100
A
A
V
DS = 480V, TC = 125C
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250A
3.0
--
--
0.062
40
5.0
0.073
--
V
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 23.5A
(Note 4)
gFS
Forward Transconductance
VDS = 40V, ID = 23.5A
--
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
--
--
5900
3200
250
8000
4200
--
pF
pF
pF
pF
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
160
--
Coss eff.
Effective Output Capacitance
420
--
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 300V, ID = 47A
--
--
--
--
--
--
--
185
210
520
75
430
450
1100
160
270
--
ns
ns
RG = 25
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
VDS = 480V, ID = 47A
GS = 10V
210
38
nC
nC
nC
V
Qgs
Qgd
110
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
47
141
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 47A
--
V
VGS = 0V, IS = 47A
240
2.04
ns
C
dIF/dt =100A/s
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 18A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 47A, di/dt 1,200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
Bottom : 5.5 V
150C
101
25C
-55C
* Notes :
1. 250s Pulse Test
2. TC = 25oC
- Note
1. VDS = 40V
100
2. 250s Pulse Test
10-1
100
101
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.25
0.20
102
0.15
VGS = 10V
101
0.10
150C
VGS = 20V
25C
0.05
* Notes :
1. VGS = 0V
2. 250s Pulse Test
* Note : TJ = 25C
100
0.2
0.00
0
20
40
60
80
100
120
140
160
180
200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
25000
12
Ciss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
VDS = 100V
10
8
VDS = 250V
VDS = 400V
20000
15000
10000
5000
0
Coss
6
* Notes :
1. VGS = 0 V
2. f = 1 MHz
C
iss
4
2
Crss
* Note : ID = 47A
200
0
10-1
100
101
0
50
100
150
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
0.8
* Notes :
1. VGS = 10 V
2. ID = 23.5 A
2. ID = 250A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [C]
TJ, Junction Temperature [C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
40
30
20
10
0
Operation in This Area
is Limited by R DS(on)
102
100 s
1 ms
10 ms
101
DC
* Notes :
1. TC = 25C
2. TJ = 150C
3. Single Pulse
100
10-1
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [C]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
D = 0.5
1 0 -1
*
N o te s
1 . Z JC (t)
2 . D uty F a cto r, D = t1 /t2
:
0.2
=
0.3 C /W M a x.
0 .1
3 . T JM
-
T C
=
P D M * Z JC (t)
0.05
PDM
0.02
0.01
t1
1 0 -2
t2
single pulse
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u are W a ve P ulse D u ra tio n [se c]
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
4
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
6
Physical Dimensions
Figure 16. TO-247, Molded, 3-Lead, JEDEC Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
www.fairchildsemi.com
7
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®*
®
tm
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Quiet Series™
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™
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FCH47N60F Rev. C1
8
相关型号：
FCH47N60_F085
Power Field-Effect Transistor, 47A I(D), 600V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
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