STGD3NC60HD [STMICROELECTRONICS]
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| 型号： | STGD3NC60HD |
| 厂家： | 
ST |
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| 文件： | 总9页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGD3NC60HD
N-CHANNEL 3A - 600V DPAK
Very Fast PowerMESH™ IGBT
TARGET SPECIFICATION
Table 1: General Features
Figure 1: Package
TYPE
V
V
I
C
CES
CE(sat)
(Max) @25°C @100°C
STGD3NC60HDT4 600 V
< 2.5 V 6 A
■ LOWER ON-VOLTAGE DROP (V
)
cesat
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOSSES INCLUDE DIODE RECOVERY
ENERGY
3
1
■ LOWER C
/C
RATIO
RES IES
DPAK
■ HIGH FREQUENCY OPERATION
■ VERY SOFT ULTRA FAST RECOVERY ANTI
PARALLEL DIODE
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
Figure 2: Internal Schematic Diagram
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
™
erMESH IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) man-
taining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Table 2: Order Code
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGD3NC60HDT4
GD3NC60HD
DPAK
TAPE & REEL
Rev. 1
February 2005
1/9
This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice
STGD3NC60HD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
600
20
Unit
V
V
Collector-Emitter Voltage (V = 0)
CES
GS
V
Emitter-Collector Voltage
Gate-Emitter Voltage
V
ECR
V
GE
±20
10
V
I
C
Collector Current (continuous) at T = 25°C (#)
A
C
I
C
Collector Current (continuous) at T = 100°C (#)
6
A
C
I
( )
Collector Current (pulsed)
24
A
CM
I
Diode RMS Forward Current at T = 25°C
TBD
50
A
F
C
P
Total Dissipation at T = 25°C
W
W/°C
TOT
C
Derating Factor
0.40
T
Storage Temperature
Operating Junction Temperature
stg
– 55 to 150
°C
T
j
( ) Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Typ.
Max.
2.5
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
°C/W
°C/W
°C
100
T
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
275
L
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Main Parameters
Symbol
Parameter
Test Conditions
= 1 mA, V = 0
Min.
Typ.
Max.
Unit
V
Collector-Emitter Breakdown
Voltage
I
C
600
V
BR(CES)
GE
I
Collector cut-off Current
(V = 0)
GE
V
V
= Max Rating, T = 25 °C
10
1
µA
mA
CES
GES
CE
C
= Max Rating, T = 125 °C
CE
C
I
Gate-Emitter Leakage
V
GE
= ± 20V , V = 0
±100
nA
CE
Current (V = 0)
CE
V
V
= V , I = 250 µA
Gate Threshold Voltage
3.75
5.75
2.5
V
GE(th)
CE
GE
C
V
Collector-Emitter Saturation
Voltage
V
V
= 15V, I = 3 A
V
V
1.9
1.7
CE(sat)
GE
C
= 15V, I = 3 A, Tc= 125°C
GE
C
(#) Calculated according to the iterative formula:
T
– T
JMAX
-------------------------------------------------------------------------------------------------
(T ) =
C
I
C
C
R
× V
(T , I )
THJ – C
CESAT(MAX) C C
2/9
STGD3NC60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
(1)
Parameter
Forward Transconductance
Input Capacitance
Test Conditions
Min.
Typ.
TBD
320
28
Max.
Unit
S
g
fs
V
V
= 15 V I = 3 A
CE
, C
C
C
= 25 V, f= 1 MHz, V = 0
pF
pF
pF
ies
CE
GE
Output Capacitance
oes
C
Reverse Transfer
Capacitance
7.2
res
Q
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
V
= 390 V, I = 3 A,
= 15 V
15
TBD
TBD
TBD
nC
nC
nC
g
CE
C
Q
ge
Q
gc
GE
(see Figure 5)
I
CL
Turn-Off SOA Minimum
Current
V
R
= 480 V , Tj = 150°C
TBD
A
clamp
= 10 Ω, V = 15 V
G
GE
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
= 390 V, I = 3 A
ns
ns
A/µs
TBD
TBD
TBD
d(on)
CC
C
t
r
R = 10 Ω, V = 15V, Tj= 25°C
G GE
(see Figure 3)
(di/dt)
on
t
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
= 390 V, I = 3 A
TBD
TBD
TBD
ns
ns
A/µs
d(on)
CC
C
t
r
R = 10 Ω, V = 15V, Tj= 125°C
G GE
(see Figure 3)
(di/dt)
on
Table 8: Switching Off
Symbol
Parameter
Test Conditions
= 390 V, I = 3 A,
= 10 Ω , V = 15 V
GE
Min.
Typ.
TBD
TBD
70
Max.
Unit
ns
t (V
)
off
V
cc
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
r
C
R
G
t (
d off
)
ns
T = 25 °C
(see Figure 3)
J
t
f
ns
t (V
)
V
R
= 390 V, I = 3 A,
= 10 Ω , V = 15 V
GE
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
TBD
TBD
TBD
ns
r
off
cc C
G
t (
d off
)
ns
Tj = 125 °C
(see Figure 3)
t
f
ns
Table 9: Switching Energy
Symbol
Parameter
Test Conditions
= 390 V, I = 3 A
Min.
Typ.
Max
Unit
Eon (2)
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
TBD
TBD
TBD
µJ
µJ
µJ
V
CC
C
E
off
(3)
R = 10 Ω, V = 15V, Tj= 25°C
G
GE
E
ts
(see Figure 3)
Eon (2)
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
TBD
TBD
TBD
µJ
µJ
µJ
V
= 390 V, I = 3 A
CC
C
E
off
(3)
R = 10 Ω, V = 15V, Tj= 125°C
(see Figure 3)
G
GE
E
ts
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current.
3/9
STGD3NC60HD
Table 10: Collector-Emitter Diode
Symbol
Parameter
Test Condiction
Min.
Typ.
Max.
Unit
2.1
V
Forward On-Voltage
If = 1.5 A
If = 1.5 A, Tj = 125 °C
1.6
1.3
V
V
f
t
t
Q
Reverse Recovery Time
If = 1.5 A, V = 40 V,
TBD
TBD
TBD
TBD
TBD
ns
ns
nC
A
rr
R
T = 25 °C, di/dt = 100 A/µs
a
j
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
(see Figure 6)
rr
I
rrm
S
t
t
Q
Reverse Recovery Time
If = 1.5 A, V = 40 V,
TBD
TBD
TBD
TBD
TBD
ns
ns
nC
A
rr
R
T = 125 °C, di/dt = 100 A/µs
a
j
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
(see Figure 6)
rr
I
rrm
S
4/9
STGD3NC60HD
Figure 3: Test Circuit for Inductive Load
Switching
Figure 5: Gate Charge Test Circuit
Figure 6: Diode Recovery Time Waveforms
Figure 4: Switching Waveforms
5/9
STGD3NC60HD
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
6/9
STGD3NC60HD
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
7/9
STGD3NC60HD
Table 11: Revision History
Date
Revision
Description of Changes
11-Feb-2005
1
First release
8/9
STGD3NC60HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
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9/9
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