STGD3NB60KD [ETC]
N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT ; N沟道6A - 600V DPAK短路保护的PowerMESH IGBT\n
| 型号： | STGD3NB60KD |
| 厂家： | 
ETC |
| 描述： | N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT
|
| 文件： | 总10页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGD3NB60KD
N-CHANNEL 6A - 600V - DPAK
SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE
V
CES
V
I (#)
C
CE(sat) (Max)
@25°C
@100°C
STGD3NB60KD
600 V
< 2.8 V
6 A
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW GATE CHARGE
OFF LOSSES INCLUDE TAIL CURRENT
HIGH FREQUENCY OPERATION
SHORT CIRCUIT RATED
LATCH CURRENT FREE OPERATION
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
3
1
DPAK
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
™
PowerMESH IGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
APPLICATIONS
■
HIGH FREQUENCY MOTOR CONTROLS
■
SMPS and PFC
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
DPAK
PACKAGING
STGD3NB60KDT4
GD3NB60KD
TAPE & REEL
September 2003
1/10
STGD3NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
600
20
Unit
V
V
Collector-Emitter Voltage (V = 0)
CES
GS
V
ECR
Emitter-Collector Voltage
Gate-Emitter Voltage
V
V
±20
10
V
GE
I
Collector Current (continuous) at T = 25°C(#)
A
C
C
I
Collector Current (continuous) at T = 100°C(#)
6
A
C
C
I
( )
Collector Current (pulsed)
Short Circuit Withstand
24
A
CM
Tsc
10
µs
W
P
Total Dissipation at T = 25°C
50
TOT
C
Derating Factor
0.4
W/°C
T
Storage Temperature
Operating Junction Temperature
stg
–55 to 150
°C
T
j
( ) Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.5
°C/W
°C/W
100
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Collector-Emitter Breakdown
Voltage
I
= 250 µA, V = 0
600
V
BR(CES)
C
GE
I
Collector cut-off
(V = 0)
GE
V
V
V
= Max Rating, T = 25 °C
50
µA
µA
nA
CES
CE
C
= Max Rating, T = 125 °C
100
CE
GE
C
I
Gate-Emitter Leakage
= ±20V , V = 0
±100
GES
CE
Current (V = 0)
CE
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
7
Unit
V
V
GE(th)
V
V
V
= V , I = 250 µA
Gate Threshold Voltage
5
CE
GE
GE
GE
C
V
Collector-Emitter Saturation
Voltage
= 15V, I = 3 A
2.4
1.9
2.8
V
CE(sat)
C
= 15V, I = 3 A, Tj =125°C
V
C
(#) Calculated according to the iterative formula:
T
– T
C
JMAX
--------------------------------------------------------------------------------------
(T ) =
C
I
C
R
× V
(T , I )
CESAT(MAX) C C
THJ – C
2/10
STGD3NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
V
= 25 V I =3 A
Forward Transconductance
2.4
S
CE
, C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
220
50
5.6
pF
pF
pF
ies
CE
GE
C
oes
C
res
Q
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
V
= 480V, I = 3 A,
= 15V
19
14
3.3
8
nC
nC
nC
g
CE
GE
C
Q
ge
Q
gc
tscw
Short Circuit Withstand Time
V
= 0.5 BVces , V = 15 V,
10
µs
ce
GE
Tj = 125°C , R = 10 Ω
G
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 480 V, I = 3 A
CC C
13.5
4.5
ns
ns
d(on)
t
r
= 10Ω , V = 15 V
GE
G
(di/dt)
Turn-on Current Slope
V
V
= 480 V, I = 7 A, R =10Ω
= 15 V,Tj = 125°C
500
A/µs
on
CC
GE
C
G
Eon
Turn-on Switching Losses
30
µJ
SWITCHING OFF
Symbol
Parameter
Cross-over Time
Test Conditions
Min.
Typ.
86
Max.
Unit
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
t
V
= 480 V, I =3 A,
c
cc
C
R
= 10 Ω , V = 15 V
GE
GE
t (V
)
off
Off Voltage Rise Time
Delay Time
20
r
t (
d off
)
32
t
f
Fall Time
85
E
off
(**)
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
50
E
78
ts
t
V
= 480 V, I = 3 A,
190
55
c
cc
C
R
= 10 Ω , V = 15 V
GE
GE
t (V
)
off
r
Tj = 125 °C
t (
d off
)
90
t
f
Fall Time
130
110
140
E
off
(**)
Turn-off Switching Loss
Total Switching Loss
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Forward Current
1.5
12
A
A
f
Forward Current pulsed
Forward On-Voltage
I
fm
V
I = 1.5 A
I = 1.5 A, Tj = 125 °C
f
2.1
1.6
1.3
V
V
f
f
t
Q
I = 1.5 A ,V = 35 V,
Tj = 125°C, di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
95
110
2.7
ns
nC
A
rr
f
R
rr
I
rrm
3/10
STGD3NB60KD
Thermal Impedance
Transfer Characteristics
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
4/10
STGD3NB60KD
Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
5/10
STGD3NB60KD
Total Switching Losses vs Temperature
Emitter-collector Diode Characteristics
Total Switching Losses vs Collector Current
Switching Off Safe Operating Area
6/10
STGD3NB60KD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/10
STGD3NB60KD
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
8/10
STGD3NB60KD
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
9/10
STGD3NB60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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