FCH47N60-F085 [ONSEMI]
600 V、47 A、64 mΩ、TO-247N 沟道 SuperFET™;
| 型号： | FCH47N60-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600 V、47 A、64 mΩ、TO-247N 沟道 SuperFET™ 局域网 开关 晶体管 |
| 文件： | 总8页 (文件大小：665K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N-Channel
600 V, 47 A, 79 mW
FCH47N60-F085
Description
®
SUPERFET is ON Semiconductor’s proprietary new generation
of high voltage MOSFETs utilizing an advanced charge balance
mechanism for outstanding low on−resistance and lower gate charge
performance.
www.onsemi.com
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand extreme
dv/dt rate and higher avalanche energy.
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
79 mW
47 A
Consequently, SUPERFET is suitable for various automotive
DC/DC power conversion.
D
Features
• Typical r
= 64 mW at V = 10 V, I = 47 A
GS D
DS(on)
• Typical Q
= 187 nC at V = 10 V, I = 47 A
GS D
g(tot)
• UIS Capability
• Qualified to AEC Q101 and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
G
S
Applications
N-Channel MOSFET
• Automotive On Board Charger
• Automotive DC/DC Converter for HEV
G
D
S
TO−247
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
47N60
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot Code
FCH47N60
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
December, 2020 − Rev. 4
FCH47N60−F085/D
FCH47N60−F085
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
C
Symbol
Parameter
Ratings
600
Unit
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
V
GS
30
V
I
Drain Current − Continuous (V = 10) (Note 1)
T
T
= 25°C
= 25°C
47
A
D
GS
C
Pulsed Drain Current
See Fig. 4
810
C
E
AS
Single Pulsed Avalanche Rating (Note 2)
Power Dissipation
mJ
W
P
417
D
Derate above 25°C
3.3
W/°C
°C
T , T
Operating and Storage Temperature
−55 to +150
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by bondwire configuration.
2. Starting T = 25°C, L = 5 mH, I = 18 A, V = 100 V during inductor charging and V = 0 V during time in avalanche.
J
AS
DD
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
presented here is based on mounting on a 1 in pad of 2oz copper.
is guaranteed by design, while R
is determined by the board design. The maximum rating
q
q
JC
JA
2
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
0.3
Unit
R
Thermal Resistance Junction to Case
_C/W
q
JC
R
Maximum Thermal Resistance Junction to Ambient (Note 3)
50
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Reel Size
Tape Width
Quantity
30 Units
FCH47N60−F085
FCH47N60
TO−247−3LD
−
−
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2
FCH47N60−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
B
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
V
V
V
= 0 V, I = 250 mA
600
−
−
−
−
−
1
1
V
VDSS
GS
DS
DS
D
I
= 600 V, V = 0 V, T = 25_C
mA
mA
DSS
GS
J
= 600 V, V = 0 V, T = 150_C
−
GS
J
(Note 4)
I
Gate to Source Leakage Current
V
GS
=
30 V
−
−
100
nA
GSS
ON CHARACTERISTICS
V
r
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
V
V
= V , I = 250 mA
3
−
−
4
5
V
GS(th)
GS
GS
GS
DS
D
= 10 V, I = 47 A, T = 25_C
64
79
mW
mW
DS(on)
D
J
= 10 V, I = 47 A, T = 150_C
180
223
D
J
(Note 4)
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
5900
3200
177
1
8000
4200
−
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 1 MHz
−
g
Q
Total Gate Charge at 10 V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 to 10 V, V = 300 V, I = 47 A
187
12
250
18
−
nC
nC
nC
nC
g(TOT)
DD
D
Q
= 0 to 2 V, V = 300 V, I = 47 A
DD D
g(th)
Q
= 300 V, I = 47 A
40
gs
gd
D
Q
81
−
SWITCHING CHARACTERISTICS
t
Turn-On Time
Turn-On Delay Time
Rise Time
V
DD
V
GS
= 380 V, I = 47 A,
−
−
−
−
−
−
−
410
ns
ns
ns
ns
ns
ns
on
D
= 10 V, R = 25 W
G
t
110
160
540
125
−
−
−
d(on)
t
r
t
Turn-Off Delay Time
Fall Time
−
d(off)
t
f
−
t
Turn-Off Time
1000
off
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
I
I
= 47 A, V = 0 V
−
−
−
−
−
−
1.4
1.25
800
28
V
V
SD
SD
GS
= 23.5 A, V = 0 V
SD
GS
T
Reverse Recovery Time
I = 47 A, dI /dt = 100 A/ms,
F
V
683
21
ns
mC
rr
SD
= 480 V
DD
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 150°C. Product is not tested to this condition in production.
J
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3
FCH47N60−F085
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
V
GS
= 10 V
0
25
50
75
100
125
150
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
q
x R
+ T
JC C
q
J
DM
JC
0.01
−3
−2
−1
0
1
−5
−4
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
1000
100
V
GS
= 10 V
T
= 25°C
C
FOR TEMPERATURES
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
175 * T
C
Ǹ
I = I
2
ƪ ƫ
150
10
1
SINGLE PULSE
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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4
FCH47N60−F085
TYPICAL CHARACTERISTICS (continued)
100
300
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VDD = 20 V
75
50
25
T
= 150°C
J
10
1
100 ms
T = 25°C
J
T = −55°C
J
1 ms
OPERATION IN THIS
AREA MAY BE
10 ms
100 ms
LIMITED BY RDS(on)INGLE PULSE
T
T
= MAX RATED
J
C
= 25°C
0.1
0
4
6
8
10
1
10
2
100
1000
V , DRAIN TO SOURCE VOLTAGE (V)
DS
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 6. Transfer Characteristics
Figure 5. Forward Bias Safe Operating Area
150
120
90
60
30
0
300
80 ms PULSE WIDTH
TJ = 25°C
100
VGS = 0 V
V
GS
10
15 V Top
10 V
TJ = 150°C
TJ = 25°C
8 V
7 V
1
6 V
5.5 V Bottom
0.1
5.5 V
0.01
0.0
0.2
0.4
0..6
0.8
1..0
1..2
0
4
8
12
16
20
V , DRAIN TO SOURCE VOLTAGE (V)
DS
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Saturation Characteristics
Figure 7. Forward Diode Characteristics
80
500
400
300
200
I
D
= 47 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
80 ms PULSE WIDTH
TJ = 150°C
64
48
V
GS
15 V Top
10 V
8 V
7 V
6 V
32
16
TJ = 150°C
5.5 V
5 V Bottom
100
0
5 V
TJ = 25°C
0
0
4
8
12
16
20
10
6
8
V , DRAIN TO SOURCE VOLTAGE (V)
DS
V , DRAIN TO SOURCE VOLTAGE (V)
GS
Figure 10. RDSON vs. Gate Voltage
Figure 9. Saturation Characteristics
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5
FCH47N60−F085
TYPICAL CHARACTERISTICS (continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = V
DS
ID = 250 mA
ID = 47 A
VGS = 10 V
0.7
0.6
−80 −40
0
40
80
120
160
200
−80 −40
0
40
80
120
160
200
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 12. Normalized Gate Threshold Voltage
vs. Temperature
Figure 11. Normalized RDSON vs. Junction
Temperature
100000
1.2
ID = 1 mA
C
iss
10000
1000
100
10
1.1
1.0
C
oss
0.9
0.8
f = 1 MHz
VGS = 0 V
C
rss
1
0.1
−80 −40
0
40
80
120
160
200
1
10
100
V , DRAIN TO SOURCE VOLTAGE (V)
DS
T , JUNCTION TEMPERATURE (°C)
J
Figure 14. Capacitance vs. Drain to Source
Voltage
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10
I
D
= 47 A
V
V
DD
= 240 V
8
6
4
2
0
= 300 V
V
= 360 V
DS
DD
0
40
80
120
160
200
Q
g,
GATE CHARGE (nC)
Figure 15. Gate Charge vs. Gate to Source
Voltage
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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