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STGD3NB60SD-1 [STMICROELECTRONICS]

N-channel 3 A, 600 V low drop IGBT;
STGD3NB60SD-1
型号： STGD3NB60SD-1
厂家： ST    ST
描述：

N-channel 3 A, 600 V low drop IGBT

栅 双极性晶体管
文件： 总9页 (文件大小：312K)
中文：  中文翻译
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STGD3NB60SD  
N-CHANNEL 3A - 600V - DPAK  
PowerMESH™ IGBT  
TYPE  
V
V
I
C
CES  
CE(sat)  
STGD3NB60SD  
600 V  
< 1.5 V  
3 A  
■
HIGH INPUT IMPEDANCE (VOLTAGE  
DRIVEN)  
3
1
■
■
■
■
VERY LOW ON-VOLTAGE DROP (V  
HIGH CURRENT CAPABILITY  
INTEGRATED WHEELING DIODE  
)
cesat  
DPAK  
OFF LOSSES INCLUDE TAIL CURRENT  
DESCRIPTION  
Using the latest high voltage technology based on  
a patented strip layout, STMicroelectronics has  
designed an advanced family of IGBTs, the  
INTERNAL SCHEMATIC DIAGRAM  
™
PowerMESH IGBTs, with outstanding  
performances. The suffix “S” identifies a family  
optimized to achieve minimum on-voltage drop for  
low frequency applications (<1kHz).  
APPLICATIONS  
■
■
■
MOTOR CONTROL  
GAS DISCHARGE LAMP  
STATIC RELAYS  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
PACKAGE  
PACKAGING  
STGD3NB60SDT4  
GD3NB60SD  
DPAK  
TAPE & REEL  
May 2004  
1/9  
STGD3NB60SD  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Collector-Emitter Voltage (V = 0)  
600  
CES  
GS  
V
Gate-Emitter Voltage  
± 20  
V
GE  
I
C
Collector Current (continuous) at T = 25°C  
6
A
C
I
Collector Current (continuous) at T = 100°C  
3
25  
A
C
C
I
( )  
Collector Current (pulsed)  
A
CM  
P
TOT  
Total Dissipation at T = 25°C  
48  
W
C
Derating Factor  
0.32  
W/°C  
°C  
°C  
T
stg  
Storage Temperature  
– 65 to 175  
175  
T
Max. Operating Junction Temperature  
j
(■) Pulse width limited by safe operating area  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case Max  
Thermal Resistance Junction-ambient Max  
3.125  
100  
°C/W  
°C/W  
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)  
OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
Collectro-Emitter Breakdown  
Voltage  
I
= 250 µA, V = 0  
600  
V
BR(CES)  
C
GE  
I
Collector cut-off  
(V = 0)  
GE  
V
V
V
= Max Rating, T = 25 °C  
10  
µA  
µA  
nA  
CES  
CE  
C
= Max Rating, T = 125 °C  
100  
CE  
GE  
C
I
Gate-Emitter Leakage  
= ±20V , V = 0  
±100  
GES  
CE  
Current (V = 0)  
CE  
ON (1)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
GE(th)  
V
= V , I = 250µA  
Gate Threshold Voltage  
2.5  
4.5  
V
CE  
GE  
C
V
Collector-Emitter Saturation  
Voltage  
V
V
V
= 15V, I = 1.5 A  
V
V
V
1
1.2  
1.1  
CE(sat)  
GE  
GE  
GE  
C
1.5  
= 15V, I = 3 A  
C
= 15V, I = 7 A, T =125 °C  
C
J
DYNAMIC  
Symbol  
Parameter  
Forward Transconductance  
Input Capacitance  
Test Conditions  
Min.  
Typ.  
2.5  
255  
30  
Max.  
Unit  
S
g
fs  
V
= 10 V I = 3 A  
1.7  
CE  
, C  
C
V
= 25V, f = 1 MHz, V = 0  
pF  
pF  
pF  
ies  
CE  
GE  
C
Output Capacitance  
oes  
C
Reverse Transfer  
Capacitance  
5.6  
res  
Q
Total Gate Charge  
Gate-Emitter Charge  
Gate-Collector Charge  
V
V
= 480 V, I = 3 A,  
= 15V  
18  
5.4  
5.5  
nC  
nC  
nC  
23  
G
CE  
C
Q
GE  
Q
GC  
GE  
I
Latching Current  
V
R
= 380 V , Tj = 25°C  
= 1KΩ  
15  
A
CL  
clamp  
G
2/9  
STGD3NB60SD  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
V
R
= 480 V, I = 3 A  
Turn-on Delay Time  
Rise Time  
125  
150  
µs  
µs  
d(on)  
CC  
C
t
r
= 1KΩ , V = 15 V  
G
GE  
V
V
= 480 V, I = 3 A, R =1KΩ  
= 15 V, Tj = 125°C  
A/µs  
µJ  
(di/dt)  
Eon  
Turn-on Current Slope  
Turn-on Switching Losses  
50  
1100  
CC  
GE  
C
G
on  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
Cross-over Time  
Off Voltage Rise Time  
Delay Time  
Fall Time  
Turn-off Switching Loss  
V
R
= 480 V, I = 3 A,  
= 1KΩ , V = 15 V  
GE GE  
1.8  
1.0  
3.4  
0.72  
1.15  
µs  
µs  
µs  
µs  
mJ  
c
cc  
C
t (V  
)
r
t
off  
d(on)  
t
f
E
(**)  
off  
t
Cross-over Time  
Off Voltage Rise Time  
Delay Time  
Fall Time  
Turn-off Switching Loss  
V
R
= 480 V, I = 3 A,  
= 1KΩ , V = 15 V,  
GE GE  
2.8  
1.45  
3.6  
1.2  
1.8  
µs  
µs  
µs  
µs  
mJ  
c
cc  
C
t (V  
off  
d(on)  
t
)
r
t
Tj = 125°C  
f
E
(**)  
off  
COLLECTOR-EMITTER DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
Forward Current  
A
A
3
25  
f
Forward Current pulsed  
Forward On-Voltage  
I
fm  
V
I = 3 A  
I = 1 A  
f
1.9  
1.55  
1.15  
V
V
f
f
t
Q
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
I = 3 A ,V = 200 V,  
Tj =125°C, di/dt = 100A/µs  
ns  
nC  
A
1700  
4500  
9.5  
rr  
f
R
rr  
I
rrm  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by max. junction temperature.  
(**) Losses also include the Tail (Jedec Standardization)  
Thermal Impedance  
3/9  
STGD3NB60SD  
Transfer Characteristics  
Output Characteristics  
Transconductance  
Collector-Emitter On Voltage vs Temperature  
Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature  
4/9  
STGD3NB60SD  
Capacitance Variations  
Normalized Breakdown Voltage vs Temperature  
Gate Charge vs Gate-Emitter Voltage  
Off Losses vs Temperature  
Off Losses vs Collector Current  
Switching Off Safe Operating Area  
5/9  
STGD3NB60SD  
Diode Forward Voltage vs Tj  
Diode Forward Voltage  
Fig. 1: Gate Charge test Circuit  
Fig. 2: Test Circuit For Inductive Load Switching  
6/9  
STGD3NB60SD  
TO-252 (DPAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
6.40  
4.40  
9.35  
TYP.  
MAX.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
6.60  
4.60  
10.10  
MIN.  
0.087  
0.035  
0.001  
0.025  
0.204  
0.018  
0.019  
0.236  
0.252  
0.173  
0.368  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.213  
0.024  
0.024  
0.244  
0.260  
0.181  
0.398  
A
A1  
A2  
B
B2  
C
C2  
D
E
G
H
L2  
L4  
V2  
0.8  
0.031  
0.60  
0o  
1.00  
8o  
0.024  
0o  
0.039  
0o  
P032P_B  
7/9  
STGD3NB60SD  
DPAK FOOTPRINT  
TUBE SHIPMENT (no suffix)*  
All dimensions  
are in millimeters  
All dimensions are in millimeters  
TAPE AND REEL SHIPMENT (suffix ”T4”)*  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
16.4  
50  
0.059  
13.2 0.504 0.520  
0.795  
18.4 0.645 0.724  
1.968  
22.4  
0.881  
BASE QTY  
BULK QTY  
2500  
TAPE MECHANICAL DATA  
2500  
mm  
MIN. MAX. MIN. MAX.  
6.8 0.267 0.275  
10.4 10.6 0.409 0.417  
12.1 0.476  
inch  
DIM.  
A0  
B0  
B1  
D
7
1.5  
1.5  
1.6 0.059 0.063  
0.059  
D1  
E
1.65 1.85 0.065 0.073  
7.4 7.6 0.291 0.299  
2.55 2.75 0.100 0.108  
F
K0  
P0  
P1  
P2  
R
3.9  
7.9  
1.9  
40  
4.1 0.153 0.161  
8.1 0.311 0.319  
2.1 0.075 0.082  
1.574  
W
15.7  
16.3 0.618 0.641  
* on sales type  
8/9  
STGD3NB60SD  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
All other names are the property of their respective owners  
© 2004 STMicroelectronics - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
9/9  

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