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AP10N60W [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP10N60W
型号： AP10N60W
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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AP10N60W  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ 100% Avalanche Test  
BVDSS  
RDS(ON)  
ID  
600V  
0.75Ω  
10A  
D
S
▼ Fast Switching Characteristic  
▼ Simple Drive Requirement  
G
Description  
AP10N60 series are specially designed as main switching devices for  
universal 90~265VAC off-line AC/DC converter applications. The  
TO-3P type provide high blocking voltage to overcome voltage surge  
and sag in the toughest power system with the best combination of fast  
switching,ruggedized design and cost-effectiveness.  
The TO-3P package is widely preferred for commercial-industrial  
applications. The device is suited for switch mode power supplies,  
DC-AC converters and high current high speed switching circuits.  
G
D
TO-3P  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
600  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
± 30  
V
ID@TC=25℃  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
10  
A
ID@TC=100℃  
5.8  
A
IDM  
36  
A
PD@TC=25℃  
Total Power Dissipation  
Single Pulse Avalanche Energy2  
156  
W
mJ  
A
EAS  
IAR  
50  
Avalanche Current  
10  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
℃
℃
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
0.8  
40  
Rthj-a  
Data & specifications subject to change without notice  
1
200803181  
AP10N60W  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance3 VGS=10V, ID=4A  
VGS=0V, ID=1mA  
600  
-
-
-
-
0.75  
4
V
Ω
V
-
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
2
gfs  
Forward Transconductance  
VDS=10V, ID=4A  
VDS=480V, VGS=0V  
VDS=480V, VGS=0V  
VGS=±30V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3.8  
-
-
S
IDSS  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=150oC)  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
25  
-
250  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge3  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time3  
Rise Time  
-
±100  
ID=8A  
45  
11  
15  
16  
9
72  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=480V  
VGS=10V  
-
VDD=300V  
-
ID=4A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=10Ω,VGS=4.7V  
RD=75Ω  
48  
11  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
2380 3800  
VDS=15V  
475  
4.3  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage3  
Reverse Recovery Time3  
Tj=25℃, IS=8A, VGS=0V  
IS=8A, VGS=0V,  
-
-
-
-
1.5  
V
550  
9.2  
-
-
ns  
uC  
Qrr  
Reverse Recovery Charge  
dI/dt=100A/µs  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.  
3.Pulse test  
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT  
DEVICE OR SYSTEM ARE NOT AUTHORIZED.  
2
AP10N60W  
20  
16  
12  
8
10  
T C =25 o C  
10V  
6.0V  
5.0V  
T C =150 o C  
10V  
6.0V  
8
V
G = 4. 5 V  
6
4
5.0V  
2
4
V G =4.5V  
0
0
0
4
8
12  
16  
20  
0
5
10  
15  
20  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.3  
2.8  
2.4  
2
I D =4A  
V
G =10V  
1.2  
1.1  
1
1.6  
1.2  
0.8  
0.9  
0.8  
25  
50  
75  
100  
125  
150  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C )  
T j , Junction Temperature ( o C)  
Fig 3. Normalized BVDSS v.s. Junction  
Temperature  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
1.4  
1.2  
1
T j = 150 o  
C
T j = 25 o  
C
1
0.8  
0.6  
0.4  
0.1  
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP10N60W  
f=1.0MHz  
C iss  
10000  
100  
1
16  
12  
I D =8A  
DS =480V  
V
C oss  
8
4
C rss  
0
0
20  
40  
60  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
10  
1
1
Duty factor=0.5  
0.2  
0.1  
100us  
0.1  
1ms  
0.05  
PDM  
t
10ms  
100ms  
DC  
0.02  
T
0.01  
T c =25 o C  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
0.01  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGD  
QGS  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-3P  
E
A
Millimeters  
SYMBOLS  
MIN NOM MAX  
φ
A
b
4.50  
0.90  
1.80  
1.30  
0.40  
1.40  
4.80  
1.00  
2.50  
--  
5.10  
1.30  
3.20  
2.30  
0.90  
2.20  
b1  
b2  
c
c1  
D
0.60  
--  
D1  
c1  
D
D1  
E
19.70 20.00 20.30  
14.70 15.00 15.30  
15.30  
4.45  
--  
5.45  
--  
16.10  
6.45  
b1  
b2  
e
L
17.50  
3.00  
20.50  
3.40  
φ
3.20  
L
c
1.All Dimensions Are in Millimeters.  
b
2.Dimension Does Not Include Mold Protrusions.  
e
Part Marking Information & Packing : TO-3P  
Part Number  
Package  
10N60W  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5

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