STGD3NB60ST4 [STMICROELECTRONICS]
N-CHANNEL 3A - 600V DPAK Power MESH IGBT; N沟道3A - 600V电源DPAK IGBT MESH
| 型号： | STGD3NB60ST4 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 3A - 600V DPAK Power MESH IGBT |
| 文件： | 总8页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGD3NB60S
N-CHANNEL 3A - 600V DPAK
Power MESH IGBT
PRELIMINARY DATA
TYPE
VCES
VCE(sat)
IC
STGD3NB60S
600 V
< 1.5 V
3 A
■
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
■
■
■
■
VERY LOW ON-VOLTAGE DROP (Vcesat)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
3
1
DPAK
TO-252
(Suffix ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequencyapplications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VECR
VGE
Parameter
Value
600
Unit
V
Collector-Emitter Voltage (VGS = 0)
Reverse Battery Protection
Gate-Emitter Voltage
20
V
20
V
±
o
IC
Collector Current (continuous) at Tc = 25 C
6
A
o
IC
Collector Current (continuous) at Tc = 100 C
3
A
I
CM(• )
Collector Current (pulsed)
24
40
A
o
Ptot
Total Dissipation at Tc = 25 C
W
Derating Factor
0.32
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/8
June 1999
STGD3NB60S
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Max
Typ
3.125
100
1.5
oC/W
oC/W
oC/W
(Tj = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
Parameter
Test Conditions
IC = 250 µA VGE = 0
Min.
Typ.
Max.
Unit
VBR(CES) Collector-Emitter
Breakdown Voltage
600
V
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating
VCE = Max Rating
Tj = 25 oC
Tj = 125 oC
10
100
µA
A
µ
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V
VCE = 0
± 100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold
Voltage
VCE = VGE IC = 250 µA
2.5
5
V
VCE(SAT) Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 3 A
VGE = 15 V IC = 1 A
1.2
1
1.5
V
V
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs
VCE =25 V
IC = 3 A
1.7
2.5
S
Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25 V f = 1 MHz VGE = 0
255
30
5.6
pF
pF
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V IC = 3 A
VGE = 15 V
18
5.4
5.5
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V RG=1kΩ
12
A
Tj = 150 oC
SWITCHING ON
Symbol
Parameter
Delay Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VCC = 480 V
IC = 3 A
170
540
ns
ns
VGE= 15 V
RG = 1kΩ
(di/dt)on Turn-on Current Slope VCC = 480 V
IC = 3 A
30
A/ s
µ
RG = 1kΩ
Tj = 125 C
VGE = 15 V
o
Eon
Turn-on Switching
Losses
300
J
µ
2/8
STGD3NB60S
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
VCC = 480 V
Min.
Typ.
Max.
Unit
tc
Cross-Over Time
Off Voltage Rise Time RGE = 1 k
IC = 3 A
1.8
1.0
µs
s
µ
tr(voff
)
VGE = 15 V
Ω
td(off)
tf
Delay Time
Fall Time
3.4
0.72
µs
s
µ
Eoff(**)
Turn-off Switching Loss
1.15
mJ
tc
tr(voff
td(off)
tf
Cross-Over Time
Off Voltage Rise Time RGE = 10 Ω
Delay Time
Fall Time
VCC = 480 V
Tj = 125 oC
IC = 3 A
VGE = 15 V
2.8
1.45
3.6
s
µ
µs
)
s
µ
1.2
s
µ
Eoff(**)
Turn-off Switching Loss
1.8
mJ
(•) Pulse width limited by max. junction temperature
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGD3NB60S
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGD3NB60S
Normalized Breakdown Voltage vs Temperature
CapacitanceVariations
Gate Charge vs Gate-EmitterVoltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/8
STGD3NB60S
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For InductiveLoad Switching
Fig. 3: Switching Waveforms
6/8
STGD3NB60S
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL ”A”
D
L2
DETAIL ”A”
L4
0068772-B
7/8
STGD3NB60S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
8/8
相关型号：
©2020 ICPDF网 联系我们和版权申明