AP10N70W [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP10N70W |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总5页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP10N70W
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
RDS(ON)
ID
600V
0.6Ω
10A
D
S
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. The TO-3P type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,
ruggedized design and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial applications.
The device is suited for switch mode power supplies ,DC-AC converters
and high current high speed switching circuits.
G
D
TO-3P
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
± 30
V
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
10
A
6.3
A
40
A
PD@TC=25℃
Total Power Dissipation
174
W
Linear Derating Factor
Single Pulse Avalanche Energy2
1.39
W/℃
mJ
A
EAS
IAR
50
Avalanche Current
10
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Value
Unit
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
0.72
40
Rthj-a
Data & specifications subject to change without notice
201022072-1/4
AP10N70W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
VGS=0V, ID=1.0mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
600
-
-
-
-
0.6
4
V
Ω
V
VGS=10V, ID=5.0A
VDS=VGS, ID=250uA
-
2
gfs
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
VDS=10V, ID=5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
100
IGSS
-
±100
Qg
ID=10A
36
8.3
11.5
15
20
52
23
57
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
VDS=480V
VGS=10V
-
VDD=300V
-
ID=10A
-
td(off)
tf
Turn-off Delay Time
RG=10Ω,VGS=10V
RD=30Ω
-
Fall Time
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
1950 3120
Output Capacitance
VDS=15V
630
20
2
-
-
Reverse Transfer Capacitance
Gate Resistance
f=1.0MHz
f=1.0MHz
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage3
Reverse Recovery Time3
Tj=25℃, IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.5
V
575
10.6
-
-
ns
uC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP10N70W
20
16
12
8
16
12
8
10V
6.0V
5.0V
T C =25 o C
T C =150 o C
10V
6.0V
5.0V
4.5V
V
G = 4.0V
4
4.5V
4
V
G =4.0V
0
0
0
10
20
30
40
0
5
10
15
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.2
2.8
2.4
2
1.3
1.2
1.1
1
I D =5A
V
G =10V
1.6
1.2
0.8
0.9
0.8
25
50
75
100
125
150
-50
0
50
100
150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
1.2
1
T j = 150 o
C
T j = 25 o
C
1
0.8
0.6
0.4
0.1
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP10N70W
f=1.0MHz
C iss
10000
100
1
16
I D =10A
V
DS =320V
DS =400V
DS =480V
12
V
V
C oss
8
4
C rss
0
0
20
40
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
0.2
0.1
100us
1ms
0.1
0.05
PDM
10ms
t
0.02
T
T c =25 o C
100ms
0.01
Duty factor = t/T
Single Pulse
1S
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-3P
E
A
Millimeters
SYMBOLS
MIN NOM MAX
φ
A
b
4.50
0.90
1.80
1.30
0.40
1.40
4.80
1.00
2.50
--
5.10
1.30
3.20
2.30
0.90
2.20
b1
b2
c
c1
D
0.60
--
D1
c1
D
D1
E
19.70 20.00 20.30
14.70 15.00 15.30
15.30
4.45
--
5.45
--
16.10
6.45
b1
b2
e
L
17.50
3.00
20.50
3.40
φ
3.20
L
c
1.All Dimensions Are in Millimeters.
b
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-3P
Part Number
Package
10N70W
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
相关型号：
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