AP10G01 [ETC]
10mm SMT 14dB Active GPS Patch Antenna With Front End Saw Filter; 10毫米SMT 14分贝有源GPS贴片天线前端SAW滤波器
| 型号： | AP10G01 |
| 厂家： | 
ETC |
| 描述： | 10mm SMT 14dB Active GPS Patch Antenna With Front End Saw Filter |
| 文件： | 总11页 (文件大小：1572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP.10G.01
Specification
Part No.
AP.10G.01
10mm SMT 14dB Active GPS Patch Antenna
With Front End Saw Filter
Product Name
Unique SMT GPS active patch
Wide Input Voltage 1.5V to 3.3V
Ultra low power consumption
RoHS compliant
Feature
SPE-11-8-100/D/SS
|
page 1 of 11
1. Introduction
The AP.10G.01 one stage 14dB
A patented SMT structure gives high
reliability in integration. With an ultra low
power consumption one stage LNA with
Saw Filter, this small active patch has the
performance of an ordinary active patch,
but at only a quarter of the size.
Smartphones, Personal Location, Medical
devices, Telematic devices and
Automotive navigation and tracking.
Custom gain, connector and cable
versions are available.
active GPS patch antenna is the smallest
SMT GPS high performance embedded
antenna currently available in the world.
Using extremely sensitive high dielectric
constant powder formulation and tight
process control the 10mm x 10mm x 4mm
patch antenna is accurately tuned to have
its frequency band right at 1575.42MHz for
GPS systems.
The AP.10G consists of 2 functional blocks
– the LNA and also the patch antenna.
This product is suited to small form
factor mobile devices such as GPS
ANTENNA
LNA
SAW Filter
SPE-11-8-100/D/SS
|
page 2 of 11
2. Specification
2.1 Patch Antenna
Parameter
Frequency
Gain
Specification
1575.42 ± 1.023MHz
Typ -10dBic @ Zenith
50Ω
Impedance
Polarization
Axial Ratio
Dimension
RHCP
Max 4.0dB @ Zenith
10mm x 10mm x 4mm (add 7.3mm depth for vertical PCB)
2.2 LNA
Parameter
Specification
1575.42 ± 1.023MHz
F0=1575.42MHz
Frequency
Outer Band Attenuation
F0±30MHz 9dB min.
F0±50MHz 14dB min.
F0±100MHz 18dB min.
50Ω
Output Impedance
2.0 Max
Output VSWR
Typ. 1dBm
Pout at 1dB Gain
Compression point
LNA Gain, Power Consumption and Noise Figure
Voltage
LNA Gain (Typ)
18dB
Power Consumption(mA) Typ
Noise Figure Typ
2.6dB
Min. 1.5V
Typ. 1.8V
Max. 3.3V
3.5mA
3.5mA
3.5mA
18dB
2.6dB
18dB
2.6dB
2.3 Connection
SMT via solder pads
Connection
SPE-11-8-100/D/SS
|
page 3 of 11
3. LNA Gain and Out Band Rejection @3.0V
Tr1 S21 Log Mag 10.00dB/ Ref -40.00dB (F2 Smo)
30.00
>1 1.5754200 GHz 18.276 dB
1
20.00
10.00
3
0.000
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
5
7
1
6
4
2
1 Center 1.57542 GHz
IFBW 1 kHz
Span 400 MHz Cor
Cg1 Tr1 S21
Cg1 Tr1 S21
Cg1 Tr1 S21
Cg1 Tr1 S21
Cg1 Tr1 S21
Cg1 Tr1 S21
Cg1 Tr1 S21
>1
2
1.5754200 GHz
1.6054200 GHz
1.5454200 GHz
1.6254200 GHz
1.5254200 GHz
1.6754200 GHz
1.4754200 GHz
18.276
dB
-15.173 dB
6.6195 dB
-12.083 dB
2.2267 dB
- 5.9624 dB
- 0.5270 dB
3
4
5
6
7
SPE-11-8-100/D/SS
|
page 4 of 11
4. LNA Noise Figure @3.0V
Mkr1
1.5754 GHz
2.569 dB
18.100 dB
9.000
NFIG
Scale/
1.000
dB
1
-1.000
40.00
1
GAIN
Scale/
5.000
dB
-10.00
Center 1.57542 GHz BW 4 MHz
Tcold 296.50 K Avgs Off
Points 11
Att 0/ - - dB
Span 3.00 MHz
Loss Off
Corr
5. Total Specification (through Antenna, LNA)
Parameter
Specification
1575.42 ± 1.023MHz
8 ± 4dBic @ 90°
50Ω
Frequency
Gain
Output Impedance
Polarization
RHCP
Max 2.0
Output VSWR
Operation Temperature
Storage Temperature
Relative Humidity
Input Voltage
-40°C to + 85°C
-40°C to + 85°C
40% to 95%
Min. 1.5V, Typ. 1.8V, Max. 3.3V
SPE-11-8-100/D/SS
|
page 5 of 11
6. Radiation Patterns
6.1 XZ Plane
0
-8
-10
-15
-20
-25
-30
-35
-40
90
270
180
Pattern Model No. Test Mode Freq (MHz) Max Gain(dBi) Min Gain(dBi) Avg. Gain(dBi) Source Polar.
Date
1
AP.10G
XZ
1620.00
-9.20 / 42.00 -11.99 / 147.00
-10.24
RHCP
2010/4/25
SPE-11-8-100/D/SS
|
page 6 of 11
6.2 YZ Plane
0
-8
-10
-15
-20
-25
-30
-35
-40
90
270
180
Pattern Model No. Test Mode Freq (MHz) Max Gain(dBi) Min Gain(dBi) Avg. Gain(dBi) Source Polar.
Date
1
AP.10G
YZ
1620.00 -9.73 / 324.00 -19.18 / 222.00
-12.80
RHCP
2010/4/25
SPE-11-8-100/D/SS
|
page 7 of 11
6.3 XY Plane
0
-8
-10
-15
-20
-25
-30
-35
-40
90
270
180
Pattern Model No. Test Mode Freq (MHz) Max Gain(dBi) Min Gain(dBi) Avg. Gain(dBi) Source Polar.
Date
1
2
AP.10G
AP.10G
XZ
YZ
1620.00
-9.20 / 42.00 -11.99 / 147.00
-10.24
-12.80
RHCP
RHCP
2010/4/25
2010/4/25
1620.00 -9.73 / 324.00 -19.18 / 222.00
SPE-11-8-100/D/SS
|
page 8 of 11
7. Technical Drawing
C
G3 Amend drawing content
Sandy
2011/11/16
Top View
B
Side View
Bottom View
PCB Footprint
Name
Material
Finish
QTY
1
2
3
Patch (10mm x 10mm x 4.2mm) Ceramic
Clear
1
Shielding Case
PCB
Tin (SPTE)
FR4 0.6t
Tin Plated
Green
1
1
NOTE:
1. Soldered area
2. Solder Mask Area (Green)
3. Clearance Area
4. Shielding Case Area
5. Area to be solder (Pad)
SPE-11-8-100/D/SS
|
page 9 of 11
7.1 PCB Footprint
PCB Footprint
PCB Thickness 0.8mm
Application Assembly
Front
Back
Side
Ground
Name:
1. Soldered Area
2. Solder Mask Area (Green)
3. Clearance Area
4. Shielding Case Area
5. Area to be solder (Pad)
SPE-11-8-100/D/SS
| page 10 of 11
8. Packaging
Packaged on Tape and Reel
250 pieces per reel
Inner Carton
Each Reel is packaged
Outer Carton contains 5 Reels
1250 pieces per Carton
Taoglas makes no warranties based on the
accuracy or completeness of the contents
of this document and reserves the right to
make changes to specifications and
product descriptions at any time
without notice.
contained herein. Reproduction, use or
disclosure to third parties without
express permission is strictly prohibited.
Copyright © 2012, Taoglas Ltd.
Taoglas reserves all rights to this document
and the information
SPE-11-8-100/D/SS
| page 11 of 11
相关型号：
AP10N70P
TRANSISTOR 10 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power
A-POWER
AP10N70R-A
TRANSISTOR 10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN, FET General Purpose Power
A-POWER
©2020 ICPDF网 联系我们和版权申明