STGD3NB60SD [STMICROELECTRONICS]
N-CHANNEL 3A - 600V DPAK Power MESH IGBT; N沟道3A - 600V电源DPAK IGBT MESH
| 型号： | STGD3NB60SD |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 3A - 600V DPAK Power MESH IGBT |
| 文件： | 总8页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGD3NB60SD
®
N-CHANNEL 3A - 600V DPAK
Power MESH IGBT
PRELIMINARY DATA
TYPE
STGD3NB60SD
VCES
VCE(sat)
IC
600 V
< 1.5 V
3 A
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
■
■
■
■
■
VERY LOW ON-VOLTAGE DROP (Vcesat
HIGH CURRENT CAPABILITY
)
OFF LOSSES INCLUDE TAIL CURRENT
INTEGRATED FREEWHEELING DIODE
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
3
1
DPAK
TO-252
(Suffix "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
GAS DISCHARGE LAMP
STATIC RELAYS
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VGE
Parameter
Value
Unit
V
Collector-Emitter Voltage (VGS = 0)
Gate-Emitter Voltage
600
± 20
V
o
IC
Collector Current (continuous) at Tc = 25 C
6
A
o
IC
Collector Current (continuous) at Tc = 100 C
3
25
A
ICM(•)
Ptot
Collector Current (pulsed)
A
o
Total Dissipation at Tc = 25 C
48
W
Derating Factor
0.32
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 175
175
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/8
March 2000
STGD3NB60SD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Max
Typ
3.125
100
1.5
oC/W
oC/W
oC/W
(Tj = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
Parameter
Test Conditions
IC = 250 µA VGE = 0
Min.
Typ.
Max.
Unit
VBR(CES) Collector-Emitter
Breakdown Voltage
600
V
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating
VCE = Max Rating
Tj = 25 oC
Tj = 125 oC
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V
VCE = 0
± 100
nA
ON (
)
Symbol
Parameter
Test Conditions
VCE = VGE IC = 250 µA
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold
Voltage
2.5
5
V
VCE(SAT) Collector-Emitter
Saturation Voltage
VGE = 15 V
VGE = 15 V
VGE = 15 V
IC = 1.5 A
IC = 3 A
IC = 3 A
1
1.2
1.1
V
V
V
1.5
Tj = 125 oC
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs
VCE =25 V
IC = 3 A
1.7
2.5
S
Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE = 25 V f = 1 MHz VGE = 0
255
30
5.6
330
40
7
pF
pF
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V IC = 3 A
VGE = 15 V
18
5.4
5.5
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V RG=1kΩ
Tj = 150 C
12
A
o
SWITCHING ON
Symbol
Parameter
Test Conditions
VCC = 480 V
GE= 15 V
(di/dt)on Turn-on Current Slope VCC = 480 V
G = 1kΩ
Min.
Typ.
Max.
Unit
td(on)
tr
Delay Time
Rise Time
IC = 3 A
RG = 1kΩ
125
150
ns
ns
V
IC = 3 A
VGE = 15 V
50
A/µs
R
o
Eon
Turn-on Switching
Losses
Tj = 125 C
1100
µJ
2/8
STGD3NB60SD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
CC = 480 V
Min.
Typ.
Max.
Unit
tc
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
R
IC = 3 A
1.8
1.0
3.4
0.72
1.15
µs
µs
µs
µs
mJ
tr(voff
)
GE = 1 kΩ
VGE = 15 V
td(off
tf
)
Eoff(**)
tc
tr(voff
td(off
tf
Eoff(**)
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
R
CC = 480 V
IC = 3 A
VGE = 15 V
2.8
1.45
3.6
1.2
1.8
µs
µs
µs
µs
mJ
)
)
GE = 1kΩ
o
Tj = 125 C
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Forward Current
Test Conditions
Min.
Typ. Max. Unit
If
Ifm
3
A
A
Forward Current pulsed
25
Vf
Forward On-Voltage
If = 3 A
If = 1 A
1.55
1.15
1.9
V
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A
dI/dt = 100 A/µS
VR=200 V
Tj = 125 C
1700
4500
9.5
ns
nC
A
o
(•) Pulse width limited by max. junction temperature
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGD3NB60SD
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGD3NB60SD
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Off Switching Losses vs Tj
Capacitance Variations
Off Switching Losses vs Ic
Switching Off Safe Operatin Area
5/8
STGD3NB60SD
Diode Forward vs Tj
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
6/8
STGD3NB60SD
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL "A"
D
L2
DETAIL "A"
L4
0068772-B
7/8
STGD3NB60SD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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